GDSSF3611E
Main Product Characteristics:
VDSS
-30 V
RDS(on)
10.6 mΩ(typ.)
ID
-12A
Marking and pin
Features and Benefits:
Schematic diagram
Assignment
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance
resistance with low gate charge
Fast
ast switching and reverse body recovery
150℃ operating temperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating.
rating These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
-12
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
-7.4
IDM
Pulsed Drain Current②
Current
-48
PD @TC = 25°C
Power Dissipation③
Dissipation
2
W
VDS
Drain-Source
Source Voltage
-30
V
VGS
Gate-to-Source
Source Voltage
± 20
V
-55
55 to +1
+150
°C
TJ
TSTG
Operating Junction and Storage Temperature Range
A
Thermal Resistance
Symbol
Characterizes
RθJA
Junction-to-ambient
ambient (t ≤ 10s) ④
Suzhou Goodark Electronics Co., Ltd
Typ.
Max.
Units
—
62.5
℃/W
Version 1.0
GDSSF
SSF3611E
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-to-Source
Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
resistance
VGS(th)
Min.
Typ.
Max.
Units
-30
—
—
V
—
10.6
13
—
14.1
16
Gate threshold voltage
1
—
2
V
VDS = VGS, ID = 250μA
IDSS
Drain-to-Source
Source leakage current
—
—
-1
μA
VDS = -30V,VGS = 0V
IGSS
Gate-to-Source
Source forward leakage
—
—
10
—
—
-10
Qg
Total gate charge
—
55
—
Qgs
Gate-to-Source charge
—
3.5
—
Qgd
Gate-to-Drain("Miller")
Drain("Miller") charge
—
18
—
td(on)
Turn-on delay time
—
8.0
—
tr
Rise time
—
5.8
—
td(off)
Turn-Off delay time
—
56
—
tf
Fall time
—
38
—
Ciss
Input capacitance
—
3224
—
Coss
Output capacitance
—
459
—
Crss
Reverse transfer capacitance
—
425
—
mΩ
μA
Conditions
VGS = 0V, ID = 250μA
VGS =-10.0V, ID =-10.0A
VGS =-4.50V, ID =-7.50A
VGS = 20V
VGS = -20V
ID = -10A,
nC
VDS=-25V,
VGS = -10V
VGS=-10V, VDS=-15V,
ns
RL=15Ω,
RGEN=3Ω
VGS = 0V
pF
VDS = -15V
ƒ = 1MHz
Source-Drain
Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
-12
A
—
—
-48
A
Conditions
MOSFET symbol
showing
the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
-0.73
-1.2
V
IS=-2.1A, VGS=0V
trr
Reverse Recovery Time
—
16
—
ns
TJ = 25°C, IF =-10A, di/dt =
Qrr
Reverse Recovery Charge
—
5.9
—
uC
100A/μs
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF
SSF3611E
Test circuits and Waveforms
Switch time test circuit:
Switch Waveforms:
Notes:
①The
The maximum current rating is limited by bond-wires.
bond
②Repetitive rating; pulse width limited by max. junction temperature.
③The
The power dissipation PD is based on max. junction temperature, using junction
tion-to-ambient thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4
4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These
These curves are based on the junction-to-case
junction case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature
ure of TJ(MAX)=150°C.
⑥ The maximum current rating is limited by bond-wires.
bond
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF
SSF3611E
Mechanical Data：
SOP8 PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A2
b
c
D
E
E1
e
L
Dimension In Millimeters
Min
Max
1.350
1.750
0.100
0.250
1.280
1.480
0.406
0.173
0.233
4.800
5.000
3.800
4.000
5.800
6.200
1.27TYP
0.400
1.250
Suzhou Goodark Electronics Co., Ltd
Dimension In Inches
Min
Max
0.053
0.069
0.004
0.010
0.050
0.058
0.016
0.007
0.009
0.189
0.197
0.150
0.157
0.228
0.244
0.050TYP
0.016
0.050
Version 1.0
GDSSF
SSF3611E
Ordering and Marking Information
Device Marking: SSF3611E
3611E
Package (Available)
SOP-8
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
SOP-8
Units/
Tape
Tapes/Inner
s/Inner
Box
2500
Suzhou Goodark Electronics Co., Ltd
2
Units/Inner Inner
Box
Boxes/Carton
Box
5000
Units/Carton
Box
8
40000
Version 1.0