DMP1080UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA Features = +25°C) VDSS RDS(on) Qg Qgd ID -12V 65mΩ 2.5nC 0.6nC -3.3A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 65mΩ to Minimize On-State Losses Qg = 2.5nC for Ultra-Fast Switching Vgs(th) = -0.6V typ. for a Low Turn-On Potential CSP with Footprint 1.0mm × 1.0mm Height = 0.62mm for Low Profile ESD = 3kV HBM Protection of Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications Mechanical Data Battery Management Load Switch Battery Protection Case: U-WLB1010-4 Terminal Connections: See Diagram Below Weight: 0.0018 grams (Approximate) U-WLB1010-4 D D G S ESD PROTECTED TO 3kV Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMP1080UCB4-7 Notes: Case U-WLB1010-4 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information U-WLB1010-4 BW YM BW = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMP1080UCB4 Document number: DS35827 Rev. 5 - 2 Mar 3 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D May 2015 © Diodes Incorporated DMP1080UCB4 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -4.5V Steady State Continuous Drain Current (Note 5) VGS = -2.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value -12 -6 -3.3 -2.7 ID IDM -3.0 -2.4 20 Symbol PD RθJA RθJC PD RθJA TJ, TSTG Value 0.82 150 42.66 1.59 80.29 -55 to +150 ID Pulsed Drain Current (Note 6) Unit V V A A A Thermal Characteristics Characteristic Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7) Thermal Resistance, Junction to Case @TC = +25°C (Note 7) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range Electrical Characteristics Unit W °C/W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS BVGSS IDSS IGSS -12 -6.0 - - -1 -100 V V A nA VGS = 0V, ID = -250μA VDS = 0V, IG = -250μA VDS = -9.6V, VGS = 0V VGS = -6V, VDS = 0V VGS(th) RDS (ON) - -0.6 65 77 108 4 -0.6 2.0 9.5 -1.0 80 93 130 -1.0 - V Static Drain-Source On-Resistance -0.4 - VDS = VGS, ID = -250μA VGS = -4.5V, ID = -500mA VGS = -2.5V, ID = -500mA VGS = -1.5V, ID = -500mA VDS = -6V, ID = -500mA VGS = 0V, IS = -500mA Vdd = –4.0V, IF = –0.5A, di/dt =100A/μs - 213 119 54.4 2.5 0.3 0.6 0.15 16.7 20.6 38.4 28.4 350 250 90 5 - Forward Transfer Admittance Diode Forward Voltage Reverse Recovery Charge Reverse Recovery Time DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Charge at Vth Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: |Yfs| VSD Qrr trr Ciss Coss Crss Qg Qgs Qgd Qg(th) tD(on) tr tD(off) tf mΩ S V nC ns Test Condition pF VDS = -6V, VGS = 0V, f = 1.0MHz nC VGS = -4.5V, VDS = -6V, ID = -500mA ns VDS = -6V, VGS = -2.5V, RG = 20Ω, ID = -500mA 5. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. 6. Repetitive rating, pulse width limited by junction temperature. 7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMP1080UCB4 Document number: DS35827 Rev. 5 - 2 2 of 6 www.diodes.com May 2015 © Diodes Incorporated DMP1080UCB4 5.0 4.5 VGS = -4.5V VDS = -5.0V VGS = -4.0V 4.0 4 VGS = -3.0V 3.5 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 5 VGS = -6.0V VGS = -2.5V VGS = -2.0V 3.0 VGS = -1.5V 2.5 2.0 1.5 1.0 3 2 TA = 150C 1 VGS = -1.2V 0.5 VGS = -1.0V 0 0.5 1.0 1.5 2.0 2.5 -V DS, DRAIN -SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0.18 0.16 0.14 VGS = -1.5V 0.12 0.10 VGS = -2.5V 0.08 VGS = -4.5V 0.06 VGS = -6.0V 0.04 0.02 0 0 0 3.0 0.20 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -ID, DRAIN SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.4 RDS(on), DRAIN-SOURCE ON-RESISTANCE ( ) 1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TA = 25C TA = -55 C RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 TA = 85C TA = 125 C VGS = -2.5V ID = -1.5A 1.2 VGS = -4.5V ID = -2.0A 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMP1080UCB4 Document number: DS35827 Rev. 5 - 2 3 of 6 www.diodes.com 0 0.5 1.0 1.5 -V GS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2.0 0.10 VGS = -4.5V TA = 150C 0.08 TA = 125C TA = 85 C T A = 25C 0.06 TA = -55C 0.04 0 1 2 3 4 -ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 5 0.16 0.14 0.12 VGS = -2.5V ID = -1.5A 0.10 0.08 0.06 VGS = -4.5V ID = -2.0A 0.04 0.02 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature May 2015 © Diodes Incorporated DMP1080UCB4 5 1.0 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 0.8 -ID = 1mA 0.6 -ID = 250µA 0.4 TA= 150C TA= 125C 3 T A= 85 C TA= 25C 2 TA= -55C 1 0.2 0 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 100,000 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 100 TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = 25°C 1 0.1 PW = 10µs R DS(on) Limited 10,000 -ID, DRAIN CURRENT (A) -IDSS, LEAKAGE CURRENT (nA) 4 0 1 10 DC 1 PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 T J(max) = 150°C TA = 25°C VGS = -6V Single Pulse DUT on 1 * MRP Board 2 3 4 5 6 7 8 9 10 11 12 -V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Drain-Source Leakage Current vs. Voltage 0.01 0.1 PW = 100µs 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 SOA, Safe Operation Area 100 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 RJA(t) = r(t) * RJA RJA = 153°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 DMP1080UCB4 Document number: DS35827 Rev. 5 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 11 Transient Thermal Resistance 4 of 6 www.diodes.com 10 100 1,000 May 2015 © Diodes Incorporated DMP1080UCB4 Package Outline Dimension Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. E D A2 A 4X-Ø b SD e U-WLB1010-4 Dim Min Max Typ D 0.95 1.05 1.00 E 0.95 1.05 1.00 A 0.62 A2 0.38 b 0.25 0.35 0.30 e 0.50 SD 0.25 SE 0.25 All Dimensions in mm SE e Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. ØD C Dimensions C D Value (in mm) 0.50 0.25 C DMP1080UCB4 Document number: DS35827 Rev. 5 - 2 5 of 6 www.diodes.com May 2015 © Diodes Incorporated DMP1080UCB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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