MSN2312 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 5A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V Lead Free ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Battery protection ● Load switch ● Power management Marking and pin assignment PIN Configuration D G S Schematic diagram SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSN2312 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V ID 5 A IDM 13.5 A PD 1.25 W TJ,TSTG -55 To 150 ℃ RθJA 100 ℃/W Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) MORE Semiconductor Company Limited http://www.moresemi.com 1/6 MSN2312 Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 22 - V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.5 0.65 1.2 V Drain-Source On-State Resistance RDS(ON) VGS=2.5V, ID=4.5 A - 20 35 mΩ VGS=4.5V, ID=5A - 17 28 mΩ VDS=15V,ID=5A 25 - - S - 780 - PF - 140 - PF Crss - 80 - PF Turn-on Delay Time td(on) - 9 - nS Turn-on Rise Time tr VDD=10V,ID=1A - 30 - nS td(off) VGS=4.5V,RGEN=6Ω - 35 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=10V,VGS=0V, F=1.0MHz (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf - 10 - nS Total Gate Charge Qg - 11.4 - nC Gate-Source Charge Qgs - 2.3 - nC Gate-Drain Charge Qgd - 2.9 - nC - - 1.2 V - - 5 A VDS=10V,ID=5A,VGS=4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) VSD VGS=0V,IS=1A IS Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSN2312 Typical Electrical and Thermal Characteristics Vdd Vgs Rgen td(on) Rl Vin D ton tr td(off) 90% Vout VOUT G toff tf 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(Ω) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) Figure 5 Output Characteristics MORE Semiconductor Company Limited ID- Drain Current (A) Figure 6 Drain-Source On-Resistance http://www.moresemi.com 3/6 ID- Drain Current (A) Normalized On-Resistance MSN2312 TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge MORE Semiconductor Company Limited Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward http://www.moresemi.com 4/6 ID- Drain Current (A) MSN2312 Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance MORE Semiconductor Company Limited http://www.moresemi.com 5/6 MSN2312 SOT-23 Package Information Symbol Dimensions in Millimeters MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e e1 0.950TYP 1.800 L 2.000 0.550REF L1 0.300 0.500 θ 0° 8° Notes 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. MORE Semiconductor Company Limited http://www.moresemi.com 6/6