MUR6020 Ultra Fast Recovery Diodes Dimensions TO-247AC A C(TAB) C A C A=Anode, C=Cathode, TAB=Cathode MUR6020 VRSM V 200 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 Unit TVJ=TVJM TC=85oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 98 69 800 A TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 600 650 540 580 A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 1800 1770 1460 1410 A2s TVJ=150oC TVJ=150oC -40...+150 150 -40...+150 TVJ TVJM Tstg Ptot TC=25oC Md Mounting torque Weight Millimeter Min. Max. Maximum Ratings TVJ=45oC I2t VRRM V 200 Dim. o C 150 W 0.8...1.2 Nm 6 g MUR6020 Ultra Fast Recovery Diodes Symbol Test Conditions IR TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM VF VTO rT Characteristic Values typ. max. 50 40 11 uA uA mA IF=60A; TVJ=150oC TVJ=25oC 0.88 1.08 V For power-loss calculations only 0.70 V TVJ=TVJM 4.0 RthJC RthCK RthJA trr IRM Unit m 0.75 K/W 0.25 35 IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC o _ VR=100V; IF=60A; -diF/dt=200A/us; L<0.05uH; TVJ=100 C 35 50 ns 8 10 A FEATURES APPLICATIONS ADVANTAGES * International standard package JEDEC TO-247AC * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling MUR6020 Ultra Fast Recovery Diodes 160 A 140 0.8 30 TVJ= 100°C VR = 100V uC 25 Qr IF IRM 0.6 120 IF= 35A IF= 70A IF=140A 100 80 TVJ= 100°C VR = 100V A 20 0.4 IF= 35A IF= 70A IF=140A 15 TVJ=150°C 60 10 TVJ=100°C 40 0.2 5 20 TVJ=25°C 0 0.0 0.4 0.8 0.0 10 1.2 V 0 100 VF Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt 1.6 70 ns 1.4 Kf 40 0.8 30 IRM 0.6 200 400 600 A/us 800 1000 -diF/dt Fig. 3 Typ. peak reverse current IRM versus -diF/dt 5 2.5 TVJ= 100°C IF = 100A us V VFR 50 1.0 0 TVJ= 100°C VR = 100V 60 trr 1.2 A/us 1000 -diF/dt 4 2.0 tfr tfr IF=35A IF=70A IF=140A VFR 3 1.5 2 1.0 1 0.5 20 Qr 0.4 10 0.2 0 0 40 80 120 °C 160 0 0 200 400 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 600 A/us 800 -diF/dt Fig. 5 Typ. recovery time trr versus -diF/dt 1.0 K/W 0.8 ZthJC 0.6 0.4 0.2 0.0 0.001 0.01 0.1 s 1 t Fig. 7 Transient thermal impedance junction to case 10 1000 0 200 400 600 diF/dt 0.0 A/us 800 Fig. 6 Typ peak forward voltage VFR and tfr versus diF/dt