SIRECT MUR6020 Ultra fast recovery diode Datasheet

MUR6020
Ultra Fast Recovery Diodes
Dimensions TO-247AC
A
C(TAB)
C
A
C
A=Anode, C=Cathode, TAB=Cathode
MUR6020
VRSM
V
200
Symbol
IFRMS
IFAVM
IFRM
IFSM
Test Conditions
Inches
Min.
Max.
A
B
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
C
D
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
1.5
2.49
0.087
0.102
Unit
TVJ=TVJM
TC=85oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
98
69
800
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
600
650
540
580
A
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
1800
1770
1460
1410
A2s
TVJ=150oC
TVJ=150oC
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md
Mounting torque
Weight
Millimeter
Min. Max.
Maximum Ratings
TVJ=45oC
I2t
VRRM
V
200
Dim.
o
C
150
W
0.8...1.2
Nm
6
g
MUR6020
Ultra Fast Recovery Diodes
Symbol
Test Conditions
IR
TVJ=25oC; VR=VRRM
TVJ=25oC; VR=0.8.VRRM
TVJ=125oC; VR=0.8.VRRM
VF
VTO
rT
Characteristic Values
typ.
max.
50
40
11
uA
uA
mA
IF=60A; TVJ=150oC
TVJ=25oC
0.88
1.08
V
For power-loss calculations only
0.70
V
TVJ=TVJM
4.0
RthJC
RthCK
RthJA
trr
IRM
Unit
m
0.75
K/W
0.25
35
IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC
o
_
VR=100V; IF=60A; -diF/dt=200A/us; L<0.05uH;
TVJ=100 C
35
50
ns
8
10
A
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
JEDEC TO-247AC
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
MUR6020
Ultra Fast Recovery Diodes
160
A
140
0.8
30
TVJ= 100°C
VR = 100V
uC
25
Qr
IF
IRM
0.6
120
IF= 35A
IF= 70A
IF=140A
100
80
TVJ= 100°C
VR = 100V
A
20
0.4
IF= 35A
IF= 70A
IF=140A
15
TVJ=150°C
60
10
TVJ=100°C
40
0.2
5
20
TVJ=25°C
0
0.0
0.4
0.8
0.0
10
1.2 V
0
100
VF
Fig. 1 Forward current IF versus VF
Fig. 2 Typ. reverse recovery charge Qr
versus -diF/dt
1.6
70
ns
1.4
Kf
40
0.8
30
IRM
0.6
200
400
600 A/us
800 1000
-diF/dt
Fig. 3 Typ. peak reverse current IRM
versus -diF/dt
5
2.5
TVJ= 100°C
IF = 100A us
V
VFR
50
1.0
0
TVJ= 100°C
VR = 100V
60
trr
1.2
A/us 1000
-diF/dt
4
2.0
tfr
tfr
IF=35A
IF=70A
IF=140A
VFR
3
1.5
2
1.0
1
0.5
20
Qr
0.4
10
0.2
0
0
40
80
120 °C 160
0
0
200
400
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
600 A/us
800
-diF/dt
Fig. 5 Typ. recovery time trr
versus -diF/dt
1.0
K/W
0.8
ZthJC
0.6
0.4
0.2
0.0
0.001
0.01
0.1
s
1
t
Fig. 7 Transient thermal impedance junction to case
10
1000
0
200
400
600
diF/dt
0.0
A/us
800
Fig. 6 Typ peak forward voltage
VFR and tfr versus diF/dt
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