APT6013B2LL
APT6013LLL
600V 43A
POWER MOS 7
R
MOSFET
B2LL
T-MAX™
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
0.130Ω
TO-264
LLL
D
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
G
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT6013B2LL_LLL
UNIT
600
Volts
Drain-Source Voltage
43
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
565
Watts
Linear Derating Factor
4.52
W/°C
PD
TJ,TSTG
1
172
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
43
(Repetitive and Non-Repetitive)
1
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 21.5A)
TYP
MAX
Volts
0.130
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
9-2004
Characteristic / Test Conditions
050-7053 Rev C
Symbol
APT6013B2LL_LLL
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
MIN
TYP
C iss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
1060
Crss
Reverse Transfer Capacitance
f = 1 MHz
70
VGS = 10V
130
VDD = 300V
25
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
ID = 43A @ 25°C
tf
14
VDD = 300V
RG = 0.6Ω
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
8
INDUCTIVE SWITCHING @ 25°C
6
635
VDD = 400V, VGS = 15V
6
ns
27
ID = 43A @ 25°C
Turn-off Delay Time
nC
11
VGS = 15V
Rise Time
td(off)
pF
40
RESISTIVE SWITCHING
Turn-on Delay Time
tr
UNIT
5630
VGS = 0V
3
MAX
ID = 43A, RG = 5Ω
585
INDUCTIVE SWITCHING @ 125°C
1030
VDD = 400V, VGS = 15V
ID = 43A, RG = 5Ω
µJ
695
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
43
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -43A, dl S/dt = 100A/µs)
700
ns
Q rr
Reverse Recovery Charge (IS = -43A, dl S/dt = 100A/µs)
14.7
µC
dv/
dt
Peak Diode Recovery
dv/
172
(Body Diode)
1.3
(VGS = 0V, IS = -43A)
dt
Amps
Volts
8
V/ns
MAX
UNIT
5
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.22
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.70mH, RG = 25Ω, Peak IL = 43A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID43A di/dt ≤ 700A/µs VR ≤ 600V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.9
0.7
0.15
0.5
Note:
0.10
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7053 Rev C
9-2004
0.25
0.20
0.3
0
t1
t2
0.05
0.1
0.05
10-5
SINGLE PULSE
10-4
°C/W
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1
Typical Performance Curves
APT6013B2LL_LLL
120
VGS =15 &10V
0.014
Power
(watts)
0.076
0.13
0.006F
0.019F
0.278F
Case temperature. (°C)
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. (°C)
100
8V
80
7V
60
6.5V
40
6V
20
5.5V
5V
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
120
100
80
60
40
TJ = +125°C
20
0
TJ = +25°C
TJ = -55°C
0 1
2 3
4 5 6
7 8
9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I
D
V
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
35
GS
NORMALIZED TO
= 10V @ I = 21.5A
D
VGS=10V
1.10
1.05
VGS=20V
1.00
0.95
0.90
0
20
40
60
80
100
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 21.5A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
40
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
1.15
1.15
45
0.0
-50
V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
9-2004
140
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.2
050-7053 Rev C
ID, DRAIN CURRENT (AMPERES)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
160
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10,000
D
= 43A
12
VDS= 120V
8
VDS= 300V
VDS= 480V
4
0
40
80
120
160
200
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
0
100
TJ =+150°C
TJ =+25°C
10
V
DD
G
100
= 400V
= 5Ω
R
DD
R
G
= 400V
T = 125°C
J
80
= 5Ω
tr and tf (ns)
V
60
T = 125°C
J
L = 100µH
40
tf
60
40
20
0
10
2000
20
0
10
40
50
60
70
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
1600
tr
td(on)
30
40
50
60
70
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
3000
= 400V
I
2500
T = 125°C
J
L = 100µH
EON includes
diode reverse recovery
1200
800
Eon
Eoff
400
0
10
20
V
= 5Ω
SWITCHING ENERGY (µJ)
td(on) and td(off) (ns)
Crss
L = 100µH
20
Eon and Eoff (µJ)
100
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
80
9-2004
Coss
1,000
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
td(off)
050-7053 Rev C
Ciss
10mS
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
C, CAPACITANCE (pF)
100
APT6013B2LL_LLL
20,000
OPERATION HERE
LIMITED BY RDS (ON)
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
172
DD
D
30
= 400V
= 43A
T = 125°C
J
L = 100µH
EON includes
2000
Eoff
diode reverse recovery
1500
Eon
1000
500
20
30
40
50
60
70
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT6013B2LL_LLL
90%
10%
Gate Voltage
Gate Voltage
TJ125°C
td(off)
Drain Current
90%
T 125°C
J
Drain Voltage
90%
td(on)
tf
tr
5%
10%
5%
10%
0
Drain Voltage
Switching Energy
Drain Current
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
V DS
ID
V DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
9-2004
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7053 Rev C
Drain
Drain
20.80 (.819)
21.46 (.845)