ON NLVAS4599DTT1G Low voltage single supply spdt analog switch Datasheet

NLAS4599
Low Voltage Single Supply
SPDT Analog Switch
The NLAS4599 is an advanced high speed CMOS single pole −
double throw analog switch fabricated with silicon gate CMOS
technology. It achieves high speed propagation delays and low ON
resistances while maintaining low power dissipation. This switch
controls analog and digital voltages that may vary across the full
power−supply range (from VCC to GND).
The device has been designed so the ON resistance (RON) is much
lower and more linear over input voltage than RON of typical CMOS
analog switches.
The channel select input is compatible with standard CMOS outputs.
The channel select input structure provides protection when
voltages between 0 V and 5.5 V are applied, regardless of the supply
voltage. This input structure helps prevent device destruction caused
by supply voltage − input/output voltage mismatch, battery backup,
hot insertion, etc.
•
•
•
•
•
•
•
•
•
•
Channel Select Input Over−Voltage Tolerant to 5.5 V
Fast Switching and Propagation Speeds
Break−Before−Make Circuitry
Low Power Dissipation: ICC = 2 A (Max) at TA = 25°C
Diode Protection Provided on Channel Select Input
Improved Linearity and Lower ON Resistance over Input Voltage
Latch−up Performance Exceeds 300 mA
ESD Performance: Human Body Model > 2000 V;
Machine Model > 200 V
Chip Complexity: 38 FETs
Pb−Free Packages are Available
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MARKING
DIAGRAMS
TSOP−6
DT SUFFIX
CASE 318G
1
A0 MG
G
1
6
SC−88
DF SUFFIX
CASE 419B
1
A0 MG
G
1
A0 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
FUNCTION TABLE
1
6
NO
V+ 2
5
COM
GND 3
4
NC
SELECT
Select
ON Channel
L
H
NC
NO
Figure 1. Pin Assignment
NO
U
U
COM
2X0
2X1
U
CHANNEL SELECT
NC
Figure 2. Logic Symbol
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
March, 2011 − Rev. 11
1
Publication Order Number:
NLAS4599/D
NLAS4599
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
−0.5 to +7.0
V
−0.5 ≤ VIS ≤ VCC )0.5
V
−0.5 ≤ VI ≤ + 7.0
V
$50
mA
200
200
mW
−65 to +150
°C
Lead Temperature, 1mm from Case for 10 seconds
260
°C
TJ
Junction Temperature Under Bias
150
°C
VESD
ESD Withstand Voltage
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
2000
200
N/A
V
ILATCH−UP
Latch−Up Performance
Above VCC and Below GND at 125°C (Note 4)
$300
mA
JA
Thermal Resistance
333
333
°C/W
VCC
Positive DC Supply Voltage
VIS
Analog Input Voltage (VNO or VCOM)
VIN
Digital Select Input Voltage
IIK
DC Current, Into or Out of Any Pin
PD
Power Dissipation in Still Air
TSTG
Storage Temperature Range
TL
SC−88
TSOP−6
SC−88
TSOP−6
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
2.0
5.5
V
5.5
V
VCC
DC Supply Voltage
VIN
Digital Select Input Voltage
GND
VIS
Analog Input Voltage (NC, NO, COM)
GND
VCC
V
TA
Operating Temperature Range
−55
+125
°C
tr, tf
Input Rise or Fall Time,
SELECT
0
0
100
20
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
TJ = 80°C
80
TJ = 90°C
Time, Years
TJ = 100°C
Time, Hours
TJ = 110°C
Junction
Temperature 5C
ns/V
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
TJ = 120°C
DEVICE JUNCTION TEMPERATURE VERSUS TIME
TO 0.1% BOND FAILURES
TJ = 130°C
NORMALIZED FAILURE RATE
VCC = 3.3 V + 0.3 V
VCC = 5.0 V + 0.5 V
1
1
10
TIME, YEARS
100
1000
Figure 3. Failure Rate vs. Time Junction Temperature
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2
NLAS4599
DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Condition
VCC
−55 to 255C
<855C
<1255C
Unit
VIH
Minimum High−Level
Input Voltage, Select
Input
2.0
2.5
3.0
4.5
5.5
1.5
1.9
2.1
3.15
3.85
1.5
1.9
2.1
3.15
3.85
1.5
1.9
2.1
3.15
3.85
V
VIL
Maximum Low−Level
Input Voltage, Select
Input
2.0
2.5
3.0
4.5
5.5
0.5
0.6
0.9
1.35
1.65
0.5
0.6
0.9
1.35
1.65
0.5
0.6
0.9
1.35
1.65
V
IIN
Maximum Input Leakage
Current, Select Input
VIN = 5.5 V or GND
5.5
+0.1
+1.0
+1.0
A
IOFF
Power Off Leakage
Current
VIN = 5.5 V or GND
0
$10
$10
$10
A
ICC
Maximum Quiescent
Supply Current
Select and VIS = VCC or GND
5.5
1.0
1.0
2.0
A
DC ELECTRICAL CHARACTERISTICS − Analog Section
Guaranteed Limit
Symbol
Parameter
Condition
VCC
−55 to 255C
<855C
<1255C
Unit
RON
Maximum “ON”
Resistance
(Figures 17 − 23)
VIN = VIL or VIH
VIS = GND to VCC
IINI < 10.0 mA
2.5
3.0
4.5
5.5
85
45
30
25
95
50
35
30
105
55
40
35
RFLAT
ON Resistance Flatness
(Figures 17 − 23)
VIN = VIL or VIH
IINI < 10.0 mA
VIS = 1V, 2V, 3.5V
4.5
4
4
5
ON Resistance Match
Between Channels
VIN = VIL or VIH
IINI < 10.0 mA
VNO or VNC = 3.5 V
4.5
2
2
3
(ON)
INC(OFF)
INO(OFF)
NO or NC Off Leakage
Current (Figure 9)
VIN = VIL or VIH
VNO or VNC = 1.0 VCOM 4.5 V
5.5
1
10
100
nA
ICOM(ON
COM ON Leakage
Current (Figure 9)
VIN = VIL or VIH
VNO 1.0 V or 4.5 V with VNC
floating or
VNO 1.0 V or 4.5 V with VNO
floating
VCOM = 1.0 V or 4.5 V
5.5
1
10
100
nA
(ON)
RON
)
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3
NLAS4599
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Guaranteed Max Limit
Symbol
Parameter
VCC
VIS
−55 to 255C
<855C
<1255C
Test Conditions
(V)
(V)
Min
Typ*
Max
Min
Max
Min
Max
Unit
tON
Turn−On Time
(Figures 12 and 13)
RL = 300 CL = 35 pF
(Figures 5 and 6)
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
5
5
2
2
23
16
11
9
28
21
16
14
5
5
2
2
30
25
20
20
5
5
2
2
30
25
20
20
ns
tOFF
Turn−Off Time
(Figures 12 and 13)
RL = 300 CL = 35 pF
(Figures 5 and 6)
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
1
1
1
1
7
5
4
3
12
10
9
8
1
1
1
1
15
15
12
12
1
1
1
1
15
15
12
12
ns
tBBM
Minimum
Break−Before−Make
Time
VIS = 3.0 V (Figure 4)
RL = 300 CL = 35 pF
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
1
1
1
1
12
11
6
5
1
1
1
1
1
1
1
1
ns
*Typical Characteristics are at 25°C.
Typical @ 25, VCC = 5.0 V
CIN
CNO or CNC
CCOM
C(ON)
Maximum Input Capacitance, Select Input
Analog I/O (switch off)
Common I/O (switch off)
Feedthrough (switch on)
8
10
10
20
pF
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
Symbol
Parameter
Condition
VCC
(V)
Typical
25°C
Unit
BW
Maximum On−Channel −3dB Bandwidth or
Minimum Frequency Response
(Figure 10)
VIN = 0 dBm
VIN centered between VCC and GND
(Figure 7)
3.0
4.5
5.5
170
200
200
MHz
VONL
Maximum Feedthrough On Loss
VIN = 0 dBm @ 100 kHz to 50 MHz
VIN centered between VCC and GND
(Figure 7)
3.0
4.5
5.5
−3
−3
−3
dB
VISO
Off−Channel Isolation
(Figure 10)
f = 100 kHz; VIS = 1 V RMS
VIN centered between VCC and GND
(Figure 7)
3.0
4.5
5.5
−93
−93
−93
dB
Q
Charge Injection Select Input to
Common I/O
(Figure 15)
VIN = VCC to GND, FIS = 20 kHz
tr = tf = 3 ns
RIS = 0 , CL = 1000 pF
Q = CL * VOUT
(Figure 8)
3.0
5.5
1.5
3.0
pC
THD
Total Harmonic Distortion
THD + Noise
(Figure 14)
FIS = 20 Hz to 100 kHz, RL = Rgen = 600 ,
CL = 50 pF
VIS = 5.0 VPP sine wave
5.5
0.1
%
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4
NLAS4599
VCC
DUT
VCC
Input
Output
GND
VOUT
0.1 F
300
tBMM
35 pF
90%
90% of VOH
Output
Switch Select Pin
GND
Figure 4. tBBM (Time Break−Before−Make)
VCC
DUT
VCC
0.1 F
Input
Output
50%
0V
VOUT
Open
50%
300
VOH
35 pF
90%
90%
Output
VOL
Input
tON
tOFF
Figure 5. tON/tOFF
VCC
VCC
Input
DUT
Output
50%
300 VOUT
Open
50%
0V
VOH
35 pF
Output
10%
VOL
Input
tOFF
Figure 6. tON/tOFF
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5
10%
tON
NLAS4599
50 DUT
Reference
Transmitted
Input
Output
50 Generator
50 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is
the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction.
ǒVVOUT
Ǔ for VIN at 100 kHz
IN
VOUT
Ǔ for VIN at 100 kHz to 50 MHz
VONL = On Channel Loss = 20 Log ǒ
VIN
VISO = Off Channel Isolation = 20 Log
Bandwidth (BW) = the frequency 3 dB below VONL
Figure 7. Off Channel Isolation/On Channel Loss (BW)/Crosstalk
(On Channel to Off Channel)/VONL
DUT
VCC
VIN
Output
Open
GND
CL
Output
Off
On
VIN
Figure 8. Charge Injection: (Q)
100
LEAKAGE (nA)
10
1
0.1
ICOM(ON)
ICOM(OFF)
0.01
0.001
−55
VCC = 5.0 V
INO(OFF)
−20
25
70
85
TEMPERATURE (°C)
Figure 9. Switch Leakage vs. Temperature
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6
125
Off
VOUT
NLAS4599
0
Bandwidth
(ON−RESPONSE)
−40
PHASE (Degree)
−20
0
(dB)
Off Isolation
−60
VCC = 5.0 V
TA = 25°C
−80
−100
0.01
0.1
1
10
FREQUENCY (MHz)
10
20
30
VCC = 5.0 V
TA = 25°C
100 200
0.01
30
30
25
25
20
20
15
tON (ns)
10
tOFF (ns)
5
0
2.5
3
3.5
4
4.5
100 200
VCC = 4.5 V
15
10
tON
5
tOFF
0
−55
5
−40
25
125
85
VCC (VOLTS)
Temperature (°C)
Figure 12. tON and tOFF vs. VCC at 255C
Figure 13. tON and tOFF vs. Temp
1
3.0
VINpp = 3.0 V
VCC = 3.6 V
2.5
2.0
Q (pC)
THD + NOISE (%)
1
10
FREQUENCY (MHz)
Figure 11. Phase vs. Frequency
TIME (ns)
TIME (ns)
Figure 10. Bandwidth and Off−Channel
Isolation
0.1
0.1
VINpp = 5.0 V
VCC = 5.5 V
VCC = 5 V
1.5
1.0
0.5
VCC = 3 V
0
0.01
1
10
−0.5
100
0
1
2
3
4
FREQUENCY (kHz)
VCOM (V)
Figure 14. Total Harmonic Distortion
Plus Noise vs. Frequency
Figure 15. Charge Injection vs. COM Voltage
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7
5
NLAS4599
100
100
VCC = 2.0 V
10
80
RON ()
ICC (nA)
1
0.1
0.01
60
VCC = 2.5 V
40
VCC = 3.0 V
0.001
VCC = 3.0 V
VCC = 4.0 V
20
0.0001
VCC = 5.0 V
0.00001
−40
−20
0
20
60
VCC = 5.5 V
80
100
0
0.0
120
4.0
5.0
Figure 16. ICC vs. Temp, VCC = 3 V & 5 V
Figure 17. RON vs. VCC, Temp = 255C
90
80
80
70
70
60
60
RON ()
100
RON ()
3.0
VIS (VDC)
90
50
40
125°C
30
20
50
40
25°C
20
−55°C
−55°C
10
85°C
0.5
6.0
30
25°C
0
0.0
2.0
Temperature (°C)
100
10
1.0
1.0
1.5
2.0
0
0.0
2.5
85°C
125°C
0.5
1.0
1.5
VIS (VDC)
2.0
2.5
3.0
VIS (VDC)
Figure 18. RON vs Temp, VCC = 2.0 V
Figure 19. RON vs. Temp, VCC = 2.5 V
50
30
45
25
40
20
30
RON ()
RON ()
35
25
20
125°C
15
0
0.0
10
85°C
10
5
15
−55°C
0.5
5
25°C
1.0
1.5
2.0
2.5
3.0
3.5
0
0.0
25°C
85°C
125°C
−55°C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VIS (VDC)
VIS (VDC)
Figure 21. RON vs. Temp, VCC = 4.5 V
Figure 20. RON vs. Temp, VCC = 3.0 V
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8
4.5
NLAS4599
25
25
125°C
20
20
RON ()
RON ()
125°C
15
25°C
10
−55°C
85°C
5
15
25°C
10
85°C
−55°C
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
5.0
VIS (VDC)
VIS (VDC)
Figure 22. RON vs. Temp, VCC = 5.0 V
Figure 23. RON vs. Temp, VCC = 5.5 V
ORDERING INFORMATION
Device Nomenclature
Circuit
Indicator
Technology
Device
Function
Suffix
Package
Shipping†
NLAS4599DFT2
NL
AS
DF
T2
SC−88
3000 / Tape & Reel
NLAS4599DFT2G
NL
AS
DF
T2G
SC−88
(Pb−Free)
3000 / Tape & Reel
NLAS4599DTT1
NL
AS
DT
T1
TSOP−6
3000 / Tape & Reel
NLAS4599DTT1G
NL
AS
DT
T1G
TSOP−6
(Pb−Free)
3000 / Tape & Reel
NLVAS4599DFT2
NL
AS
DF
T2
SC−88
3000 / Tape & Reel
NLVAS4599DFT2G
NL
AS
DF
T2G
SC−88
(Pb−Free)
3000 / Tape & Reel
NLVAS4599DTT1G
NL
AS
DT
T1G
TSOP−6
(Pb−Free)
3000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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9
NLAS4599
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
e
6
5
4
1
2
3
HE
DIM
A
A1
A3
b
C
D
E
e
L
HE
−E−
b 6 PL
0.2 (0.008)
M
E
M
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
A3
C
A
A1
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
SC−88/SC70−6/SOT−363
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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10
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
NLAS4599
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE S
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
D
6
HE
1
5
4
2
3
E
b
e
c
A
0.05 (0.002)
q
L
A1
DIM
A
A1
b
c
D
E
e
L
HE
q
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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http://onsemi.com
11
ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
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NLAS4599/D