TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/350 DEVICES LEVELS 2N3867 2N3868 JAN JANTX JANTXV JANS 2N3867S 2N3868S ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N3867 2N3868 Unit Collector-Base Voltage VCBO 40 60 Vdc Collector-Emitter Voltage VCEO 40 60 Vdc Emitter-Base Voltage VEBO 4.0 Vdc IC 3.0 mAdc PT 1.0 W/°C TJ, Tstg -65 to +200 °C Symbol Max. Unit RθJA 175 °C/mW Collector Current Total Power Dissipation @ TA = +25°C (1) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Ambient TO-5 * 2N3867, 2N3868 Note: * Electrical characteristics for “S” suffix devices are identical to the “non S” corresponding devices. 1/ Derate linearly 5.71mW/°C for TA > +25°C 2/ Derate linearly 57.1mW/°C for TC > +25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Current 2N3867, S IC = 10μAdc 2N3868, S Collector-Base Cutoff Current VCB = 40Vdc 2N3867, S VCB = 60Vdc 2N3868, S Emitter-Base Cutoff Current VEB = 4.0Vdc Collector-Emitter Cutoff Current VCE = 40Vdc 2N3867, S VCE = 60Vdc 2N3868, S 2N3867, S VCE = 40Vdc, TA = +150°C 2N3868, S VCE = 60Vdc, TA = +150°C T4-LDS-0170 Rev. 1 (101121) Symbol Min. V(BR)CEO 40 60 Max. Unit Vdc ICBO 100 µAdc IEBO 100 µAdc ICEX 1.0 1.0 50 50 TO-39 * (TP-205AD) 2N3867S, 2N3868S µAdc Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions ON CHARACTERTICS Symbol Min. Max. Unit (2) Forward-Current Transfer Ratio IC = 500mAdc, VCE = 1.0Vdc 2N3867, S 2N3868, S 50 35 IC = 1.5Adc, VCE = 2.0Vdc 2N3867, S 2N3868, S 40 30 IC = 2.5Adc, VCE = 3.0Vdc 2N3867, S 2N3868, S IC = 3.0Adc, VCE = 5.0Vdc 2N3867, S 2N3868, S 20 20 IC = 500mAdc, VCE = 1.0Vdc, TA = -55°C 2N3867, S 2N3868, S 25 17 Collector-Emitter Saturation Voltage IC = 500mAdc, IB = 50mAdc IC = 1.5Adc, IB = 150mAdc IC = 2.5Adc, IB = 250mAdc hFE 200 150 25 20 VCE(sat) 0.5 0.75 1.5 Vdc VBE(sat) 0.9 0.85 1.0 1.4 1.4 2.0 Vdc Symbol Min. Max. Unit |hfe| 3 12 kΩ Base-Emitter Saturation Voltage IC = 500mA, IB = 50mAdc IC = 1.5A, IB = 150mAdc 2N3867, S 2N3868, S IC = 2.5A, IB = 250mAdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal Short Circuit Forward Current Transfer Ratio IC = 100mAdc, VCE = 5.0Vdc, f = 20MHz Output Capacitance VCB = 10Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz Cobo 120 pF Iutput Capacitance VEB = 3.0Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz Cibo 800 pF (2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0% T4-LDS-0170 Rev. 1 (101121) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Max. Unit 35 65 nS t f 500 100 nS t on 100 nS t off 600 nS Delay Time Rise Time VCC = -30dc, VEB = 0 IC = 1.5Adc, IB1 = 150mAdc t Storage Time Fall Time VCC = -30dc, VEB = 0 IC = 1.5Adc, IB1 = IB2 = 150mAdc t Turn-On Time VCC = 30, IC = 1.5Adc, IB = 150mA Turn-Off Time VCC = 30, IC = 1.5Adc, IB = 150mA d r t s Min. SAFE OPERATING AREA DC Test TC = 25°C, 1 cycle, t = 1.0s Test 1 VCE = 3.33Vdc, IC = 3.0Adc Test 2 VCE = 40Vdc, IC = 160mAdc VCE = 60Vdc, IC = 80mAdc T4-LDS-0170 Rev. 1 (101121) 2N3867, 2N3868, S Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Symbol TO-5, 39 CD CH HD LC LD LL LU L1 L2 P Q TL TW R α Dimensions Inches Millimeters Min Max Min Max .305 .335 7.75 8.51 .240 .260 6.10 6.60 .335 .370 8.51 9.40 .200 TP 5.08 TP .016 .019 0.41 0.48 See note 8, 14 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .030 0.76 .029 .045 0.74 1.14 .028 .034 0.71 0.86 .010 0.25 45° TP 45° TP 1, 2, 10, 12, 13, 14 Note 5, 6 4, 5 7 8,9 8,9 8,9 8,9 7 5 3,4 3 10 7 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by gauging procedure. 8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in and beyond LL minimum. 9. All three leads. 10. The collector shall be internally connected to the case. 11. Dimension r (radius) applies to both inside corners of tab. 12. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. 13. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 14. For non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For Ssuffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max. FIGURE 1. Physical dimensions (similar to TO-5, TO-39) T4-LDS-0170 Rev. 1 (101121) Page 4 of 4