FQB5N90 / FQI5N90 N-Channel QFET® MOSFET 900 V, 5.4 A, 2.3 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • 5.4 A, 900 V, RDS(on) = 2.3 Ω (Max.)@ VGS = 10 V, ID = 2.7 A • Low Gate Charge (Typ. 31 nC) • Low Crss (Typ. 13 pF) • 100% Avalanche Tested • RoHS Compliant D D ! " G G S D S G! ! " I2-PAK D2-PAK " " ! S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) FQB5N90 / FQI5N90 900 Unit V 5.4 A 3.42 A 21.6 A IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 5.4 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 15.8 4.0 3.13 mJ V/ns W 158 1.27 -55 to +150 W W/°C °C 300 °C FQB5N90 / FQI5N90 Unit °C/W dv/dt PD - Pulsed (Note 1) (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ± 30 V 660 mJ Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case, Max. RθJA Thermal Resistance, Junction-to-Ambient * RθJA Thermal Resistance, Junction-to-Ambient, Max. 0.79 40 °C/W 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation FQB5N90 / FQI5N90 Rev. C0 www.fairchildsemi.com FQB5N90 / FQI5N90 N-Channel QFET® MOSFET April 2013 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit 900 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 1.0 IDSS IGSSF IGSSR VDS = 900 V, VGS = 0 V -- -- 10 µA VDS = 720 V, TC = 125°C -- -- 100 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V -- 1.8 2.3 Ω -- 5.6 -- S -- 1200 1550 pF -- 110 145 pF -- 13 17 pF -- 28 65 ns -- 65 140 ns -- 65 140 ns -- 50 110 ns -- 31 40 nC -- 7.2 -- nC -- 15 -- nC Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.7 A gFS Forward Transconductance VDS = 50 V, ID = 2.7 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 450 V, ID = 5.4 A, RG = 25 Ω (Note 4, 5) VDS = 720 V, ID = 5.4 A, VGS = 10 V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 5.4 A ISM -- -- 21.6 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 5.4 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 5.4 A, dIF / dt = 100 A/µs (Note 4) -- 610 -- ns -- 5.26 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 43mH, IAS = 5.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 5.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor Corporation FQB5N90 / FQI5N90 Rev. C0 www.fairchildsemi.com FQB5N90 / FQI5N90 N-Channel QFET® MOSFET Electrical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 0 10 1 10 ID, Drain Current [A] 1 10 -1 10 o 150 C o 0 25 C 10 o -55 C ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 50V 2. 250μs Pulse Test -2 -1 10 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 5 1 IDR , Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 10 VGS = 10V 4 VGS = 20V 3 2 ※ Note : TJ = 25℃ 0 10 ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test -1 1 0 3 6 9 12 15 18 10 0.2 0.4 0.6 0.8 1.0 1.2 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 2200 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2000 1800 Coss 1200 1000 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 800 Crss 600 400 VGS, Gate-Source Voltage [V] 1400 VDS = 180V 10 Ciss 1600 Capacitance [pF] 25℃ 150℃ VDS = 450V VDS = 720V 8 6 4 2 200 ※ Note : ID = 5.4 A 0 -1 10 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Corporation FQB5N90 / FQI5N90 Rev. C0 0 0 5 10 15 20 25 30 35 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.fairchildsemi.com FQB5N90 / FQI5N90 N-Channel QFET® MOSFET Typical Characteristics (Continued) 3.0 1.2 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 2.7 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 6 2 10 Operation in This Area is Limited by R DS(on) 5 10 µs 100 µs 1 1 ms ID, Drain Current [A] ID, Drain Current [A] 10 10 ms DC 0 10 -1 ※ Notes : 10 o 1. TC = 25 C 4 3 2 1 o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0 25 3 10 10 50 100 125 150 Figure 10. Maximum Drain Current vs. Case Temperature 0 D = 0 .5 ※ N o te s : 1 . Z θ J C ( t) = 0 .7 9 ℃ / W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .2 10 -1 0 .1 0 .0 5 PDM 0 .0 2 θ JC ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] 0 .0 1 t1 -2 10 t2 s i n g le p u ls e Z 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FQB5N90 / FQI5N90 Rev. C0 www.fairchildsemi.com FQB5N90 / FQI5N90 N-Channel QFET® MOSFET Typical Characteristics FQB5N90 / FQI5N90 N-Channel QFET® MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2008 Fairchild Semiconductor Corporation FQB5N90 / FQI5N90 Rev. C0 ID (t) VDS (t) VDD tp Time www.fairchildsemi.com FQB5N90 / FQI5N90 N-Channel QFET® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2008 Fairchild Semiconductor Corporation FQB5N90 / FQI5N90 Rev. C0 www.fairchildsemi.com FQB5N90 / FQI5N90 N-Channel QFET® MOSFET Mechanical Dimensions D2PAK Dimensions in Millimeters ©2008 Fairchild Semiconductor Corporation FQB5N90 / FQI5N90 Rev. C0 www.fairchildsemi.com FQB5N90 / FQI5N90 N-Channel QFET® MOSFET Mechanical Dimensions I2PAK Dimensions in Millimeters ©2008 Fairchild Semiconductor Corporation FQB5N90 / FQI5N90 Rev. C0 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2008 Fairchild Semiconductor Corporation FQB5N90 / FQI5N90 Rev. C0 www.fairchildsemi.com FQB5N90 / FQI5N90 N-Channel QFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ Sync-Lock™ FPS™ ® AccuPower™ F-PFS™ ®* ® ® ® AX-CAP * PowerTrench FRFET SM Global Power Resource PowerXS™ BitSiC™ TinyBoost™ Programmable Active Droop™ Green Bridge™ Build it Now™ TinyBuck™ QFET® Green FPS™ CorePLUS™ TinyCalc™ QS™ Green FPS™ e-Series™ CorePOWER™ TinyLogic® Quiet Series™ Gmax™ CROSSVOLT™ TINYOPTO™ RapidConfigure™ GTO™ CTL™ TinyPower™ IntelliMAX™ Current Transfer Logic™ ™ TinyPWM™ ® ISOPLANAR™ DEUXPEED TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC® EcoSPARK® SignalWise™ and Better™ TriFault Detect™ EfficentMax™ SmartMax™ MegaBuck™ TRUECURRENT®* ESBC™ SMART START™ MICROCOUPLER™ μSerDes™ Solutions for Your Success™ MicroFET™ ® SPM® MicroPak™ ® STEALTH™ MicroPak2™ Fairchild UHC® SuperFET® MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-3 MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-6 mWSaver™ FACT® VCX™ SuperSOT™-8 OptoHiT™ FAST® ® ® VisualMax™ SupreMOS OPTOLOGIC FastvCore™ ® VoltagePlus™ OPTOPLANAR SyncFET™ FETBench™ XS™