PD - 9.1245B
IRF7403
PRELIMINARY
HEXFET® Power MOSFET
l
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Generation V Technology
Ultra Low On-Resistance
N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
VDSS = 30V
RDS(on) = 0.022Ω
T op V iew
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in
an application with dramatically reduced board space. The package is designed
for vapor phase, infra red, or wave soldering techniques. Power dissipation of
greater than 0.8W is possible in a typical PCB mount application.
S O -8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ,TSTG
Max.
10 Sec. Pulsed Drain Current, V GS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Units
9.7
8.5
5.4
34
2.5
0.02
±20
5.0
-55 to + 150
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient
Typ.
Max.
Units
–––
50
°C/W
8/25/97
IRF7403
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
30
–––
–––
–––
1.0
8.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.024
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
37
42
40
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
2.5
V(BR)DSS
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.022
VGS = 10V, ID = 4.0A
Ω
0.035
VGS = 4.5V, ID = 3.4A
–––
V
VDS = VGS, I D = 250µA
–––
S
VDS = 15V, ID = 4.0A
1.0
VDS = 24V, VGS = 0V
µA
25
VDS = 24V, VGS = 0V, TJ = 125°C
100
V GS = 20V
nA
-100
VGS = -20V
57
ID = 4.0A
6.8
nC VDS = 24V
18
V GS = 10V, See Fig. 6 and 12
–––
VDD = 15V
–––
ID = 4.0A
ns
–––
RG = 6.0Ω
–––
RD = 3.7Ω, See Fig. 10
D
4.0
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1200 –––
––– 450 –––
––– 160 –––
nH
Between lead tip
and center of die contact
pF
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
–––
G
S
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
IS
ISM
VSD
t rr
Qrr
ton
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 3.1
showing the
A
G
integral reverse
––– –––
34
p-n junction diode.
S
––– ––– 1.0
V
TJ = 25°C, IS = 2.0A, VGS = 0V
––– 52
78
ns
TJ = 25°C, IF = 4.0A
––– 93 140
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I SD ≤ 4.0A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
IRF7403
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
100
4.5V
10
20 µs P UL SE W ID TH
TJ = 25°C
1
0.01
VGS
15V
10V
8. 0V
7. 0V
6. 0V
5. 5V
5. 0V
BOTT OM 4.5V
TOP
I , D ra in -to -S o u rce C u rre n t (A )
D
I , D ra in -to -S o u rce C u rre n t (A )
D
TOP
0.1
1
10
A
100
4.5 V
10
20µ s PU L SE W ID TH
TJ = 1 50 °C
1
0.01
100
0.1
V D S , Drain-to-Source V oltage (V )
R D S (o n ) , D ra in -to -S o u rc e O n R e sis ta n c e
(N o rm a liz e d )
I D , Drain-to-Source Current (A)
TJ = 25 ° C
100
TJ = 150 ° C
V DS = 50V
15V
20µs PULSE WIDTH
5
6
7
8
9
A
100
Fig 2. Typical Output Characteristics
2.0
1000
4
10
V D S , Drain-to-S ource V oltage (V)
Fig 1. Typical Output Characteristics
10
1
10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
I D = 6.7 A
1.5
1.0
0.5
V G S = 10 V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF7403
V GS
C iss
C rss
C oss
C , C a p a c ita n c e (p F )
2000
=
=
=
=
20
0V,
f = 1M H z
C gs + C gd , C ds SH O R TED
C gd
C ds + C gd
V G S , G a te -to -S o u rc e V o lta g e (V )
2400
16
C i ss
1600
I D = 4.0A
VDS = 2 4V
12
C o ss
1200
800
C rs s
400
0
10
4
FO R TES T C IR CU IT
SEE FIG U RE 12
0
A
1
8
100
0
10
V D S , Drain-to-Source V oltage (V)
30
40
50
60
Q G , Total Gate Charge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
IS D , R e ve rs e D ra in C u rre n t (A )
20
10
TJ = 1 50 °C
TJ = 25 °C
1
VG S = 0 V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
V S D , Source-to-Drain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
3.0
100us
10
1ms
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
A
IRF7403
VDS
VGS
10.0
RD
D.U.T.
RG
+
- VDD
I D , Drain Current (A)
8.0
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6.0
Fig 10a. Switching Time Test Circuit
4.0
VDS
90%
2.0
10%
VGS
0.0
25
50
75
100
T C , Case Temperature
125
150
( ° C)
td(on)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response
(Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
PDM
0.02
1
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7403
Current Regulator
Same Type as D.U.T.
50KΩ
QG
.2µF
12V
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 12a. Basic Gate Charge Waveform
ID
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
IRF7403
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
**
• dv/dt controlled by RG
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS*
+
-
*
VDD
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[ VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For N-Channel HEXFETS
[ ISD]
IRF7403
Package Outline
SO-8 Outline
Dimensions are shown in millimeters (inches)
INCHES
DIM
D
-B-
5
8
7
1
2
6
5
3
0.25 (.010)
4
e
6X
M
A M
MIN
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
B
.014
.018
0.36
0.46
C
.0075
.0098
0.19
0.25
D
.189
.196
4.80
4.98
E
.150
.157
3.81
3.99
e
K x 45°
e1
e1
θ
A
-C-
0.10 (.004)
L
8X
A1
B 8X
0.25 (.010)
MAX
5
H
E
-A-
6
C
8X
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
.2284
.2440
5.80
K
.011
.019
0.28
0.48
L
0.16
.050
0.41
1.27
8°
0°
8°
0°
6.20
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
6
MAX
H
θ
M C A S B S
MILLIMETERS
MIN
0.72 (.028 )
8X
6.46 ( .255 )
1.78 (.070)
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X
Part Marking Information
SO-8
E X A M P LE : TH IS IS A N IR F 7 101
3 12
IN T E R N A TI ON A L
R E C T IF IE R
LO G O
D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W EEK
XX X X
F 7 101
T OP
PART NUMBER
W AFER
LO T C O D E
(LA S T 4 D IG IT S )
B O T TO M
IRF7403
Tape & Reel Information
SO-8
Dimensions are shown in millimeters (inches)
2 .0 5 (. 08 0)
1 .9 5 (. 07 7)
T E R M IN AT IO N
NU MB E R 1
1 .8 5 (. 07 2)
4 .1 0 (. 16 1)
1 .6 5 (. 06 5)
3 .9 0 (. 15 4)
1 .60 (. 06 2)
1 .50 (. 05 9)
0 .35 (.0 13 )
0 .25 (.0 10 )
5.5 5 (. 21 8)
5.4 5 (. 21 5)
1
F E E D D IR EC T IO N
5.3 0 (. 20 8)
5.1 0 (. 20 1)
12 .30 (.4 8 4)
11 .70 (.4 6 1)
2.6 0 (.1 02 )
1.5 0 (.0 59 )
8.1 0 (.31 8)
7.9 0 (.31 1)
2 .20 (.0 8 6)
2 .00 (.0 7 9)
6 .5 0 (.25 5)
6 .3 0 (.24 8)
1 3. 20 (.5 19 )
1 2. 80 (.5 04 )
1 5. 40 (.6 07 )
1 1. 90 (.4 69 )
2
50 .0 0
(1.9 69 )
M IN .
3 30 .00
(13 .00 0)
MAX.
N O TE S :
1 C O N F O R M S T O E IA-4 81 -1
2 IN C L U D ES F LA N G E D IS T O R T IO N @ O U T E R E D G E
3 D IM E N SIO N S M E AS U R E D @ H U B
4 C O N T R O L LIN G D IM EN S IO N : M E T R IC
1 4. 40 (.5 66 )
1 2. 40 (.4 48 )
3
18 .4 0 (.72 4)
MAX 3
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97