JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FMMBD4448HADW WBFBP-06C SURFACE MOUNT SWITCHING DIODE ARRAYS (2×2×0.5) unit: mm DESCRIPTION Silicon epitaxial planar Switching Diode FEATURES z Ultra-Small Surface Mount Package z Fast Switching Speed z High Conductance 1 APPLICATION For General Purpose Switching Applications, rectifiers For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) FMMBD4448HADW Marking:KA6 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 Parameter Non-Repetitive Peak reverse voltage Symbol Limits Unit VRM 100 V Peak Repetitive peak reverse voltage VRRM Working Peak Reverse Voltage VRWM 80 V DC Blocking VR Voltage VR(RMS) 57 V Forward Continuous Current IFM 500 mA Average Rectified Output Current IO 250 mA RMS Reverse Voltage Non-Repetitive Peak forward surge current @=1.0µs 4.0 IFSM @=1.0s Pd Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature range A 2.0 150 mW RθJA 625 ℃/W TJ 150 ℃ TSTG -65 to +150 ℃ Electrical Ratings @TA=25℃ Parameter Unit Conditions V IR=100μA 0.72 V IF=5mA VF2 0.855 V IF=10mA VF3 1.0 V IF=100mA VF4 1.25 V IF=150mA IR1 0.1 µA VR=70V IR2 25 nA VR=20V Capacitance between terminals CT 3.5 pF VR=6V,f=1MHz Reverse Recovery Time trr 4 ns VR=6V,IF=5mA Reverse Breakdown Voltage Forward voltage Reverse current Symbol Min. VR 80 VF1 0.62 Typ. Max. Typical Characteristics Symbol A A1 b D E D1 E1 e L k z Dimensions In Millimeters Min. Max. 0.450 0.550 0.000 0.100 0.150 0.250 1.900 2.100 1.900 2.100 0.420 REF. 0.420 REF. 0.650 TYP. 0.650 REF. 0.350 REF. 0.500 REF. Dimensions In Inches Min. Max. 0.018 0.022 0.000 0.004 0.006 0.010 0.075 0.083 0.075 0.083 0.017 REF. 0.017 REF. 0.026 TYP. 0.026 REF. 0.014 REF. 0.020 REF. APPLICATION CIRCUITS Bridge rectifiers