ON MJD44H11-001 Complementary power transistor Datasheet

MJD44H11 (NPN)
MJD45H11 (PNP)
Preferred Device
Complementary Power
Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS, 20 WATTS
Features
• Lead Formed for Surface Mount Application in Plastic Sleeves
•
•
•
•
•
•
•
•
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Electrically Similar to Popular D44H/D45H Series
Low Collector Emitter Saturation Voltage −
VCE(sat) = 1.0 Volt Max @ 8.0 Amperes
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
Pb−Free Packages are Available
MARKING
DIAGRAMS
4
1 2
3
Rating
Emitter−Base Voltage
Collector Current
− Continuous
− Peak
DPAK
CASE 369C
STYLE 1
4
MAXIMUM RATINGS
Collector−Emitter Voltage
YWW
J4
xH11G
Symbol
Max
Unit
VCEO
80
Vdc
VEB
5
Vdc
IC
8
16
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
YWW
J4
xH11G
1
2
3
DPAK−3
CASE 369D
STYLE 1
W
20
0.16
W/°C
W
1.75
0.014
W/°C
−55 to +150
°C
Y
WW
J4xH11
G
= Year
= Work Week
= Device Code
x = 4 or 5
= Pb−Free Package
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristic
RqJC
6.25
°C/W
Thermal Resistance, Junction−to−Ambient
(Note 1)
RqJA
71.4
°C/W
TL
260
°C
Lead Temperature for Soldering
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 7
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJD44H11/D
MJD44H11 (NPN) MJD45H11 (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
80
−
−
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, VBE = 0)
ICES
−
−
10
mA
Emitter Cutoff Current
(VEB = 5 Vdc)
IEBO
−
−
50
mA
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.4 Adc)
VCE(sat)
−
−
1
Vdc
Base−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
VBE(sat)
−
−
1.5
Vdc
hFE
60
−
−
−
40
−
−
−
−
130
230
−
−
−
−
50
40
−
−
−
−
300
135
−
−
−
−
500
500
−
−
−
−
140
100
−
−
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mA, IB = 0)
ON CHARACTERISTICS
DC Current Gain
(VCE = 1 Vdc, IC = 2 Adc)
DC Current Gain
(VCE = 1 Vdc, IC = 4 Adc)
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, ftest = 1 MHz)
Ccb
MJD44H11
MJD45H11
Gain Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
pF
fT
MJD44H11
MJD45H11
MHz
SWITCHING TIMES
Delay and Rise Times
(IC = 5 Adc, IB1 = 0.5 Adc)
td + tr
MJD44H11
MJD45H11
Storage Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
ns
ts
MJD44H11
MJD45H11
Fall Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc
ns
tf
MJD44H11
MJD45H11
http://onsemi.com
2
ns
MJD44H11 (NPN) MJD45H11 (PNP)
ORDERING INFORMATION
Device
MJD44H11
MJD44H11G
MJD44H11−001
MJD44H11−001G
MJD44H11RL
MJD44H11RLG
MJD44H11T4
MJD44H11T4G
MJD44H11T5
MJD44H11T5G
MJD45H11
MJD45H11G
MJD45H11−001
MJD45H11−001G
MJD45H11RL
MJD45H11RLG
Package Type
Package
Shipping †
DPAK
369C
DPAK
(Pb−Free)
75 Units / Rail
DPAK−3
369D
DPAK−3
(Pb−Free)
DPAK
1800 Tape & Reel
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
369C
DPAK
2500 Tape & Reel
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
75 Units / Rail
DPAK−3
369D
DPAK−3
(Pb−Free)
DPAK
1800 Tape & Reel
DPAK
(Pb−Free)
369C
MJD45H11T4
MJD45H11T4G
DPAK
2500 Tape & Reel
DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
3
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
MJD44H11 (NPN) MJD45H11 (PNP)
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
RqJC(t) = r(t) RqJC
RqJC = 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
0.1
0.1
0.07
0.05
0.05
0.02
0.01
0.03
0.02
P(pk)
t1
SINGLE PULSE
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
t2
DUTY CYCLE, D = t1/t2
50
100
200 300
500
1k
Figure 1. Thermal Response
IC, COLLECTOR CURRENT (AMP)
20
10
500ms
5
3
2
dc
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
v 150_C. T J(pk) may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100ms
1ms
5ms
1
0.5
0.3
THERMAL LIMIT @ TC = 25°C
WIRE BOND LIMIT
0.1
0.05
1
3
5
7 10
20 30
50
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
70 100
Figure 2. Maximum Forward Bias
Safe Operating Area
TA TC
2.5 25
PD, POWER DISSIPATION (WATTS)
0.02
2 20
TC
1.5 15
TA
SURFACE
MOUNT
1 10
0.5
5
0
0
25
50
75
100
T, TEMPERATURE (°C)
Figure 3. Power Derating
http://onsemi.com
4
125
150
MJD44H11 (NPN) MJD45H11 (PNP)
1000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
1000
VCE = 4 V
100
VCE = 1 V
TJ = 25°C
10
0.1
1
1
10
IC, COLLECTOR CURRENT (AMPS)
Figure 4. MJD44H11 DC Current Gain
Figure 5. MJD45H11 DC Current Gain
1000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
TJ = 25°C
IC, COLLECTOR CURRENT (AMPS)
TJ = 125°C
25°C
100
−40 °C
VCE = 1 V
0.1
1
VCE = 1 V
0.1
1
10
Figure 6. MJD44H11 Current Gain
versus Temperature
Figure 7. MJD45H11 Current Gain
versus Temperature
SATURATION VOLTAGE (VOLTS)
1.2
VBE(sat)
0.6
0
0.1
100
IC, COLLECTOR CURRENT (AMPS)
0.8
0.2
25°C
−40 °C
IC, COLLECTOR CURRENT (AMPS)
1
0.4
TJ = 125°C
10
10
1.2
SATURATION VOLTAGE (VOLTS)
1V
10
0.1
10
1000
10
VCE = 4 V
100
IC/IB = 10
TJ = 25°C
VCE(sat)
1
IC, COLLECTOR CURRENT (AMPS)
1
0.8
0.6
0.4
IC/IB = 10
TJ = 25°C
VCE(sat)
0.2
0
0.1
10
VBE(sat)
Figure 8. MJD44H11 On−Voltages
1
IC, COLLECTOR CURRENT (AMPS)
Figure 9. MJD45H11 On−Voltages
http://onsemi.com
5
10
MJD44H11 (NPN) MJD45H11 (PNP)
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
MJD44H11 (NPN) MJD45H11 (PNP)
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
STYLE 1:
PIN 1.
2.
3.
4.
T
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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