MITSUBISHI IGBT MODULES CM300DU-24H HIGH POWER SWITCHING USE INSULATED TYPE A B TC Measured Point K(4 - Mounting Holes) E H D J C F CM H R 3 - M6 NUTS R Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. G 0.110 - 0.5 Tab M P M P N M L Q G2 Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches A 4.33 B 3.66±0.01 C 3.15 D 2.44±0.01 E 0.55 Millimeters Dimensions Inches J 93.0±0.25 K 0.26 Dia. L 1.14 +0.04/-0.02 M 0.71 18.0 N 0.33 8.5 80.0 62.0±0.25 14.0 0.59 Millimeters 110.0 15.0 6.5 Dia. 29 +1.0/-0.5 F 0.86 21.75 P 0.28 7.0 G 0.94 24.0 Q 0.83 21.0 H 0.24 6.0 R 0.98 25.0 Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM300DU-24H is a 1200V (VCES), 300 Ampere Dual IGBT Module. Type Current Rating Amperes VCES Volts (x 50) CM 300 24 Sep.1998 MITSUBISHI IGBT MODULES CM300DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM300DU-24H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 300 Amperes ICM 600* Amperes IE 300 Amperes Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Peak Emitter Current** IEM 600* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 1130 Watts Mounting Torque, M6 Main Terminal – 3.5~4.5 N·m Mounting Torque, M6 Mounting – 3.5~4.5 N·m – 580 Grams Viso 2500 Vrms Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA 4.5 6 7.5 Volts – 2.9 3.7 Volts 2.85 – Volts – nC Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V Collector-Emitter Saturation Voltage VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C IC = 300A, VGE = 15V, Tj = 125°C – Total Gate Charge QG VCC = 600V, IC = 300A, VGE = 15V – 1125 Emitter-Collector Voltage* VEC IE = 300A, VGE = 0V – – 3.2 Min. Typ. Max. – – 45 nF – – 15 nF – – 9 nF Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Units Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) VCC = 600V, IC = 300A, – – 200 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 300 ns Switch Turn-off Delay Time Times Fall Time VCE = 10V, VGE = 0V td(off) RG = 1.0Ω, Resistive – – 350 ns tf Load Switching Operation – – 350 ns Diode Reverse Recovery Time trr IE = 300A, diE/dt = -600A/µs – – 300 ns Diode Reverse Recovery Charge Qrr IE = 300A, diE/dt = -600A/µs – 1.65 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – 0.11 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module – – 0.18 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.010 – °C/W Contact Thermal Resistance Max. Units Sep.1998 MITSUBISHI IGBT MODULES CM300DU-24H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) 600 15 12 VGE = 20V 480 11 360 10 240 9 120 8 0 2 4 6 8 360 240 120 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 10 4 8 12 16 20 0 120 240 360 480 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 10 102 IC = 600A IC = 300A 6 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) 8 102 Cies 101 Coes 100 Cres IC = 120A VGE = 0V 101 1.0 0 8 12 16 20 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 2.5 3.0 REVERSE RECOVERY TIME, trr, (ns) td(off) 102 VCC = 600V VGE = ±15V RG = 1.0 Ω Tj = 125°C tr 102 COLLECTOR CURRENT, IC, (AMPERES) 10-1 10-1 3.5 103 di/dt = -600A/µsec Tj = 25°C Irr 102 101 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE 102 trr 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 tf td(on) 101 101 2.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 1.5 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 4 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 0 600 Tj = 25°C Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 480 0 0 SWITCHING TIME, (ns) 5 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 600 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 300A 16 VCC = 400V VCC = 600V 12 8 4 0 0 400 800 1200 1600 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM300DU-24H TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.11°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.18°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.1998