BCX51,BCX52,BCX53 TRANSISTOR (PNP) SOT-89-3L FEATURES z NPN Complements to BCX54,BCX55,BCX56 z Low Voltage z High Current 1. BASE 2. COLLECTOR 3. EMITTER APPLICATIONS z Medium Power General Purposes z Driver Stages of Audio Amplifiers MARKING:BCX51:AA, BCX51-10:AC, BCX51-16:AD BCX52:AE, BCX52-10:AG, BCX52-16:AM BCX53:AH, BCX53-10:AK, BCX53-16:AL MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value BCX51 -45 BCX52 -60 BCX53 -100 BCX51 -45 BCX52 -60 BCX53 -80 Unit V V Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ VEBO RθJA １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BCX51,BCX52,BCX53 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage V(BR)CBO V(BR)CEO Test conditions IC=-100µA,IE=0 IC=-1mA,IB=0 Min BCX51 -45 BCX52 -60 BCX53 -100 BCX51 -45 BCX52 -60 BCX53 -80 Typ Max Unit V V V(BR)EBO IE=-100µA,IC=0 Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 µA hFE(1) VCE=-2V, IC=-5mA 63 hFE(2) VCE=-2V, IC=-150mA 63 hFE(3) VCE=-2V, IC=-0.5A 40 VCE(sat) IC=-0.5A,IB=-50mA -0.5 V Base -emitter voltage VBE VCE=-2V, IC=-0.5A -1 V Transition frequency fT Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage -5 VCE=-5V,IC=-10mA, f=100MHz V 250 50 MHz CLASSIFICATION OF hFE(2) RANK RANGE BCX51 BCX51-10 BCX51-16 BCX52 BCX52-10 BCX52-16 BCX53 BCX53-10 BCX53-16 63–250 63–160 100–250 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５