BSS84W P-Channel Enhancement Mode Field Effect Transistor FEATURES z Low On-Resistance。 z Low Gate Threshold Voltage. z Low Input Capacitance. z Fast Switching Speed. z Available in Lead Free Version. APPLICATIONS z P-channel enhancement mode effect transistor. SOT-323 ORDERING INFORMATION Type No. Marking BSS84W Package Code K84 SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source voltage -50 V VDGR Drain-Gate voltage -50 V VGSS Gate -Source voltage continuous ±20 V ID Drain current (Note1) continuous -130 mA PD Power Dissipation (Note1) 200 mW RθJA Thermal resistance,Junction-to-Ambient 625 ℃/W TJ, Tstg Junction and Storage Temperature -55 to +150 ℃ Note: Revision:20170701-P1 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on GALAXY Inc. suggested pad layoutdocument AP02001. ht t p : // www.lgesemi .c o m mail:[email protected] BSS84W P-Channel Enhancement Mode Field Effect Transistor Parameter Symbol Test conditions Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250μA MIN TYP MAX -50 -75 - UNIT V Gate Threshold Voltage Gate-body Leakage Forward Reverse Zero Gate Voltage Drain Current VGS(th) VDS=VGS, ID=-1mA -0.8 -1.6 -2.0 IGSS VDS=0V, VGS=20V VDS=0V, VGS=-20V - - 100 -100 VDS=-50V, VGS=0V, TJ = 25℃ - - -15 VDS=-50V, VGS=0V, TJ = 125℃ IDSS VDS=-25V, VGS=0V, TJ = 25℃ Forward transconductance gFS Static drain-Source on-resistance RDS(ON) Input capacitance CISS Output capacitance COSS Reverse transfer capacitance CRSS Turn-On Delay Time tD(ON) Turn-Off Delay Time tD(OFF) Revision:20170701-P1 ht t p : // VDS=-25V,ID=100mA VGS=-5.0V,ID=100mA VDS=-25V,VGS=0V,f=1.0MHz VDD = -30V, ID= -0.27A, VGS= -10V,RGEN= 50Ω www.lgesemi .c o m -60 nA μA - - -100 50 - - mS - 6 10 Ω - - 45 - - 25 - - 12 - 10 - ns - 18 - ns pF mail:[email protected] BSS84W P-Channel Enhancement Mode Field Effect Transistor TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Revision:20170701-P1 ht t p : // www.lgesemi .c o m mail:[email protected] BSS84W P-Channel Enhancement Mode Field Effect Transistor PACKAGE OUTLINE Plastic surface mounted package SOT-323 A E K B C D J G SOT-323 Dim Min Max A 2.00 2.20 B 1.15 1.35 C 0.95 Typical D 0.30 Typical E 0.25 0.40 G 1.2 1.4 H 0.02 0.10 H J K 0.10 Typical 2.20 2.40 All Dimensions in mm SOLDERING FOOTPRINT 0.65 0.65 1.90 0.90 0.70 PACKAGE Unit : mm INFORMATION Device Package Shipping BSS84W SOT-323 3000/Tape&Reel Revision:20170701-P1 ht t p : // www.lgesemi .c o m mail:[email protected]