BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-emitter voltage (RBE = 100 Ω) BD245B Collector-emitter voltage (IC = 30 mA) VCER 115 45 V CEO Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. 60 80 V V 100 BD245C Continuous collector current 90 BD245C BD245B Emitter-base voltage 70 BD245 BD245A UNIT 55 BD245 BD245A VALUE VEBO 5 V IC 10 A ICM 15 A IB 3 A Ptot 80 W Ptot 3 W ½LIC2 62.5 mJ °C Tj -65 to +150 Tstg -65 to +150 °C TL 250 °C This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 (see Note 5) BD245 45 BD245A 60 BD245B 80 BD245C 100 TYP MAX V VCE = 55 V VBE = 0 BD245 0.4 Collector-emitter VCE = 70 V VBE = 0 BD245A 0.4 cut-off current VCE = 90 V VBE = 0 BD245B 0.4 VCE = 115 V VBE = 0 BD245C 0.4 Collector cut-off VCE = 30 V IB = 0 BD245/245A 0.7 current VCE = 60 V IB = 0 BD245B/245C 0.7 VEB = 5V IC = 0 Emitter cut-off current Forward current transfer ratio 1 VCE = 4V IC = 1A VCE = 4V IC = 3A VCE = 4V IC = 10 A Collector-emitter IB = 0.3 A IC = saturation voltage IB = 2.5 A IC = 10 A 1 (see Notes 5 and 6) 4V IC = 4V IC = 10 A VCE = 10 V IC = 0.5 A f = 1 kHz 20 VCE = 10 V IC = 0.5 A f = 1 MHz 3 3A V 4 VCE = current transfer ratio mA 4 3A VCE = Small signal forward mA 20 voltage current transfer ratio mA 40 (see Notes 5 and 6) Base-emitter Small signal forward UNIT 1.6 (see Notes 5 and 6) 3 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC Junction to case thermal resistance RθJA Junction to free air thermal resistance MIN TYP MAX UNIT 1.56 °C/W 42 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = 1 A IB(on) = 0.1 A IB(off) = -0.1 A toff Turn-off time VBE(off) = -3.7 V RL = 20 Ω tp = 20 µs, dc ≤ 2% 0.3 µs 1 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS633AG VCE = 4 V TC = 25°C tp = 300 µs, duty cycle < 2% 100 10 1·0 0·1 1·0 IC = IC = IC = IC = 1A 3A 6A 10 A 1·0 0·1 0·01 0·01 10 TCS633AB 10 VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - DC Current Gain 1000 COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT IC - Collector Current - A 0·1 1·0 10 IB - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1·8 TCS633AC VBE - Base-Emitter Voltage - V VCE = 4 V TC = 25°C 1·6 1·4 1·2 1·0 0·8 0·6 0·1 1 10 IC - Collector Current - A Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS633AC t p = 300 µs, d = 0.1 = 10% t p = 1 ms, d = 0.1 = 10% t p = 10 ms, d = 0.1 = 10% DC Operation 10 1·0 0·1 BD245 BD245A BD245B BD245C 0·01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS633AA Ptot - Maximum Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 15,2 14,7 ø 4,1 4,0 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 2 3 1,30 0,78 0,50 1,10 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. MDXXAW 5