PD - 94168A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
IRHNA597260
200V, P-CHANNEL
4#
TECHNOLOGY
c
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHNA597260 100K Rads (Si) 0.102Ω -35.5A
IRHNA593260 300K Rads (Si)
0.102Ω -35.5A
SMD-2
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space applications. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
-35.5
-22.5
-142
300
2.4
±20
320
-35.5
30
10
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 ( for 5s )
3.3 ( Typical )
C
g
For footnotes refer to the last page
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1
08/07/01
IRHNA597260
Pre-Irradiation
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
Min. Typ. Max. Units
-200
—
—
V
—
0.25 —
V/°C
—
— 0.11
—
— 0.102
Ω
—
—
0.2
-2.0
— -4.0
V
23
—
—
S
—
—
-10
µA
—
—
-25
—
— -100
nA
—
—
100
—
—
180
—
—
60
nC
—
—
40
—
—
35
—
—
80
ns
—
—
100
—
—
200
—
4.0
— nH
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Input Capacitanc
—
7170
—
Coss
Output Capacitance
—
920
—
Crss
Reverse Transfer Capacitance
—
86
—
IGSS
pF
Conditions
VGS = 0V, ID = - 1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -35.5A
VGS = -12V, ID = -22.5A
VGS = -12V, ID = -22.5A,TJ =125°C
VDS = VGS, ID = -1mA
VDS > -15V, ID = -22.5 A
VDS = -200V, VGS = 0V
VDS = -160V, VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
ID = -35.5A
VDS = -100V
VGS = -12V
VDD = -100V, ID = -35.5A
VGS = -12V, RG = 2.35 Ω
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = -25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-35.5
-142
-5.0
450
5.5
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = -35.5A, VGS = 0V ➃
Tj = 25°C, IF =-35.5A, di/dt ≤ -100A/µs
VDD ≤ -50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
—
—
—
1.6
0.42
—
°C/W
Test Conditions
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNA597260
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)1
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-3)
Static Drain-to-Source ➃
On-State Resistance (SMD-2)
Diode Forward Voltage ➃
300KRads(Si)2
Min
Max
Units
Test Conditions
-200
-2.0
—
—
—
—
—
-4.0
-100
100
-10
0.103
-200
-2.0
—
—
—
—
—
-5.0
-100
100
-10
0.103
nA
µA
Ω
VGS = 0V, ID = -1.0mA
VGS = VDS, ID = -1.0mA
VGS =-20V
VGS = 20 V
VDS = -160V, VGS =0V
VGS = -12V, ID =-22.5A
—
0.102
—
0.102
Ω
VGS = -12V, ID =-22.5A
—
-5.0
—
-5.0
V
VGS = 0V, IS = -35.5A
V
1. Part number IRHNA597260,
2. Part number IRHNA593260
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
(MeV/(mg/cm2))
37.3
59.9
82.3
VDS (V)
Range
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
36.8
- 200
- 200
- 200
- 200
-75
32.7
- 200
- 200
- 200
- 50
—
28.5
- 200
- 200
- 200
- 35
—
Energy
(MeV)
285
345
357
-250
VDS
-200
Br
-150
I
-100
Au
-50
0
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA597260
1000
Pre-Irradiation
1000
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
100
100
-5.0V
20µs PULSE WIDTH
T = 25 C
J
10
1
-5.0V
20µs PULSE WIDTH
T = 150 C
°
10
J
10
100
1
°
10
100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
TJ = 25 ° C
100
10
5.0
TJ = 150 ° C
15
V DS = -50V
20µs PULSE WIDTH
5.5
6.0
6.5
7.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
1000
4
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
TOP
ID = -35.5A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
8000
Ciss
6000
4000
2000
C
rss
Coss
20
-VGS , Gate-to-Source Voltage (V)
10000
C, Capacitance (pF)
IRHNA597260
0
ID = -35.5A
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
50
-VDS , Drain-to-Source Voltage (V)
100
150
200
250
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
-I D, Drain-to-Source Current (A)
1000
-ISD , Reverse Drain Current (A)
VDS =-160V
VDS =-100V
VDS =-40V
TJ = 150 ° C
100
10
TJ = 25 ° C
1
V GS = 0 V
0.1
0.0
1.5
3.0
4.5
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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OPERATION IN THIS AREA
LIMITED BY R DS(on)
6.0
10
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
1
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHNA597260
Pre-Irradiation
40
RD
V DS
-ID , Drain Current (A)
VGS
D.U.T.
RG
30
-
V DD
+
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
0.01
t1
t2
0.001
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNA597260
+
IA S
VGS
-20V
tp
VVDD
DD
A
D R IV E R
0.0 1Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
EAS , Single Pulse Avalanche Energy (mJ)
-
D .U .T
RG
600
L
VDS
ID
-16A
-22.5A
BOTTOM -35.5A
TOP
500
400
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
50KΩ
-12V
12V
.2µF
.3µF
-12 V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHNA597260
Pre-Irradiation
Footnotes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = -50V, starting TJ = 25°C, L=0.5 mH
Peak IL = - 35.5A, VGS = -12V
➂ ISD ≤ - 35.5A, di/dt ≤ - 450A/µs,
VDD ≤ - 200V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
-160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-2
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TAC Fax: (310) 252-7903
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Data and specifications subject to change without notice. 8/01
8
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