AO3422 N-Channel Enhancement Mode Field Effect Transistor TO-236 (SOT-23) Features VDS (V) = 55V ID = 2.1A (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 4.5V) RDS(ON) < 200mΩ (VGS = 2.5V) General Description D The AO3422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. Standard product AO3422 is Pb-free (meets ROHS & Sony 259 specifications). AO3422L is a Green Product ordering option. AO3422 and AO3422L are electrically identical. G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A ID TA=70°C Pulsed Drain Current B IDM TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C 2014-5-28 TJ, TSTG Symbol 1 Units V V 2.1 1.7 A 10 1.25 0.8 -55 to 150 PD t ≤ 10s Steady-State Steady-State Maximum 55 ±12 RθJA RθJL Typ 75 115 48 W °C Max 100 150 60 Units °C/W °C/W °C/W www.kersemi.com AO3422 A: The value of RÿJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ÿ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R ÿJA is the sum of the thermal impedence from junction to lead RÿJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 ÿs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. 2014-5-28 2 www.kersemi.com AO3422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 10 10V 3.5V 8 6 2.5V ID(A) ID (A) VDS=5V 6 5V 4 4 125°C VGS=2V 2 2 25°C 0 0 0 1 2 3 4 5 1 1.25 VDS (Volts) Fig 1: On-Region characteristics 1.75 2 2.25 2.5 VGS(Volts) Figure 2: Transfer Characteristics 200 Normalized On-Resistance 2 180 RDS(ON) (mΩ) 1.5 VGS=2.5V 160 140 120 VGS=4.5V 100 1.8 VGS=4.5 1.6 1.4 VGS=2.5V 1.2 1 0.8 0 1 2 3 4 5 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 360 1E+00 125°C ID=2.3A 125°C 1E-01 260 IS (A) RDS(ON) (mΩ) 310 210 160 1E-02 25°C 1E-03 110 25°C 1E-04 60 1E-05 10 0 2 4 6 8 0.0 10 0.4 0.6 0.8 1.0 1.2 1.4 VSD (Volts) Figure 6: Body-Diode Characteristics VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 2014-5-28 0.2 3 www.kersemi.com AO3422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 5 360 VDS=27.5V ID=2.1A Ciss 320 Capacitance (pF) VGS (Volts) 4 3 2 280 240 200 160 Coss 120 Crss 80 1 40 0 0 0 1 2 0 3 5 100.0 Power (W) ID (Amps) 10.0 100μs 0.1s 1.0 10ms 15 15 TJ(Max)=150°C TA=25°C RDS(ON) limited 10 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1ms 1s TJ(Max)=150°C TA=25°C 10 5 10s DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=100°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 2014-5-28 4 www.kersemi.com