Fairchild FQD9N25 N-channel qfetâ® mosfet 250 v, 7.4a, 420î© Datasheet

FQD9N25 / FQU9N25
N-Channel QFET® MOSFET
250 V, .4 A, PΩ
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
• 7.4 A, 250 V, RDS(on) = 420 mΩ (Max.) @VGS = 10 V,
ID = 3.7 A
• Low Gate Charge (Typ. 15.5 nC)
• Low Crss (Typ. 15 pF)
• 100% Avalanche Tested
D
D
G
S
I-PAK
D-PAK
G
D
G
S
S
Absolute Maximum Ratings T
Symbol
,
o
C
= 25 C unless otherwise noted.
FQD9N25TM
FQD9N25TM_F080
FQU9N25TU
)*+
Parameter
5
, 2.)*63
5
,
: , < 5
7 (!
<
-!(!
< 7 >- !!$
7 2 .)*63?
2.0++63
!$
7
(!
7 < Unit
,
&'
(
'&
(
)8 9
(
±;+
,
09*
&'
(
**
**
)*
=
,$ @
**
+ ''
**A0*+
@
@$6
6
;++
6
7 2.)*63
"!)*6
- B 0$C * =
Thermal Characteristics
Symbol
RJC
RJA
FQD9N25TM
FQD9N25TM_F080
FQU9N25TU
2.27
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
2
Thermal Resistance, Junction to Ambient (*1 in pad of 2 oz copper), Max.
©2000 Fairchild Semiconductor Corporation
FQD9N25 / FQU9N25 Rev. C1
1
110
Unit
oC/W
50
www.fairchildsemi.com
FQD9N25 / FQU9N25 — N-Channel QFET® MOSFET
October 2013
Part Number
FQD9N25TM
Top Mark
FQD9N25
Package
D-PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
FQD9N25TM_F080
FQD9N25
D-PAK
Tape and Reel
330 mm
16 mm
2500 units
FQU9N25TU
FQU9N25
I-PAK
Tube
N/A
N/A
70 units
Electrical Characteristics T
o
C
= 25 C unless otherwise noted.
)*+
,
+)
,$6
,.)*+,,.+,
0
µ(
,.)++,.0)*6
0+
µ(
D,
D > , ,.+,5.)*+µ(
∆D,
$∆
D > , 5.)*+µ(-
5
E: , )*6
5
: D1 > ,.;+,,.+,
0++
(
5
: D1 > -!
,.;+,,.+,
0++
(
;+
*+
,
,
: , ,.,5.)*+µ(
-
-
,.0+,5.; &(
+ ;;
+ ')
Ω
,.*+,5.; &(
9C
,.)*,,.+,
.0 +F#
*'+
&++
00+
0'*
0*
)+
5 -!
- G
: G
: G
: ,.0)*,5.8 '(
-.)*Ω
,.)++,5.8.'(
,.0+, 0;
;*
0+*
))+
)*
9+
'*
0++
0* *
)+
;C
C*
5
B &'
(
5
)8 9
(
,
B 7 ,.+,5.& '(
, 0*
,
-!- ! 0*+
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µ
,.+,5.8 '(
5$.0++($µ
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 4.8 mH, IAS = 7.4 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25oC
3. ISD ≤ 9.4 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, Starting TJ = 25oC
4. Essentially independent of operating temperature
©2000 Fairchild Semiconductor Corporation
FQD9N25 / FQU9N25 Rev. C1
2
www.fairchildsemi.com
FQD9N25 / FQU9N25 — N-Channel QFET® MOSFET
Package Marking and Ordering Information
' % # & RDS(ON) [Ω],
Drain-Source On-Resistance
!"#
! " #$ ©2000 Fairchild Semiconductor Corporation
FQD9N25 / FQU9N25 Rev. C1
3
www.fairchildsemi.com
FQD9N25 / FQU9N25 — N-Channel QFET® MOSFET
! #! $%
01 (
- .! #$ / #$ # " $%&'&'&(%
&)&&*+, µ µ
- .&'/
! " ( ) *$$" & +
', ) *$$ #$ ! " # $ %
& ' ( ZJC(t), Thermal Response [oC/W]
"
! ! '' # #$ ©2000 Fairchild Semiconductor Corporation
FQD9N25 / FQU9N25 Rev. C1
4
www.fairchildsemi.com
FQD9N25 / FQU9N25 — N-Channel QFET® MOSFET
! FQD9N25 / FQU9N25 — N-Channel QFET® MOSFET
50KΩ
200nF
12V
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
t off
tf
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
VDS (t)
VDD
DUT
tp
Time
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2000 Fairchild Semiconductor Corporation
FQD9N25 / FQU9N25 Rev. C1
5
www.fairchildsemi.com
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2000 Fairchild Semiconductor Corporation
FQD9N25 / FQU9N25 Rev. C1
6
www.fairchildsemi.com
FQD9N25 / FQU9N25 — N-Channel QFET® MOSFET
DUT
FQD9N25 / FQU9N25 — N-Channel QFET® MOSFET
Mechanical Dimensions
TO-252 3L (DPAK)
FQD9N25TM
Figure 16. TO252 (D-PAK), Molded, 3 Lead, Option AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003.
Dimension in Millimeters
©2000 Fairchild Semiconductor Corporation
FQD9N25 / FQU9N25 Rev. C1
7
www.fairchildsemi.com
FQD9N25 / FQU9N25 — N-Channel QFET® MOSFET
Mechanical Dimensions
TO-252 3L (DPAK)
FQD9N25TM_F080
Figure 17. 3LD, TO-252, Jedec TO-252 VAR. AB, Surface Mount
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO252-003.
Dimension in Millimeters
©2000 Fairchild Semiconductor Corporation
FQD9N25 / FQU9N25 Rev. C1
8
www.fairchildsemi.com
FQD9N25 / FQU9N25 — N-Channel QFET® MOSFET
Mechanical Dimensions
TO-251 3L (IPAK)
Figure 18. TO251 (IPAK) Molded 3 Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO251-003.
Dimension in Millimeters
©2000 Fairchild Semiconductor Corporation
FQD9N25 / FQU9N25 Rev. C1
9
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2000 Fairchild Semiconductor Corporation
FQD9N25 / FQU9N25 Rev. C1
10
www.fairchildsemi.com
FQD9N25 / FQU9N25 — N-Channel QFET® MOSFET
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