CET CEM2939 Dual enhancement mode field effect transistor (n and p channel) Datasheet

CEM2939
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
5
20V, 6.5A, RDS(ON) = 30mΩ @VGS = 4.5V.
RDS(ON) = 43mΩ @VGS = 2.5V.
-20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V.
RDS(ON) = 90mΩ @VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D1
D1
D2
D2
8
7
6
5
Lead free product is acquired.
Surface mount Package.
SO-8
1
ABSOLUTE MAXIMUM RATINGS
1
2
3
4
S1
G1
S2
G2
TA = 25 C unless otherwise noted
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
20
-20
Units
V
Gate-Source Voltage
VGS
±12
±12
V
ID
6.5
-4.8
A
IDM
20
-20
A
Parameter
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation
PD
2.0
W
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
RθJA
62.5
C/W
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Specification and data are subject to change without notice .
1
Rev 3. 2007.Feb
http://www.cetsemi.com
CEM2939
N-Channel Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
20
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 16V, VGS = 0V
1
µA
IGSSF
VGS = 12V, VDS = 0V
100
nA
IGSSR
VGS = -12V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
1.5
V
VGS = 4.5V, ID = 6.5A
0.55
25
30
mΩ
VGS = 2.5V, ID = 5.4A
35
43
mΩ
Dynamic Characteristics d
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 5V, ID = 6.5A
VDS = 8V, VGS = 0V,
f = 1.0 MHz
17
S
910
pF
230
pF
163
pF
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 15V, ID = 1A,
VGS = 4.5V, RGEN =6Ω
14
30
ns
10
20
ns
34
70
ns
Turn-Off Fall Time
tf
11
20
ns
Total Gate Charge
Qg
10
13
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 10V, ID =6.5A,
VGS = 4.5V
1.4
nC
3.2
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = 1.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
6.5
A
1.2
V
CEM2939
P-Channel Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250µA
-20
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = -16V, VGS = 0V
-1
µA
IGSSF
VGS = 12V, VDS = 0V
100
nA
IGSSR
VGS = -12V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
-1.5
V
VGS = -4.5V, ID = -3.2A
-0.55
43
55
mΩ
VGS = -2.5V, ID = -1.0A
64
90
mΩ
Dynamic Characteristics d
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = -5V, ID = -5.5A
VDS = -10V, VGS = 0V,
f = 1.0 MHz
10
S
1155
pF
205
pF
120
pF
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = -10V, ID = -4A,
VGS = -4.5V, RGEN = 3Ω
13.4
26.8
ns
8.4
16.8
ns
73.4
146.8
ns
Turn-Off Fall Time
tf
34.4
68.8
ns
Total Gate Charge
Qg
9.8
13
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = -10V, ID = -4A,
VGS = -4.5V
1.2
nC
2.7
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = -2.0A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
3
-4.8
A
-1.2
V
CEM2939
N-CHANNEL
20
20
25 C
16
ID, Drain Current (A)
ID, Drain Current (A)
VGS=4.5,3.5,3.0,2.5V
12
VGS=2.0V
8
4
0
0.0
1.0
1.5
1.5
2.0
2.5
3.0
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Ciss
800
600
400
Coss
Crss
0
0
2
4
6
8
10
2.2
1.9
ID=6.5A
VGS=4.5V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
IS, Source-drain current (A)
VDS=VGS
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
-55 C
VDS, Drain-to-Source Voltage (V)
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
TJ=125 C
4
1.0
200
VTH, Normalized
Gate-Source Threshold Voltage
8
2.0
1000
1.2
5
12
0
0.5
1200
1.3
16
VGS=0V
10
10
10
-25
0
25
50
75
100
125
150
1
0
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4
CEM2939
P-CHANNEL
15
15
25 C
-VGS=2.5V
12
-ID, Drain Current (A)
-ID, Drain Current (A)
-VGS=4.5,-4.0,-3.5V
9
-VGS=2V
6
3
0
0
0.5
1
1.5
2
1
2
3
4
5
Figure 8. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
800
Coss
400
Crss
2
4
6
8
10
12
2.2
1.9
ID=-3.2A
VGS=-4.5V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 9. Capacitance
Figure 10. On-Resistance Variation
with Temperature
VDS=VGS
-IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
0
Figure 7. Output Characteristics
Ciss
ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
-55 C
TJ=125 C
-VGS, Gate-to-Source Voltage (V)
1200
1.2
3
-VDS, Drain-to-Source Voltage (V)
1600
1.3
6
0
2000
0
9
2.5
2400
0
12
-25
0
25
50
75
100
125
150
VGS=0V
10
1
10
0
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 11. Gate Threshold Variation
with Temperature
Figure 12. Body Diode Forward Voltage
Variation with Source Current
5
CEM2939
10
5 V =10V
DS
ID=6.5A
4
3
2
1
0
0
2
4
6
8
10ms
10
0
10
-1
-2
1s
DC
TA=25 C
TJ=150 C
Single Pulse
-2
10
-1
10
0
10
1
VDS, Drain-Source Voltage (V)
Figure 13. Gate Charge
Figure 14. Maximum Safe
Operating Area
10
2
10
1
10
2
10
2
RDS(ON)Limit
4
3
2
1
2.5
5
100ms
Qg, Total Gate Charge (nC)
-ID, Drain Current (A)
-VGS, Gate to Source Voltage (V)
1
10
5 V =-10V
DS
ID=-4A
0
10
10
10
P-CHANNEL
0
2
RDS(ON)Limit
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
N-CHANNEL
5
7.5
10
0
10
-1
10
10
10ms
100ms
-2
10
1s
DC
TA=25 C
TJ=150 C
Single Pulse
-2
10
-1
10
0
10
1
Qg, Total Gate Charge (nC)
-VDS, Drain-Source Voltage (V)
Figure 15. Gate Charge
Figure 16. Maximum Safe
Operating Area
6
CEM2939
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 18. Switching Waveforms
Figure 17. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1
0.05
10
PDM
0.02
0.01
-2
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Figure 19. Normalized Thermal Transient Impedance Curve
7
10
1
10
2
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