ON NTB5405N Power mosfet Datasheet

NTB5405N, NVB5405N
Power MOSFET
40 V, 116 A, Single N−Channel, D2PAK
Features
•
•
•
•
•
Low RDS(on)
High Current Capability
Low Gate Charge
AEC−Q101 Qualified and PPAP Capable − NVB5405N
These Devices are Pb−Free and are RoHS Compliant
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Applications
V(BR)DSS
RDS(ON) TYP
ID MAX
(Note 1)
40 V
4.9 mΩ @ 10 V
116 A
• Electronic Brake Systems
• Electronic Power Steering
• Bridge Circuits
N−Channel
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
116
A
Continuous Drain
Current − RJC
Steady
State
Power Dissipation −
RJC
Steady
State
Continuous Drain
Current − RJA (Note 1)
Steady
State
Power Dissipation −
RJA (Note 1)
Steady
State
Pulsed Drain Current
TC = 25°C
TC = 100°C
150
W
TA = 25°C
ID
16.5
A
TA = 100°C
ID
11.6
TA = 25°C
tp = 10 s
Operating Junction and Storage Temperature
Source Current (Body Diode) Pulsed
Single Pulse Drain−to Source Avalanche
Energy − (VDD = 50 V, VGS = 10 V, IPK = 40 A,
L = 1 mH, RG = 25 )
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
PD
3.0
W
IDM
280
A
TJ,
TSTG
−55 to
175
°C
IS
75
A
EAS
800
mJ
TL
260
°C
Symbol
Max
Unit
Junction−to−Case (Drain)
RθJC
1.0
°C/W
Junction−to−Ambient (Note 1)
RθJA
50
°C/W
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
October, 2011 − Rev. 5
1
2
NTB5405NG
AYWW
D2PAK
CASE 418B
STYLE 2
1
NTB5405N
G
A
Y
WW
= Specific Device Code
= Pb−Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
THERMAL RESISTANCE RATINGS
© Semiconductor Components Industries, LLC, 2011
MARKING
DIAGRAM
3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Parameter
S
82
PD
TC = 25°C
G
1
Package
Shipping†
NTB5405NG
Device
D2PAK
(Pb−Free)
50 Units / Rail
NTB5405NT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
NVB5405NT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTB5405N/D
NTB5405N, NVB5405N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 A
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
V
39
IDSS
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25°C
1.0
TJ = 100°C
10
IGSS
VDS = 0 V, VGS = ±30 V
VGS(TH)
VGS = VDS, ID = 250 A
±100
A
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
1.5
3.5
−7.0
RDS(on)
gFS
V
mV/°C
VGS = 10 V, ID = 40 A
4.9
5.8
VGS = 5.0 V, ID = 15 A
7.0
8.0
VGS = 10 V, ID = 15 A
32
m
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VGS = 0 V, f = 1.0 MHz,
VDS = 32 V
2700
4000
700
1400
300
600
Total Gate Charge
QG(TOT)
88
Threshold Gate Charge
QG(TH)
3.25
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
VGS = 10 V, VDS = 32 V,
ID = 40 A
pF
nC
9.5
37
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
ns
8.5
VGS = 10 V, VDD = 32 V,
ID = 40 A, RG = 2.5 tf
52
55
70
SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
ns
19
VGS = 5 V, VDD = 20 V,
ID = 20 A, RG = 2.5 tf
153
32
42
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.82
TJ = 100°C
TBD
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 20 A
66
VGS = 0 V, dISD/dt = 100 A/s,
IS = 20 A
QRR
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2
V
ns
35
31
113
2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
1.1
nC
NTB5405N, NVB5405N
TYPICAL PERFORMANCE CURVES
125
TJ = 25°C
VGS = 6 V to 10 V
VDS ≥ 10 V
175
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
200
5.5 V
150
5V
125
4.5 V
100
75
4V
50
25
3.5 V
0
100
75
50
TJ = 125°C
25
TJ = 25°C
TJ = −55°C
0
0
1
3
2
5
4
6
7
9
8
10
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
2
3
5
6
7
4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.01
ID = 40 A
TJ = 25°C
0.009
0.008
0.007
0.006
0.005
0.004
0.003
3
5
4
7
6
9
8
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
Figure 1. On−Region Characteristics
0.01
TJ = 25°C
0.009
0.008
0.007
VGS = 5 V
0.006
0.005
VGS = 10 V
0.004
0.003
0.002
15
25
35
55
65
75
85
95
105 115
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
100000
2
VGS = 0 V
ID = 40 A
VGS = 10 V
10000
1.6
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
45
ID, DRAIN CURRENT (AMPS)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
1.8
8
1.4
1.2
1
TJ = 175°C
1000
TJ = 100°C
100
0.8
0.6
−50
−25
0
25
50
75
100
150
125
175
10
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTB5405N, NVB5405N
TYPICAL PERFORMANCE CURVES
TJ = 25°C
7000
C, CAPACITANCE (pF)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VDS = 0 V VGS = 0 V
Ciss
6000
5000
Crss
4000
Ciss
3000
2000
Coss
1000
Crss
0
10
VGS
0
10
VDS
30
20
12
36
QT
10
8
24
18
6
QGS
QGD
4
12
2
ID = 40 A
TJ = 25°C
0
0
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
0
90
tf
100
td(off)
tr
td(on)
10
1
10
RG, GATE RESISTANCE (OHMS)
VGS = 0 V
TJ = 25°C
35
30
25
20
15
10
5
0
0.4
100
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
0.5
0.7
0.6
0.8
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1
Figure 10. Diode Forward Voltage vs. Current
800
1000
100 s
10 s
10 ms
100
dc
10
VGS = 20 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.1
1
ID = 40 A
700
AVALANCHE ENERGY (mJ)
1 ms
ID, DRAIN CURRENT (A)
80
40
VDS = 32 V
ID = 40 A
VGS = 10 V
1
50
70
30
20
40
60
QG, TOTAL GATE CHARGE (nC)
6
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
1
30
VGS
VDS
40
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
8000
10
600
500
400
300
200
100
0
25
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
175
NTB5405N, NVB5405N
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
TYPICAL PERFORMANCE CURVES
1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
RJC(t) = r(t) RJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RJC(t)
0.01
0.00001
0.0001
0.001
0.01
t, TIME (s)
Figure 13. Thermal Response
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5
0.1
1.0
10
NTB5405N, NVB5405N
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
V
W
−B−
4
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
1
2
S
3
−T−
SEATING
PLANE
K
W
J
G
D
H
3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
M
T B
M
N
R
M
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
P
U
L
L
L
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
NTB5405N, NVB5405N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTB5405N/D