March 1999 FDV301N Digital FET , N-Channel General Description Features This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values. 25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 Ω @ VGS= 2.7 V RDS(ON) = 4 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors with one DMOS FET. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOIC-16 SOT-223 Mark:301 INVERTER APPLICATION Vcc D D OUT IN G Absolute Maximum Ratings Symbol G S GND S TA = 25oC unless other wise noted Parameter FDV301N Units VDSS, VCC Drain-Source Voltage, Power Supply Voltage 25 V VGSS, VI Gate-Source Voltage, VIN 8 V ID, IO Drain/Output Current 0.22 A - Continuous 0.5 PD Maximum Power Dissipation TJ,TSTG Operating and Storage Temperature Range ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) 0.35 W -55 to 150 °C 6.0 kV 357 °C/W THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient © 1999 Fairchild Semiconductor Corporation FDV301N Rev.F Inverter Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Max Units IO (off) Zero Input Voltage Output Current VCC = 20 V, VI = 0 V 1 µA VI (off) Input Voltage VCC = 5 V, IO = 10 µA 0.5 V VI (on) RO (on) Min VO = 0.3 V, IO = 0.005 A Output to Ground Resistance Typ 1 VI = 2.7 V, IO = 0.2 A V 4 5 Ω Typ Max Units Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min 25 OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V IGSS Gate - Body Leakage Current VGS = 8 V, VDS= 0 V V TJ = 55°C ON CHARACTERISTICS mV / oC 25 1 µA 10 µA 100 nA (Note) ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(ON) Static Drain-Source On-Resistance VGS = 2.7 V, ID = 0.2 A mV / oC -2.1 0.65 TJ =125°C VGS = 4.5 V, ID = 0.4 A 0.85 1.5 V 3.8 5 Ω 6.3 9 3.1 4 ID(ON) On-State Drain Current VGS = 2.7 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID= 0.4 A 0.2 0.2 A S VDS = 10 V, VGS = 0 V, f = 1.0 MHz 9.5 pF 6 pF 1.3 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω VDS = 5 V, ID = 0.2 A, VGS = 4.5 V 3.2 8 ns 6 15 ns 3.5 8 ns 3.5 8 ns 0.49 0.7 nC 0.22 nC 0.07 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.29 A (Note) 0.8 0.29 A 1.2 V Note: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDV301N Rev.F Typical Electrical Characteristics 1 .4 0 .5 GS = 4.5V 4 .0 3 .5 3 .0 0 .4 R DS(on ) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) V 2 .7 2 .5 0 .3 0 .2 2 .0 0 .1 1 .5 VGS = 2 .0V 1 .2 2 .5 2 .7 1 3 .0 3 .5 4 .0 0 .8 4 .5 0 .6 0 0 0 .5 V DS 1 1 .5 2 , DRAIN-SOURCE VOLTAGE (V) 2 .5 0 3 0 .4 0 .5 15 R DS(on) , ON-RESISTANCE (OHM) 1.8 R DS(ON) , NORMALIZED 0 .2 0 .3 I D , DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. DRAIN-SOURCE ON-RESISTANCE 0 .1 I D = 0.2A 1.6 VGS = 2.7 V 1.4 1.2 1 0.8 ID = 0.2A 12 25°C 125°C 9 6 3 0 0.6 -50 2 -25 0 25 50 75 100 125 2.5 150 TJ , JUNCTION TEMPERATURE (°C) Figure 3. On-Resistance Variation 0.5 V GS = 0V 0.2 I S, REVERSE DRAIN CURRENT (A) I D , DRAIN CURRENT (A) 125°C 0 .1 5 0 .1 0 .0 5 0 0 .5 1 V GS 1 .5 2 , GATE TO SOURCE VOLTAGE (V) 4 Gate-To-Source Voltage. T = -55°C J 25°C V DS = 5.0V 3.5 Figure 4. On Resistance Variation with with Temperature. 0 .2 3 V GS , GATE TO SOURCE VOLTAGE (V) 2 .5 TJ = 125°C 0.1 25°C 0.01 -55°C 0.001 0.0001 0.2 0.4 0.6 0.8 1 V , BODY DIODE FORW A RD VOLTAGE (V) 1.2 SD Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDV301N Rev.F Typical Electrical And Thermal Characteristics 30 VDS = 5V I D = 0.2A 20 10V 4 15V CAPACITANCE (pF) V GS , GATE-SOURCE VOLTAGE (V) 5 3 2 C iss 10 C oss 5 3 2 1 f = 1 MHz V GS = 0V 1 0 .1 0 0 0.1 0.2 0.3 0.4 0.5 C rss 0 .5 1 2 5 V , DRAIN TO SOURCE VOLTAGE (V) DS 0.6 10 25 Q g , GATE CHARGE (nC) Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 1 5 ( DS ON )L IM 1m IT 10 0m s 1s 0 .1 10 0 .0 5 VGS = 2.7V 0 .0 2 RθJ A = 357 °C/ W TA = 25°C s 3 2 DC SINGLE PULSE 0 .0 1 0 .5 1 V DS SINGLE PULSE R θJA =357° C/W T A = 25°C 4 s POWER (W) R 0 .2 D I , DRAIN CURRENT (A) 0 .5 1 2 5 10 15 , DRAI N -SOURCE VOLTAGE (V) 25 35 0 0.001 0.01 0.1 1 10 100 300 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 D = 0.5 0.2 0 .2 0.1 0 .1 0.05 0.02 0.01 0.005 R θJA (t) = r(t) * R θJA R θJA = 357 °C/W 0 .05 P(pk) 0 .02 0.01 t1 Single Pulse =P * R (t) A θJA Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 t2 TJ - T 0.001 0.01 0.1 t1 , TIM E (sec) 1 10 100 300 Figure 11. Transient Thermal Response Curve. FDV301N Rev.F TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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