BFQ19 NPN 5 GHz wideband transistor Rev. 03 — 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFQ19 PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is primarily intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers etc. PIN DESCRIPTION Code: FB 1 emitter 2 collector 3 base 3 The transistor features very low intermodulation distortion and high power gain. Due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. 2 1 Fig.1 SOT89. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. − MAX. UNIT VCEO collector-emitter voltage IC DC collector current − 100 mA Ptot total power dissipation up to Ts = 145 °C (note 1) − 1 W fT transition frequency Ic = 50 mA; VCE = 10 V; f = 500 MHz; Tj = 25 °C 5.5 − GHz Cre feedback capacitance Ic = 10 mA; VCE = 10 V; f = 1 MHz; Tamb = 25 °C 1.3 − pF F noise figure Ic = 50 mA; VCE = 10 V; Zs = opt.; f = 500 MHz; Tamb = 25 °C 3.3 − dB open base 15 V LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3.3 V IC DC collector current − 100 mA ICM peak collector current f > 1 MHz − 150 mA Ptot total power dissipation up to Ts = 145 °C (note 1) − 1 W Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C Note 1. Ts is the temperature at the soldering point of the collector tab. Rev. 03 - 28 September 2007 2 of 7 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point THERMAL RESISTANCE up to Ts = 145 °C (note 1) 30 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. − − 100 UNIT ICBO collector cut-off current IE = 0; VCB = 10 V hFE DC current gain IC = 70 mA; VCE = 10 V 25 80 − Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 1.6 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 5 − pF Cre feedback capacitance IC = 10 mA; VCE = 10 V; f = 1 MHz; Tamb = 25 °C − 1.3 − pF fT transition frequency IC = 70 mA; VCE = 10 V; f = 500 MHz 4.4 5.5 − GHz GUM maximum unilateral power gain (note 1) IC = 50 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C − 11.5 − dB IC = 50 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 °C − 7.5 − dB IC = 50 mA; VCE = 10 V; Zs = opt.; f = 500 MHz; Tamb = 25 °C − 3.3 − dB F noise figure nA Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 - dB. G UM = 10 log ------------------------------------------------------------2 2 1 – S 11 1 – S 22 Rev. 03 - 28 September 2007 3 of 7 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 MBB774 120 MBB830 5 handbook, halfpage handbook, halfpage Cc (pF) h FE 4 80 3 2 40 1 0 0 0 40 80 120 0 5 I C (mA) 10 15 20 V CB (V) VCE = 10 V; Tj = 25 °C. IE = ie = 0; f = 1 MHz; Tj = 25 °C. Fig.2 Fig.3 DC current gain as a function of collector current. Collector capacitance as a function of collector-base voltage. MBB773 8 handbook, halfpage fT (GHz) 6 4 2 0 0 40 80 I C (mA) 120 VCE = 10 V; f = 500 MHz; Tj = 25 °C. Fig.4 Transition frequency as a function of collector current. Rev. 03 - 28 September 2007 4 of 7 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M B bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC JEITA TO-243 SC-62 Rev. 03 - 28 September 2007 EUROPEAN PROJECTION ISSUE DATE 06-03-16 06-08-29 5 of 7 BFQ19 NXP Semiconductors NPN 5 GHz wideband transistor Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] Rev. 03 - 28 September 2007 6 of 7 BFQ19 NXP Semiconductors NPN 5 GHz wideband transistor Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BFQ19_N_3 20070928 Product data sheet - BFQ19_CNV_2 - - Modifications: BFQ19_CNV_2 • Fig. 1 and package outline updated 19950901 Product specification Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 28 September 2007 Document identifier: BFQ19_N_3