BZT52B2V4S-BZT52B75S 200mW, 2% Tolerance SMD Zener Diode Small Signal Diode SOD-323F B C Features A Wide zener voltage range selection : 2.4V to 75V VZ Tolerance Selection of ±2% D Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate E Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code F Dimensions Mechanical Data Unit (mm) Unit (inch) Min Max Min Max Case : Flat lead SOD-323 small outline plastic package A 1.15 1.35 0.045 0.053 Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed B 2.30 2.70 0.091 0.106 C 0.25 0.40 0.010 0.016 High temperature soldering guaranteed: 260°C/10s D 1.60 1.80 0.063 0.071 Polarity : Indicated by cathode band E 0.80 1.00 0.031 0.039 Weight : 4.02±0.5 mg F 0.05 0.20 0.002 0.008 Ordering Information Part No. Package Packing BZT52BxxS RR SOD-323F 3Kpcs / 7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Forward Voltage IF=10mA Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range Symbol Value Units PD 200 mW VF 1 V RθJA 625 °C/W TJ, TSTG -65 to + 150 °C Notes:1. Valid provided that electrodes are kept at ambient temperature Zener I vs. V Characteristics Current IF VZM VZ VBR VR IR IZK VF Voltage IZT IZM BreakdownRegion Leakage Region Forward Region VBR : Voltage at IZK IZK : Test current for voltage VBR ZZK : Dynamic impedance at IZK IZT : Test current for voltage VZ VZ : Voltage at current IZT ZZT : Dynamic impedance at IZT IZM : Maximum steady state current VZM : Voltage at IZM Version : B09 BZT52B2V4S-BZT52B75S 200mW, 2% Tolerance SMD Zener Diode Small Signal Diode Electrical Characteristics Ta = 25°C unless otherwise noted VF Forward Voltage = 1V Maximum @ I F = 10 mA for all part numbers Part Number VZ @ IZT (Volt) Nom Min Max IZT(mA) ZZT @ IZT(Ω) Max IZK(mA) ZZK @ IZK(Ω) IR @ VR(μA) Max Max VR(V) BZT52B2V4S 2.35 2.4 2.45 5 100 1 564 45 BZT52B2V7S 2.65 2.7 2.75 5 100 1 564 18 1 1 BZT52B3V0S 2.94 3 3.06 5 100 1 564 9 1 BZT52B3V3S 3.23 3.3 3.37 5 95 1 564 4.5 1 BZT52B3V6S 3.53 3.6 3.67 5 90 1 564 4.5 1 BZT52B3V9S 3.82 3.9 3.98 5 90 1 564 2.7 1 BZT52B4V3S 4.21 4.3 4.39 5 90 1 564 2.7 1 BZT52B4V7S 4.61 4.7 4.79 5 80 1 470 2.7 2 BZT52B5V1S 5 5.1 5.2 5 60 1 451 1.8 2 BZT52B5V6S 5.49 5.6 5.71 5 40 1 376 0.9 2 BZT52B6V2S 6.08 6.2 6.32 5 10 1 141 2.7 4 BZT52B6V8S 6.66 6.8 6.94 5 15 1 75 1.8 4 BZT52B7V5S 7.35 7.5 7.65 5 15 1 75 0.9 5 BZT52B8V2S 8.04 8.2 8.36 5 15 1 75 0.63 5 BZT52B9V1S 8.92 9.1 9.28 5 15 1 94 0.45 6 BZT52B10S 9.8 10 10.2 5 20 1 141 0.18 7 BZT52B11S 10.78 11 11.22 5 20 1 141 0.09 8 BZT52B12S 11.76 12 12.24 5 25 1 141 0.09 8 BZT52B13S 12.74 13 13.26 5 30 1 160 0.09 8 BZT52B15S 14.7 15 15.3 5 30 1 188 0.045 10.5 BZT52B16S 15.68 16 16.32 5 40 1 188 0.045 11.2 BZT52B18S 17.64 18 18.36 5 45 1 212 0.045 12.6 BZT52B20S 19.60 20 20.40 5 55 1 212 0.045 14.0 BZT52B22S 21.56 22 22.44 5 55 1 235 0.045 15.4 BZT52B24S 23.52 24 24.48 5 70 1 235 0.045 16.8 BZT52B27S 26.46 27 27.54 2 80 0.5 282 0.045 18.9 BZT52B30S 29.40 30 30.60 2 80 0.5 282 0.045 21.0 BZT52B33S 32.34 33 33.66 2 80 0.5 306 0.045 23.0 BZT52B36S 35.28 36 36.72 2 90 0.5 329 0.045 25.2 BZT52B39S 38.22 39 39.78 2 130 0.5 329 0.045 27.3 BZT52B43S 42.14 43 43.86 2 150 0.5 353 0.045 30.1 BZT52B47S 46.06 47 47.94 2 170 0.5 353 0.045 33.0 BZT52B51S 49.98 51 52.02 2 180 0.5 376 0.045 35.7 BZT52B56S 54.88 56 57.12 2 200 0.5 400 0.045 39.2 BZT52B62S 60.76 62 63.24 2 215 0.5 423 0.045 43.4 BZT52B68S 66.64 68 69.36 2 240 0.5 447 0.045 47.6 BZT52B75S 73.50 75 76.50 2 255 0.5 470 0.045 52.5 Notes: 1. The Zener Voltage (V Z) is tested under pulse condition of 10ms. 2. The device numbers listed have a standard tolerance on the nominal zener voltage of ±2%. 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan semiconductor representative. 4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to 10% of the DC zener current (I ZT or IZK) is superimposed to I ZT or IZK. Version : B09 BZT52B2V4S-BZT52B75S 200mW, 2% Tolerance SMD Zener Diode Small Signal Diode Rating and Sharacteristic Curves FIG 2 Zener Breakdown Characteristics FIG 1 Typical Forward Characteristics 100 Zener Current (mA) Forward Current (mA) 1000 100 Ta=25°C 10 Ta=25°C 10 1 0.10 1 0.01 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 1 2 3 Forward Voltage (V) 6 7 8 9 10 11 12 FIG 4 Admissible Power Disspation Curve FIG 3 Zener Breakdown Characteristics Power Dissipation (mW) 300 10 Zener Current (mA) 5 Zener Voltage (V) 100 1 0 250 200 150 100 50 0 0 15 25 35 45 55 65 0 75 50 Zener Voltage (V) 100 150 200 Ambient Tempeture (°C) FIG 5 Typical Capacitance FIG 6 Effect of Zener Voltage on Impedence 1000 1000 100 Dynamic Impedence (Ώ) Capacitance(pF) 4 100 1V Bias Ta=150°C 10 Bias at 50% of VZ(Nom) Iz=1mA Ta=25°C Iz=5mA 10 Iz=20m 1 1 1 10 Zener Voltage (V) 100 1 10 100 Zener Voltage (V) Version : B09