Product Brief Infineon’s New LTE Low Noise Amplifiers Almost Double Smartphone Data Rates Improving the user experience by improving smartphone data rates by up to 96% is the boast of Infineon for its LTE LNA (low noise amplifiers) and quad LNA banks. The BGA7x1N6 and BGM7xxxx4L12 families provide a low noise figure, the exact gain and high linearity needed to help smartphone designers overcome the challenges of LTE or 4G which allows for data rates up to 300Mbit/s – compared to 56Mbit/s in the latest UMTS (3G) release. However, the increasing complexity of the RF front end results in more RF components (e.g. switches, diplexers and dividers) and leads to increasing losses over the whole system and deterioration of the signal-to-noise ratio (SNR). The distance between antenna and the RF transceiver leads to additional line losses that also negatively affect SNR and therefore the data rate. The LNAs and LNA banks are based on the company’s Silicon Germanium Carbon (SiGe:C) chip technology and include built-in ESD protection of 2kV HBM. They are located in the diversity and main antenna path of the phone and push smartphone data rates’ limits 96% higher than in solutions without LNAs. High linearity assures optimal signal reception even in conditions of poorly isolated antenna and long line losses between antenna and transceiver. The typical sensitivity improvement of 3.4dB compared to systems without LNAs is achieved in devices with a package size 70% smaller (1.1 x 0.7mm2) than previously available LNAs and 61% smaller (1.9 x 1.1mm2) than previously available LNA banks. The products are also self-shielded to prevent parasitic interference and require only one external component per LNA. There are three LTE LNAs and seven quad LNA bank families to address the required band configurations for different world regions, each letter in the series denotes a different frequency band: L for the low, 0.7GHz to 1GHz band; M for mid, 1.7GHz to 2.2GHz band; and H for high, 2.3GHz to 2.7GHz band. They are shipped in RoHS-compliant TSNP-6-2 or TSLP 12-4 plastic packages. www.infineon.com/rfmmic Key Features High linearity Best-in-class noise figure Low current consumption Supply voltage: 1.5V to 3.3V Ultra small –– Single LNAs: TSNP-6-2 leadless package (footprint: 1.1 x 0.7mm2) –– Quad LNA banks: TSLP-12-4 leadless package (footprint: 1.1 x 1.9mm2) B7HF Silicon Germanium Carbon (SiGe:C) technology RF output internally matched to 50Ω Low external component count 2kV HBM ESD protection Pb-free (RoHS compliant) package Applications Smartphones Tablets Datacards M2M communication Product Brief Infineon’s New LTE Low Noise Amplifiers Almost Double Smartphone Data Rates LTE LNAs Diversity /Main Antenna BGA7H1N6 B7 B40 BGA7M1N6 B1 B2 B3 RFIC B5, 8 B17 B29 BGA7L1N6 Long Coax Lines High Insertion Loss RFIN LNA 1 RFIN LNA 2 L1 L2 11 C2 C2 = 0/2.8V C3 = 0/2.8V RFIN LNA 4 9 I2 10 C1 C1 = 0/2.8V RFIN LNA 3 8 I1 L3 O2 6 Biasing & Logic Circuitry © 2014 Infineon Technologies AG. All Rights Reserved. Visit us: www.infineon.com Order Number: B132-H9894-X-X-7600 Date: 04 / 2014 VCC 5 12 C3 O3 4 1 I3 O4 3 RFOUT LNA 1 RFOUT LNA 2 VCC = 2.8V C1 (optional) RFOUT LNA 3 RFOUT LNA 4 I4 2 L4 Ordering no. (SP numbers) BGM7LLHM4L12: BGM7LLHM4L12E6327XTSA1 BGM7MLLH4L12: BGM7MLLH4L12E6327XTSA1 BGM7MLLM4L12: BGM7MLLM4L12E6327XTSA1 BGM7LMHM4L12: BGM7LMHM4L12E6327XTSA1 BGM7HHMH4L12: BGM7HHMH4L12E6327XTSA1 Published by Infineon Technologies AG 85579 Neubiberg, Germany O1 7 BGA7L1N6: BGA7L1N6E6327XTSA1 BGA7M1N6: BGA7M1N6E6327XTSA1 BGA7H1N6: BGA7H1N6E6327XTSA1 Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/ or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 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