INCHANGE Semiconductor isc Silicon NPN Power Transistor BD333 DESCRIPTION ·High DC Current Gain ·Complement to type BD334 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A IBM Base Current-Peak 0.15 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.08 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor BD333 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA 2.0 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 3V 2.5 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 VCB= 60V; IE= 0,TC=150℃ 0.1 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA hFE-1* DC Current Gain IC= 0.5A; VCE= 3V hFE-2* DC Current Gain IC= 3A; VCE=3V hFE-3* DC Current Gain IC= 6A; VCE= 3V 80 UNIT V 1900 750 3000 *:Measured under pulse conditions:tp<300us,σ<2% isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark