Pb Free Plating Product ISSUED DATE :2005/08/19 REVISED DATE : GJ01L60 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 600V 12 1A Description The GJ01L60 (TO-252) is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. Features *Repetitive Avalanche Rated *Simple Drive Requirement *Fast Switching Speed *RoHS Compliant Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current, VGS@10V ID @TC=25 1 A Continuous Drain Current, VGS@10V ID @TC=100 0.8 A 3 A 29 W Pulsed Drain Current 1 IDM Total Power Dissipation PD @TC=25 Linear Derating Factor Single Pulse Avalanche Energy 0.232 2 W/ EAS 0.5 mJ Avalanche Current IAR 1 A Repetitive Avalanche Energy EAR 0.5 mJ Tj, Tstg -55 ~ +150 Symbol Value Operating Junction and Storage Temperature Range Thermal Data Parameter Unit Thermal Resistance Junction-case Max. Rthj-case 4.3 /W Thermal Resistance Junction-ambient Max. Rthj-amb 110 /W GJ01L60 Page: 1/4 ISSUED DATE :2005/08/19 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 600 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.8 - Gate Threshold Voltage VGS(th) 2.0 - 4.0 V VDS=VGS, ID=250uA gfs - 0.8 - S VDS=10V, ID=0.5A IGSS - - ±100 nA VGS= ±30V - - 10 uA VDS=600V, VGS=0 - - 100 uA VDS=480V, VGS=0 RDS(ON) - - 12 Qg - 4.0 - Gate-Source Charge Qgs - 1.0 - Gate-Drain (“Miller”) Change Qgd - 1.1 - Td(on) - 6.6 - Tr - 5.0 - Td(off) - 11.7 - Tf - 9.2 - Input Capacitance Ciss - 170 - Output Capacitance Coss - 30.7 - Reverse Transfer Capacitance Crss - 5.1 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V IS=1A, VGS=0V, Tj=25 IS - - 1 A VD=VG=0V, VS=1.2V ISM - - 5 A Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) 3 Static Drain-Source On-Resistance 3 Total Gate Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time IDSS V/ Test Conditions VGS=0, ID=1mA Reference to 25 , ID=1mA VGS=10V, ID=0.5A nC ID=1A VDS=480V VGS=10V ns VDD=300V ID=1A VGS=10V RG=3.3 RD=300 pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage3 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 , VDD=50V, L=1.0mH, RG=25 , IAS=1.0A. 3. Pulse width 300us, duty cycle 2%. GJ01L60 Page: 2/4 ISSUED DATE :2005/08/19 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature GJ01L60 Page: 3/4 ISSUED DATE :2005/08/19 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GJ01L60 Page: 4/4