JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT3904T TRANSISTOR (NPN) FEATURES Complementary to MMBT3906T Small Package SOT–523 MARKING:1N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector Power Dissipation 150 mW Thermal Resistance From Junction To Ambient 833 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V Collector cut-off current ICEX VCE=30V, VEB(off)=3V 50 nA Emitter cut-off current IEBO VEB=5V, IC=0 100 nA hFE(1) VCE=1V, IC=0.1mA 40 hFE(2) VCE=1V, IC=1mA 70 hFE(3) VCE=1V, IC=10mA 100 hFE(4) VCE=1V, IC=50mA 60 DC current gain Collector-emitter saturation voltage VCE(sat) Collector-emitter saturation voltage VBE(sat) Transition frequency fT 300 IC=10mA, IB=1mA 0.2 V IC=50mA, IB=5mA 0.3 V 0.85 V 0.95 V IC=10mA, IB=1mA 0.65 IC=50mA, IB=5mA VCE=20V,IC=10mA, f=100MHz 300 MHz Collector output capacitance Cob VCB=5V, IE=0, f=1MHz 4 pF Base input capacitance Cib VEB=0.5V, IC=0, f=1MHz 8 pF Delay time td 35 ns Rise time tr 35 ns Storage time ts VCC=3V, IC=10mA, IB1= IB2=1mA 200 ns Fall time tf VCC=3V, IC=10mA, IB1= IB2=1mA 50 ns www.cj-elec.com VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA 1 D,Mar,2016 A,Jun,2014 Typical Characteristics Static Characteristic 14 hFE 56uA 10 49uA 42uA 8 o Ta=100 C 250 DC CURRENT GAIN (mA) 63uA IC COLLECTOR CURRENT VCE= 1V COMMON EMITTER Ta=25℃ 70uA 12 hFE —— IC 300 35uA 6 28uA 21uA 4 14uA 200 150 o Ta=25 C 100 50 2 IB=7uA 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 COLLECTOR-EMITTER VOLTAGE VCE 3.5 0 0.1 4.0 VBEsat —— IC 1.0 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25℃ 0.6 Ta=100℃ 0.4 10 VCEsat —— 400 β=10 0.8 1 COLLECTOR CURRENT (V) IC 100 (mA) 200 IC β=10 300 200 Ta=100℃ 100 Ta=25℃ 0.2 0.1 0 1 10 COLLECTOR CURRENT 100 IC 1 200 IC—— VBE COLLECTOR POWER DISSIPATION Pc (mW) IC (mA) o Ta=100 C COLLECTOR CURRENT Pc 200 100 10 Ta=25℃ 1 —— IC 200 (mA) Ta 175 150 125 100 75 50 25 VCE=1V 0 0.4 0.5 0.6 0.7 BASE-EMITTER VOLTAGE www.cj-elec.com 100 COLLECTOR CURRENT 200 0.1 0.3 10 (mA) 0.8 0.9 1.0 0 25 50 75 AMBIENT TEMPERATURE VBE(V) 2 100 Ta 125 150 (℃ ) D,Mar,2016 A,Jun,2014 SOT-523 Package Outline Dimensions Symbol A A1 A2 b1 b2 c D E E1 e e1 L L1 θ Dimensions In Millimeters Max. Min. 0.700 0.900 0.000 0.100 0.700 0.800 0.150 0.250 0.250 0.350 0.100 0.200 1.500 1.700 0.700 0.900 1.450 1.750 0.500 TYP. 0.900 1.100 0.400 REF. 0.260 0.460 0° 8° Dimensions In Inches Min. Max. 0.028 0.035 0.000 0.004 0.028 0.031 0.006 0.010 0.010 0.014 0.004 0.008 0.059 0.067 0.028 0.035 0.057 0.069 0.020 TYP. 0.035 0.043 0.016 REF. 0.010 0.018 0° 8° SOT-523 Suggested Pad Layout www.cj-elec.com 3 D,Mar,2016 A,Jun,2014 SOT-523 Tape and Reel www.cj-elec.com 4 D,Mar,2016 A,Jun,2014