CYStech Electronics Corp. Spec. No. : C118I3 Issued Date : 2015.12.26 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN3N60CI3 BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=1.5A 600V 3A 3Ω(typ) Features • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Symbol Outline MTN3N60CI3 TO-251 G：Gate D：Drain S：Source G D S Ordering Information Device MTN3N60CI3-0-UA-G Package TO-251 (RoHS compliant and halogen-free package) Shipping 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA : 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name MTN3N60CI3 CYStek Product Specification Spec. No. : C118I3 Issued Date : 2015.12.26 Revised Date : Page No. : 2/10 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V Continuous Drain Current @TC=100°C, VGS=10V Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Single Pulse Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TA=25℃) Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature VDS VGS IDM EAS IAS EAR 600 ±30 3 1.9 12 22.5 3 3.3 mJ A mJ TL 300 °C ID Unit V A 1.14 50 0.4 -55~+150 PD Tj, Tstg W W/°C °C Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=3A, VDD=50V, L=5mH, VGS=10V, starting TJ=+25℃. 100% tested by conditions of L=1mH, IAS=3A, VGS=10V, VDD=50V. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 2.5 110 Unit °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf MTN3N60CI3 Min. Typ. Max. Unit Test Conditions 600 2 - 0.7 3 3 4 ±100 1 10 3.7 V V/°C V S nA Ω VGS=0V, ID=250μA, Tj=25℃ Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =15V, ID=1.5A VGS=±30V VDS =600V, VGS =0V VDS =480V, VGS =0V, Tj=125°C VGS =10V, ID=1.5A - 11.6 2.2 4.9 7.8 8.6 21.4 10.6 - nC ID=3A, VDD=480V, VGS=10V ns VDS=300V, ID=3A, VGS=10V, RG=25Ω μA CYStek Product Specification CYStech Electronics Corp. Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr - 332 44 15 3.3 - 0.84 345 1.2 3 12 1.5 - Spec. No. : C118I3 Issued Date : 2015.12.26 Revised Date : Page No. : 3/10 pF VGS=0V, VDS=25V, f=1MHz Ω f=1MHz A V ns μC IS=3A, VGS=0V VGS=0V, IF=3A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTN3N60CI3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C118I3 Issued Date : 2015.12.26 Revised Date : Page No. : 4/10 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 5 ID, Drain Current(A) 4 3 BVDSS, Normalized Drain-Source Breakdown Voltage 1.4 10V 9V 8V 7V 6V 5.5V 5V 2 1 4.5V VGS=4V 10 20 30 VDS, Drain-Source Voltage(V) 1.0 0.8 ID=250μA, VGS=0V 0.6 0 0 1.2 40 -75 50 -50 -25 Drain Current vs Gate-Source Voltage Static Drain-Source On-State resistance vs Drain Current 6 VGS=10V 4 Ta=25°C 5 ID, Drain Current(A) R DS(ON) , Static Drain-Source OnState Resistance(Ω) 5 3 2 1 VDS=30V 4 3 VDS=10V 2 1 0 0 0.01 0.1 1 ID, Drain Current(A) 0 10 2 100 5 10 IF, Forward Current(A) 6 4 3 2 10 VGS=0V 1 Ta=150°C Ta=25°C 0.1 0.01 ID=1.5A 1 4 6 8 VGS, Gate-Source Voltage(V) Forward Drain Current vs Source-Drain Voltage Static Drain-Source On-State Resistance vs Gate-Source Voltage RDS(ON), Static Drain-Source On-State Resistance(Ω) 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) Ta=25°C 0.001 0 0 2 4 6 VGS, Gate-Source Voltage(V) MTN3N60CI3 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, Source Drain Voltage(V) CYStek Product Specification Spec. No. : C118I3 Issued Date : 2015.12.26 Revised Date : Page No. : 5/10 CYStech Electronics Corp. Typical Characteristics(Cont.) Capacitance vs Reverse Voltage Static Drain-Source On-resistance vs Ambient Temperature 1000 3.0 100 RDS(ON), Normalized Static Drain-Source On-state Resistance Capacitance(pF) Ciss Coss 10 Crss f=1MHz 1 ID=1.5A, VGS=10V 2.5 2.0 1.5 1.0 0.5 RDSON@Tj=25°C : 3Ωtyp. 0.0 0 5 10 15 20 25 VDS, Drain-to-Source Voltage(V) 30 -75 -50 -25 Gate Charge Characteristics Maximum Safe Operating Area 100 10 10 μs RDS(ON) Limited 10 VDS=120V VGS, Gate-Source Voltage(V) ID, Drain Current(A) 100μs 1ms 10ms 1 100ms DC TC=25°C, Tj(max)=150°C VGS=10V, RθJC=2.5°C/W Single pulse 0.1 VDS=300V 8 6 VDS=480V 4 2 ID=3A 0 0.01 1 10 100 0 1000 4 6 8 10 Qg, Total Gate Charge(nC) Maximum Drain Current vs Case Temperature Threshold Voltage vs Junction Tempearture VGS(th), Normalized Threshold Voltage 3 2.5 2 1.5 1 0.5 2 VDS, Drain-Source Voltage(V) 3.5 ID, Maximum Drain Current(A) 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) VGS=10V, RθJC=2.5°C/W 12 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 0 25 50 75 100 125 TC, Case Temperature(°C) MTN3N60CI3 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C118I3 Issued Date : 2015.12.26 Revised Date : Page No. : 6/10 Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current Single Pulse Power Rating, Junction to Case GFS , Forward Transfer Admittance(S) 10 3000 2700 TJ(MAX) =150°C TC=25°C RθJC=2.5°C/W 2400 2100 Power (W) 1 0.1 VDS=15V 0.01 0.1 1 ID, Drain Current(A) 1500 1200 900 Ta=25°C Pulsed 0.01 0.001 1800 600 300 10 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.5 °C/W 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-04 MTN3N60CI3 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C118I3 Issued Date : 2015.12.26 Revised Date : Page No. : 7/10 Test Circuit and Waveforms MTN3N60CI3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C118I3 Issued Date : 2015.12.26 Revised Date : Page No. : 8/10 Test Circuit and Waveforms(Cont.) MTN3N60CI3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C118I3 Issued Date : 2015.12.26 Revised Date : Page No. : 9/10 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN3N60CI3 CYStek Product Specification Spec. No. : C118I3 Issued Date : 2015.12.26 Revised Date : Page No. : 10/10 CYStech Electronics Corp. TO-251 Dimension Marking: Product Name Date Code CYS 3N60C □□□□ 1 2 3 Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-251 Plastic Package CYStek Package Code: I3 Millimeters Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF 0.60 0.90 DIM A B C D E F Inches Min. Max. 0.252 0.268 0.205 0.217 0.268 0.283 0.283 0.307 0.091 REF 0.024 0.035 DIM G H J K L M Millimeters Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Inches Min. Max. 0.020 0.028 0.087 0.094 0.018 0.022 0.018 0.024 0.035 0.059 0.213 0.228 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN3N60CI3 CYStek Product Specification