IRF9620S, SiHF9620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 1.5 22 Qgs (nC) 12 Qgd (nC) 10 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • P-Channel • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC D P-Channel MOSFET The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free D2PAK (TO-263) SiHF9620S-GE3 IRF9620SPbF SiHF9620S-E3 D2PAK (TO-263) SiHF9620STRL-GE3a IRF9620STRLPbFa SiHF9620STL-E3a Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL LIMIT VDS VGS - 200 ± 20 - 3.5 - 2.0 - 14 0.32 0.025 - 14 40 3.0 - 5.0 - 55 to + 150 300d ID IDM Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Inductive Current, Clamp ILM Maximum Power Dissipation TC = 25 °C PD Maximum Power Dissipation (PCB Mount)e TA = 25 °C dV/dt Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5). b. Not Applicable c. ISD - 3.5 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. When mounted on 1” square PCB (FR-4 or G-10 material). UNIT V A W/°C A W V/ns °C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91083 S11-1051-Rev. C, 30-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9620S, SiHF9620S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient RthJA - - 62 Maximum Junction-to-Ambient (PCB Mount)a RthJA - - 40 Maximum Junction-to-Case (Drain) RthJC - - 3.1 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0, ID = - 250 μA - 200 - - V VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.22 - V/°C VGS(th) VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs VDS = - 200 V, VGS = 0 V - - - 100 VDS = - 160 V, VGS = 0 V, TJ = 125 °C - - - 500 ID = - 1.5 Ab VGS = - 10 V VDS = - 50 V, ID = - 1.5 A μA - - 1.5 1.0 - - S - 350 - Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 10 - 100 - - 30 - - - 22 - - 12 pF Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - - 10 Turn-On Delay Time td(on) - 15 - tr - 25 - - 20 - - 15 - - 4.5 - - 7.5 - - - - 3.5 S - - - 14 Vb - - - 7.0 V - 300 450 ns - 1.9 2.9 nC Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance td(off) VGS = - 10 V ID = - 4.0 A, VDS = - 160 V, see fig. 11 and 18b VDD = - 100 V, ID = - 1.5 A, RG = 50 , RD = 67 , see fig. 17b tf LD LS Between lead, 6 mm (0.25") from package and center of die contact nC ns D nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = - 3.5 A, VGS = 0 TJ = 25 °C, IF = - 3.5 A, dI/dt = 100 A/μsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5). b. Pulse width 300 μs; duty cycle 2 %. www.vishay.com 2 Document Number: 91083 S11-1051-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9620S, SiHF9620S Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) -5 -5 80 µs Pulse Test -4 ID, Drain Current (A) ID, Drain Current (A) VGS = - 10, - 9, - 8, - 7 V -6V -3 -2 -5V VGS = - 10, - 9, - 8, - 7 V -4 -3 -6V -2 -5V -1 -1 80 µs Pulse Test -4V -4V 0 0 - 20 - 10 0 - 30 - 40 - 50 VDS, Drain-to-Source Voltage (V) 91083_01 Negative ID, Drain Current (A) ID, Drain Current (A) 102 TJ = 25 °C TJ = 125 °C -3 -2 -1 80 µs Pulse Test VDS > ID(on) x RDS(on) max. 0 -4 -6 -8 10 100 µs 5 1 ms 2 1 10 ms 5 TC = 25 °C TJ = 150 °C Single Pulse 2 2 1 5 10 2 5 102 2 5 103 Negative VDS, Drain-to-Source Voltage (V) 91083_04 Fig. 2 - Typical Transfer Characteristics ZthJC(t)/RthJC, Normalized Effective Transient Thermal Impedence (Per Unit) -5 2 - 10 VGS, Gate-to-Source Voltage (V) 91083_02 -4 Operation in this area limited by RDS(on) 5 0.1 -2 0 -3 Fig. 3 - Typical Saturation Characteristics TJ = - 55 °C -4 -2 VDS, Drain-to-Source Voltage (V) 91083_03 Fig. 1 - Typical Output Characteristics -5 -1 0 Fig. 4 - Maximum Safe Operating Area 2.0 1.0 0.5 0.2 0.1 D = 0.5 PDM 0.2 0.1 t1 0.05 0.05 t2 0.02 0.01 Single Pulse (Transient Thermal Impedence) 0.02 0.01 10-5 Notes: 1. Duty Factor, D = t1/t2 2. Per Unit Base = RthJC = 3.12 °C/W 3. TJM - TC = PDM ZthJC(t) 2 5 10-4 2 5 10-3 2 5 10-2 2 5 0.1 2 5 1.0 2 5 10 t1, Square Wave Pulse Duration (s) 91083_05 Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration Document Number: 91083 S11-1051-Rev. C, 30-May-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9620S, SiHF9620S RDS(on), Drain-to-Source On Resistance (Normalized) Vishay Siliconix 4.0 gfs,Transconductance (S) 80 µs Pulse Test VDS > ID(on) x RDS(on) max. 3.2 TJ = - 55 °C 2.4 TJ = 25 °C TJ = 125 °C 1.6 0.8 0.0 0 -1 -2 -3 -4 -5 ID, Drain Current (A) 91083_06 ID = - 1.0 A VGS = - 10 V 2.0 1.5 1.0 0.5 0.0 - 40 0 40 80 120 160 TJ, Junction Temperature (°C) 91083_09 Fig. 6 - Typical Transconductance vs. Drain Current Fig. 9 - Normalized On-Resistance vs. Temperature 500 - 20 IDR, Reverse Drain Current (A) 2.5 - 10 Ciss C, Capacitance (pF) 400 -5 -2 TJ = 150 °C - 1.0 TJ = 25 °C - 0.5 300 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd C ,C Coss = Cds + gs gd Cgs + Cgd Coss 200 ≈ Cgs + Cgd Crss 100 - 0.2 0 - 3.2 - 4.4 - 5.6 - 6.8 VSD, Source-to-Drain Voltage (V) 91083_07 BVDSS, Drain-to-Source Breakdown Voltage (Normalized) 1.25 1.15 1.05 0.95 0.85 0 40 80 120 160 TJ, Junction Temperature (°C) 91083_08 Fig. 8 - Breakdown Voltage vs. Temperature www.vishay.com 4 - 20 - 30 - 40 - 50 VDS, Drain-to-Source Voltage (V) 91083_10 Fig. 7 - Typical Source-Drain Diode Forward Voltage 0.75 - 40 - 10 0 - 8.0 Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage Negative VGS, Gate-to-Source Voltage (V) - 0.1 - 2.0 91083_11 20 ID = - 3.5 A VDS = - 100 V VDS = - 60 V 16 VDS = - 40 V 12 8 4 For test circuit see figure 18 0 0 4 8 12 16 20 QG, Total Gate Charge (nC) Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91083 S11-1051-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9620S, SiHF9620S Vishay Siliconix RDS(on), Drain-to-Source On Resistance (Ω) 5 L RDS(on) measured with current pulse of 2.0 µs duration. Initial TJ = 25 °C. (Heating effect of 2.0 µs pulse is minimal.) 4 Vary tp to obtain required IL VGS = - 10 V 3 VGS = - 10 V VDS V DD tp EC 0.05 Ω IL 2 VDD = 0.5 VDS VGS = - 20 V EC = 0.75 VDS Fig. 15 - Clamped Inductive Test Circuit 1 0 0 -4 -8 - 12 - 16 VDD - 20 ID, Drain Current (A) 91083_12 IL Fig. 12 - Typical On-Resistance vs. Drain Current tp VDS EC 3.5 Negative ID, Drain Current (A) + D.U.T. Fig. 16 - Clamped Inductive Waveforms 3.0 2.5 RD 2.0 VDS 1.5 VGS D.U.T. RG 1.0 0.5 +VDD - 10 V 0.0 25 50 75 100 125 150 TC, Case Temperature (°C) 91083_13 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 17a - Switching Time Test Circuit Fig. 13 - Maximum Drain Current vs. Case Temperature PD, Power Dissipation (W) td(on) 40 VGS 35 10 % tr td(off) tf 30 25 20 90 % VDS 15 Fig. 17b - Switching Time Waveforms 10 5 0 0 91083_14 20 40 60 80 100 120 140 TC, Case Temperature (°C) Fig. 14 - Power vs. Temperature Derating Curve Document Number: 91083 S11-1051-Rev. C, 30-May-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9620S, SiHF9620S Vishay Siliconix Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 0.2 µF 12 V 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 18a - Basic Gate Charge Waveform Fig. 18b - Gate Charge Test Circuit Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - - Rg • dV/dt controlled by Rg • ISD controlled by duty factor “D” • D.U.T. - device under test + - VDD Note • Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = - 5 V for logic level and - 3 V drive devices Fig. 19 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91083. www.vishay.com 6 Document Number: 91083 S11-1051-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. MAX. View A - A INCHES MIN. 4 E1 Section B - B and C - C Scale: none MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 6.22 - 0.245 - b 0.51 0.99 0.020 0.039 E1 b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 2.54 BSC 0.100 BSC c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 0.25 BSC 4.78 5.28 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. Document Number: 91364 Revision: 15-Sep-08 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 91000