Vishay BYQ28E-200-E3 Dual common cathode ultrafast rectifier Datasheet

BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Ultrafast Rectifier
TO-220AB
FEATURES
ITO-220AB
2
3
1
1
BYQ28E, UG10
2
3
BYQ28EF, UGF10
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 3
PIN 2
TO-263AB
K
For use in low voltage, high frequency rectifier of switching
power supplies, freewheeling diodes, DC/DC converters
and polarity protection application.
1
BYQ28EB, UGB10
PIN 2
Power pack
Available
Glass passivated pellet chip junction
Ultrafast recovery times
Soft recovery characteristics
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
2
PIN 1
•
•
•
•
•
•
•
K
HEATSINK
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
100 V to 200 V
IFSM
55 A
trr
25 ns
VF
0.895 V
TJ max.
150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB
Diode variations
Common cathode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UG10BCT
UG10CCT
UG10DCT
BYQ28E-100 BYQ28E-150 BYQ28E-200
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
150
200
V
Working peak reverse voltage
VRWM
100
150
200
V
VDC
100
150
200
V
Maximum DC blocking voltage
Maximum average forward rectified current at TC = 100 °C
total device
per diode
IF(AV)
10
5.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
55
A
Non-repetitive peak reverse current per diode at tp = 100 μs
IRSM
0.2
A
VC
8
kV
TJ, TSTG
-40 to +150
°C
VAC
1500
V
Electrostatic discharge capacitor voltage,
human body model: C = 250 pF, R = 1.5 k
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Revision: 23-Feb-16
Document Number: 88549
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 10 A
Maximum instantaneous forward voltage
per diode
SYMBOL
VF (1)
1.10
TJ = 150 °C
V
0.895
TJ = 25 °C
Maximum reverse current per diode at
working peak reverse voltage
UNIT
1.25
TJ = 25 °C
IF = 5 A
VALUE
10
IR
TJ = 100 °C
μA
200
Maximum reverse recovery time per diode
IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V, Irr = 0.1 IRM
trr
25
ns
Maximum reverse recovery time per diode
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
20
ns
Maximum stored charge per diode
IF = 2 A, dI/dt = 20 A/μs, VR = 30 V, Irr = 0.1 IRM
Qrr
9
nC
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UG10
UGF10
UGB10
BYQ28E
BYQ28EF
BYQ28EB
Typical thermal resistance per diode, junction to ambient
RJA
50
55
50
Typical thermal resistance per diode, junction to case
RJC
4.5
6.7
4.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
BYQ28E-200-E3/45
1.80
45
50/tube
Tube
ITO-220AB
BYQ28EF-200-E3/45
1.95
45
50/tube
Tube
TO-263AB
BYQ28EB-200-E3/45
1.77
45
50/tube
Tube
TO-263AB
BYQ28EB-200-E3/81
1.77
81
800/reel
Tape and reel
TO-220AB
BYQ28E-200HE3/45 (1)
1.80
45
50/tube
Tube
ITO-220AB
BYQ28EF-200HE3/45 (1)
1.95
45
50/tube
Tube
TO-263AB
BYQ28EB-200HE3/45 (1)
1.77
45
50/tube
Tube
TO-263AB
(1)
1.77
81
800/reel
Tape and reel
BYQ28EB-200HE3/81
Note
Automotive grade
(1)
Revision: 23-Feb-16
Document Number: 88549
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
15
Instantaneous Reverse Current (μA)
1000
Average Forward Current (A)
Resistive or Inductive Load
10
5
TJ = 100 °C
100
10
1
TJ = 25 °C
0.1
0
50
0
150
100
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
Stored Charge/Reverse Recovery Time
(nC/ns)
100
Peak Forward Surge Current (A)
TJ = 125 °C
TC = 105 °C
8.3 ms Single Half Sine-Wave
10
1
10
1
50
at 2 A, 20 A/μs
40
at 5 A, 50 A/μs
30
at 1 A, 100 A/μs
20
at 5 A, 50 A/μs
at 1 A, 100 A/μs
10
trr
Qrr
at 2 A, 20 A/μs
0
25
100
50
75
100
125
Number of Cycles at 60 Hz
Junction Temperature (°C)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Reverse Switching Characteristics Per Diode
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Pulse Width = 300 μs
1 % Duty Cycle
10
TJ = 125 °C
TJ = 100 °C
1
0.1
0.01
0.2
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TJ = 25 °C
0.4
0.6
0.8
1.0
1.2
1.4
10
1
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
Revision: 23-Feb-16
Document Number: 88549
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.104 (2.65)
0.096 (2.45)
0.671 (17.04)
0.651 (16.54)
PIN
1
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
3
0.245 (6.22)
MIN.
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
TO-263AB
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
K
2
0.624 (15.85)
0.591 (15.00)
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
K
1
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.022 (0.56)
0.014 (0.36)
0.190 (4.83)
0.160 (4.06)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.411 (10.45)
0.380 (9.65)
7° REF.
7° REF.
0.560 (14.22)
0.530 (13.46)
0.205 (5.20)
0.195 (4.95)
2
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.350 (8.89)
0.330 (8.38)
0.603 (15.32)
0.573 (14.55)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.145 (3.68)
0.135 (3.43)
7° REF.
0.076 (1.93) REF.
45° REF.
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 23-Feb-16
Document Number: 88549
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 08-Feb-17
1
Document Number: 91000