PD - 94361
IRFP4710
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Motor Control
l Uninterruptible Power Supplies
VDSS
100V
RDS(on) max
ID
0.014Ω
72A
Benefits
Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
l
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
Units
72
51
300
190
1.2
± 20
8.2
-55 to + 175
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Notes
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
through
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Typ.
Max.
Units
–––
0.24
–––
0.81
–––
40
°C/W
are on page 8
1
01/08/02
IRFP4710
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
100
–––
–––
3.5
–––
–––
–––
–––
Typ.
–––
0.11
0.011
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, I D = 1mA
0.014
Ω
VGS = 10V, ID = 45A
5.5
V
VDS = VGS, ID = 250µA
1.0
VDS = 95V, VGS = 0V
µA
250
VDS = 80V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
110
43
40
35
130
41
38
6160
440
250
1580
280
430
Max. Units
Conditions
–––
S
VDS = 50V, ID = 45A
170
ID = 45A
–––
nC
VDS = 50V
–––
VGS = 10V,
–––
VDD = 50V
–––
ID = 45A
ns
–––
RG = 4.5Ω
–––
VGS = 10V
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 80V
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
190
45
20
mJ
A
mJ
Diode Characteristics
IS
ISM
VSD
trr
Qrr
ton
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
72
––– –––
showing the
A
G
integral reverse
––– ––– 300
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 45A, VGS = 0V
––– 74 110
ns
TJ = 25°C, IF = 45A
––– 180 260
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFP4710
1000
1000
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
100
100
10
1
6.0V
0.1
20µs PULSE WIDTH
T = 25 C
°
J
0.01
0.1
1
10
100
10
TJ = 25 ° C
1
V DS = 50V
20µs PULSE WIDTH
10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 175 ° C
9.0
1
10
100
Fig 2. Typical Output Characteristics
3.0
8.0
°
J
VDS , Drain-to-Source Voltage (V)
1000
7.0
20µs PULSE WIDTH
T = 175 C
1
0.1
Fig 1. Typical Output Characteristics
0.1
6.0
6.0V
10
VDS , Drain-to-Source Voltage (V)
100
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
ID = 75A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFP4710
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
8000
Coss = Cds + Cgd
Ciss
6000
4000
2000
Coss
VGS , Gate-to-Source Voltage (V)
20
10000
ID = 45A
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
0
1
10
0
100
40
1000
ID , Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
100
TJ = 175 ° C
10
TJ = 25 ° C
0.1
0.0
V GS = 0 V
0.4
0.8
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
120
160
200
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1
80
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
4
VDS = 80V
VDS = 50V
VDS = 20V
1.6
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
100µsec
10
1msec
1
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFP4710
80
VGS
D.U.T.
RG
60
I D , Drain Current (A)
RD
VDS
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS
90%
0
25
50
75
100
125
TC , Case Temperature
150
175
( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJC )
10
1
Thermal Response
D = 0.50
0.20
P DM
0.1
0.10
t1
0.05
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
t1 / t 2
J = P DM x Z thJC
+T C
0.1
1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP4710
D R IV E R
L
VD S
D .U .T
RG
+
- VD D
IA S
2V0GS
V
tp
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
EAS , Single Pulse Avalanche Energy (mJ)
350
1 5V
TOP
300
BOTTOM
250
ID
18A
32A
45A
200
150
100
50
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
10 V
50KΩ
12V
.2µF
.3µF
QGS
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFP4710
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFP4710
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
-D -
3.6 5 (.14 3)
3.5 5 (.14 0)
1 5.9 0 (.6 26 )
1 5.3 0 (.6 02 )
-B -
0.2 5 (.0 10 ) M
D B M
-A 5 .50 (.21 7)
2 0 .30 (.80 0)
1 9 .70 (.77 5)
2X
1
2
5 .30 (.20 9)
4 .70 (.18 5)
2 .50 (.0 89 )
1 .50 (.0 59 )
4
NO TE S:
5.50 (.2 1 7)
4.50 (.1 7 7)
1 DIM EN SION ING & TO LER AN CING
P ER A N SI Y14.5M , 1982.
2 CON TR OLLIN G D IM EN SIO N : IN CH .
3 CON F OR M S TO JED E C OU TLIN E
TO-247-A C .
3
-C -
14.8 0 (.5 83 )
14.2 0 (.5 59 )
2 .40 (.0 94 )
2 .00 (.0 79 )
2X
5.45 (.2 1 5)
2X
4 .30 (.1 70 )
3 .70 (.1 45 )
0 .8 0 (.0 31 )
3X 0 .4 0 (.0 16 )
1 .4 0 (.0 56 )
3 X 1 .0 0 (.0 39 )
0.2 5 (.01 0) M
3 .40 (.1 33 )
3 .00 (.1 18 )
C A S
2.60 (.10 2)
2.20 (.08 7)
LE AD A S SIG N ME NTS
1
2
3
4
-
G ATE
DR A IN
SO UR C E
DR A IN
TO-247AC Part Marking Information
EXAMPLE:
THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
IRFPE30
56
035H
57
ASSEMBLY
LOT CODE
DATE CODE
YEAR 0 = 2000
WEEK 35
LINE H
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 190µH
RG = 25Ω, I AS = 45A, VGS = 10V.
ISD ≤ 45A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C .
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging
time as Coss while VDS is rising from 0 to 80% VDSS .
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/02
8
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