Fairchild FQI27P06 60v p-channel mosfet Datasheet

QFET
TM
FQB27P06 / FQI27P06
60V P-Channel MOSFET
General Description
Features
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
•
•
•
•
•
•
•
-27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V
Low gate charge ( typical 33 nC)
Low Crss ( typical 120 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
S
D
!
●
●
G!
▶ ▲
●
G
S
D2-PAK
G D S
FQB Series
Absolute Maximum Ratings
Symbol
VDSS
ID
I2-PAK
!
FQI Series
D
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQB27P06 / FQI27P06
-60
Units
V
-27
A
-19.1
A
- Continuous (TC = 100°C)
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
dv/dt
PD
TJ, TSTG
TL
- Pulsed
-108
A
± 25
V
(Note 2)
560
mJ
(Note 1)
-27
A
(Note 1)
12
-7.0
3.75
mJ
V/ns
W
120
0.8
-55 to +175
W
W/°C
°C
300
°C
(Note 1)
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
Max
1.25
Units
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient *
--
40
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001
FQB27P06 / FQI27P06
May 2001
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
-60
--
--
V
--
-0.06
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
IDSS
IGSSF
IGSSR
VDS = -60 V, VGS = 0 V
--
--
-1
µA
VDS = -48 V, TC = 150°C
--
--
-10
µA
Gate-Body Leakage Current, Forward
VGS = -25 V, VDS = 0 V
--
--
-100
nA
Gate-Body Leakage Current, Reverse
VGS = 25 V, VDS = 0 V
--
--
100
nA
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -13.5 A
--
0.055
0.07
Ω
gFS
Forward Transconductance
VDS = -30 V, ID = -13.5 A
--
12.4
--
S
--
1100
1400
pF
--
510
660
pF
--
120
155
pF
ns
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -30 V, ID = -13.5 A,
RG = 25 Ω
(Note 4, 5)
VDS = -48 V, ID = -27 A,
VGS = -10 V
(Note 4, 5)
--
18
45
--
185
380
ns
--
30
70
ns
--
90
190
ns
--
33
43
nC
--
6.8
--
nC
--
18
--
nC
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-27
ISM
--
--
-108
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -27 A
Drain-Source Diode Forward Voltage
--
--
-4.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -27 A,
dIF / dt = 100 A/µs
(Note 4)
--
105
--
ns
--
0.41
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.9mH, IAS = -27A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -27A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001
FQB27P06 / FQI27P06
Elerical Characteristics
FQB27P06 / FQI27P06
Typical Characteristics
2
2
10
10
VGS
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
1
10
1
10
-I D , Drain Current [A]
-I D, Drain Current [A]
Top :
0
175℃
25℃
0
10
-55℃
※ Notes :
1. VDS = -30V
2. 250μ s Pulse Test
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
10
-1
-1
0
10
10
1
10
2
10
4
6
8
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.24
2
10
0.16
VGS = - 10V
0.12
VGS = - 20V
0.08
0.04
※ Note : TJ = 25℃
0.00
-I DR , Reverse Drain Current [A]
RDS(on) [ Ω ],
Drain-Source On-Resistance
0.20
1
10
0
10
175℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
-1
0
10
20
30
40
50
60
70
80
90
100 110 120 130
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
2000
Ciss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
1500
1000
Crss
500
0
-1
10
10
-V GS , Gate-Source Voltage [V]
2500
Capacitance [pF]
25℃
VDS = -30V
8
VDS = -48V
6
4
2
※ Note : ID = -27 A
0
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A2. May 2001
(Continued)
2.5
1.2
2.0
1.1
RDS(ON) , (Normalized)
Drain-Source On-Resistance
-BV DSS , (Normalized)
Drain-Source Breakdown Voltage
FQB27P06 / FQI27P06
Typical Characteristics
1.0
※ Notes :
1. VGS = 0 V
2. ID = -250 μ A
0.9
0.8
-100
-50
0
50
100
150
1.5
1.0
※ Notes :
1. VGS = -10 V
2. ID = -13.5 A
0.5
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
30
Operation in This Area
is Limited by R DS(on)
25
2
100 µs
1 ms
-I D, Drain Current [A]
-I D, Drain Current [A]
10
10 ms
1
DC
10
0
10
※ Notes :
o
1. TC = 25 C
20
15
10
5
o
2. TJ = 175 C
3. Single Pulse
-1
10
0
1
10
0
25
2
10
10
50
100
125
150
175
Figure 10. Maximum Drain Current
vs. Case Temperature
0
D = 0 .5
※ N o te s :
1 . Z θ J C ( t ) = 1 . 2 5 ℃ /W M a x .
2 . D u ty F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t )
0 .2
0 .1
10
-1
0 .0 5
PDM
0 .0 2
0 .0 1
t1
10
t2
s in g le p u ls e
Z
θ
JC
( t) , T h e r m a l R e s p o n s e
Figure 9. Maximum Safe Operating Area
10
75
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001
FQB27P06 / FQI27P06
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
-10V
300nF
VDS
VGS
Qgs
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
t on
VDD
VGS
RG
td(on)
VGS
t off
tr
td(off)
tf
10%
DUT
-10V
VDS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
tp
ID
RG
VDD
DUT
-10V
tp
©2001 Fairchild Semiconductor Corporation
VDD
Time
VDS (t)
ID (t)
IAS
BVDSS
Rev. A2. May 2001
FQB27P06 / FQI27P06
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Compliment of DUT
(N-Channel)
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
Body Diode Reverse Current
IRM
di/dt
IFM , Body Diode Forward Current
VDS
( DUT )
VSD
Body Diode
Forward Voltage Drop
VDD
Body Diode Recovery dv/dt
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001
FQB27P06 / FQI27P06
Package Dimensions
4.50 ±0.20
9.90 ±0.20
+0.10
2.00 ±0.10
2.54 TYP
(0.75)
°
~3
0°
0.80 ±0.10
1.27 ±0.10
2.54 ±0.30
15.30 ±0.30
0.10 ±0.15
2.40 ±0.20
4.90 ±0.20
1.40 ±0.20
9.20 ±0.20
1.30 –0.05
1.20 ±0.20
(0.40)
D2PAK
+0.10
0.50 –0.05
2.54 TYP
9.20 ±0.20
(2XR0.45)
4.90 ±0.20
15.30 ±0.30
10.00 ±0.20
(7.20)
(1.75)
10.00 ±0.20
(8.00)
(4.40)
0.80 ±0.10
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001
FQB27P06 / FQI27P06
Package Dimensions
(Continued)
I2PAK
4.50 ±0.20
(0.40)
9.90 ±0.20
+0.10
MAX13.40
9.20 ±0.20
(1.46)
1.20 ±0.20
1.30 –0.05
0.80 ±0.10
2.54 TYP
2.54 TYP
10.08 ±0.20
1.47 ±0.10
MAX 3.00
(0.94)
13.08 ±0.20
)
5°
(4
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
10.00 ±0.20
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H2