MSC80917 NPN SILICON RF MICROWAVE TRANSISTOR PACKAGE STYLE .280 2L FL (B) DESCRIPTION: The ASI MSC80917 is low level Class-C, Common Base Device Designed for IFF, DME driver Applications. 2 1 3 FEATURES INCLUDE: • Omnigold™ Metalization System • POUT 4.0 W Min. • GP = 10 dB MAXIMUM RATINGS IC 1.0 A VCE 37 V PDISS 7.5 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 35 °C/W 1 = COLLECTOR CHARACTERISTICS 2 = BASE 3 = EMITTER TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 45 V BVCEO IC = 5.0 mA 20 V BVEBO IE = 1.0 mA 3.5 V ICES VCE = 35 V hFE VCE = 5.0 V GP POUT η VCE = 35 V 1.0 IC = 100 mA PIN = 400 mW PULSE WIDTH = 10 µS 20 f = 1025 to 1150 MHz DUTY CYCLE = 1.0% 10 4.0 35 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. mA 120 dB W % REV. A 1/1