MMDT2227 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • A Complementary Pairs One 2222A Type (NPN) One 2907A Type (PNP) Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) C2 B1 SOT-363 E1 B C E2 B2 C1 H Mechanical Data • • • • • • • • • K M Case: SOT-363 J Case Material: Molded Plastic. UL Flammability L D F Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Note: E1, B1, and C1 = 2907A Type (PNP) Terminals: Solderable per MIL-STD-202, Method 208 E2, B2, and C2 = 2222A Type (NPN) Type marking indicates orientation Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe) C2 B1 E1 Terminal Connections: See Diagram Ordering & Date Code Information: See Page 4 Marking Information: K27, See Page 4 Weight: 0.006 grams (approximate) E2 Maximum Ratings, Total Device B2 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J — 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 α 0.25 8° All Dimensions in mm C1 @TA = 25°C unless otherwise specified Symbol Value Total Power Dissipation Characteristic (Note 1) Pd 200 mW Thermal Resistance, Junction to Ambient (Note 1) RθJA 625 °C/W Tj, TSTG -55 to +150 °C Operating and Storage Temperature Range Maximum Ratings, 2222A Type (NPN) Characteristic Unit @TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V VEBO 6.0 V IC 600 mA Symbol Value Unit VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5.0 V IC -600 mA Emitter-Base Voltage Collector Current - Continuous Maximum Ratings, 2907A Type (PNP) Characteristic @TA = 25°C unless otherwise specified Collector-Base Voltage Collector Current - Continuous Notes: 1. 2. 3. 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30122 Rev. 11 - 2 1 of 4 www.diodes.com MMDT2227 © Diodes Incorporated Electrical Characteristics, 2222A Type (NPN) @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 75 ⎯ V IC = 10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ⎯ V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ⎯ V IE = 10μA, IC = 0 VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 150°C ICBO ⎯ 10 nA μA Collector Cutoff Current ICEX ⎯ 10 nA VCE = 60V, VEB(OFF) = 3.0V Emitter Cutoff Current IEBO ⎯ 10 nA VEB = 3.0V, IC = 0 IBL ⎯ 20 nA VCE = 60V, VEB(OFF) = 3.0V hFE 35 50 75 100 40 50 35 ⎯ ⎯ ⎯ 300 ⎯ ⎯ ⎯ ⎯ IC = 100μA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, TA = -55°C IC = 150mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.3 1.0 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(SAT) 0.6 ⎯ 1.2 2.0 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Cobo ⎯ 8 pF VCB = 10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ⎯ 25 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Current Gain-Bandwidth Product fT 300 ⎯ MHz VCE = 20V, IC = 20mA, f = 100MHz Noise Figure NF ⎯ 4.0 dB VCE = 10V, IC = 100μA, RS = 1.0kΩ, f = 1.0kHz Delay Time td ⎯ 10 ns Rise Time tr ⎯ 25 ns Storage Time ts ⎯ 225 ns Fall Time tf ⎯ 60 ns Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain SMALL SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 5. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%. Note: 100 VCE COLLECTOR-EMITTER VOLTAGE (V) 2.0 f = 1MHz CAPACITANCE (pF) 30 20 Cibo 10 5.0 Cobo 1.8 1.6 1.4 1.2 1.0 1.0 0.1 DS30122 Rev. 11 - 2 1.0 10 VR, REVERSE VOLTAGE (V) Fig. 1 (2222A) Typical Capacitance 0.8 0.6 0.4 0.2 0 0.001 50 2 of 4 www.diodes.com 0.1 10 1 IB, BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region (2222A Type - NPN) 0.01 100 MMDT2227 © Diodes Incorporated Electrical Characteristics, 2907A Type (PNP) @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -60 ⎯ V IC = -10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 ⎯ V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ⎯ V IE = -10μA, IC = 0 VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = 125°C Collector Cutoff Current ICBO ⎯ -10 nA μA Collector Cutoff Current ICEX ⎯ -50 nA VCE = -30V, VEB(OFF) = -0.5V IBL ⎯ -50 nA VCE = -30V, VEB(OFF) = -0.5V hFE 75 100 100 100 50 ⎯ ⎯ ⎯ 300 ⎯ ⎯ IC = -100µA, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.4 -1.6 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(SAT) ⎯ -1.3 -2.6 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Cobo ⎯ 8.0 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ⎯ 30 pF VEB = -2.0V, f = 1.0MHz, IC = 0 fT 200 ⎯ MHz Turn-On Time ton ⎯ 45 ns Delay Time td ⎯ 10 ns Rise Time tr ⎯ 40 ns Turn-Off Time toff ⎯ 100 ns Storage Time ts ⎯ 80 ns Fall Time tf ⎯ 30 ns Base Cutoff Current ON CHARACTERISTICS (Note 6) DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = -20V, IC = -50mA, f = 100MHz SWITCHING CHARACTERISTICS Notes: 6. VCC = -30V, IC = -150mA, IB1 = -15mA ⎯ VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA Short duration pulse test used to minimize self-heating effect. -1.6 VCE, COLLECTOR-EMITTER VOLTAGE (V) 100 f = 1MHz CAPACITANCE (pF) ⎯ 30 20 Cibo 10 5.0 1.0 -0.1 DS30122 Rev. 11 - 2 Cobo -1.0 -10 VR, REVERSE VOLTAGE (V) Fig. 3 (2907A) Typical Capacitance IC = -10mA -1.4 -1.2 IC = -300mA IC = -100mA IC = -1mA IC = -30mA -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.001 -30 3 of 4 www.diodes.com -0.1 -0.01 -1 -10 IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region (2907A Type - PNP) -100 MMDT2227 © Diodes Incorporated Ordering Information Notes: 7. (Note 7) Device Packaging Shipping MMDT2227-7-F SOT-363 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Date Code Key Year Code 1998 J Month Code Jan 1 1999 K Feb 2 2000 L K27 YM Marking Information 2001 M 2002 N Mar 3 Apr 4 K27 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2003 P 2004 R May 5 Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30122 Rev. 11 - 2 4 of 4 www.diodes.com MMDT2227 © Diodes Incorporated