Intersil HGT1S20N35G3VL 20a, 350v n-channel, logic level, voltage clamping igbt Datasheet

HGTP20N35G3VL,
HGT1S20N35G3VL,
HGT1S20N35G3VLS
20A, 350V N-Channel,
Logic Level, Voltage Clamping IGBTs
April 1995
Features
Packages
JEDEC TO-220AB
• Logic Level Gate Drive
COLLECTOR
EMITTER
• Internal Voltage Clamp
GATE
COLLECTOR
(FLANGE)
• ESD Gate Protection
• TJ = 175oC
• Ignition Energy Capable
JEDEC TO-262AA
Description
EMITTER
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.
COLLECTOR
GATE
A
COLLECTOR
(FLANGE)
JEDEC TO-263AB
M
COLLECTOR
(FLANGE)
A
A
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
HGTP20N35G3VL
T0-220AB
20N35GVL
HGT1S20N35G3VL
T0-262AA
20N35GVL
HGT1S20N35G3VLS
T0-263AB
20N35GVL
GATE
EMITTER
BRAND
Terminal Diagram
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N35G3VLS9A.
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
The development type number for this device is TA49076.
R1
GATE
R2
EMITTER
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified
Collector-Emitter Bkdn Voltage At 10mA, RGE = 1kΩ. . . . . . . . . . . . . . . . . . . . . . . BVCER
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS
Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7 . . . . . . . . . . . . . IC25
At VGE = 5.0V, TC = +100oC . . . . . . . . . . . . . . . . . . . .IC100
Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Inductive Switching Current At L = 2.3mH, TC = +25o C . . . . . . . . . . . . . . . . . . . . . ISCIS
At L = 2.3mH, TC = +175oC . . . . . . . . . . . . . . . . . . . . . ISCIS
Collector to Emitter Avalanche Energy At L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . EAS
Power Dissipation Total At TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
HGTP20N35G3VL
HGT1S20N35G3VL
HGT1S20N35G3VLS
375
24
20
20
±10
26
18
775
150
1.0
-40 to +175
260
6
UNITS
V
V
A
A
V
A
A
mJ
W
W/oC
oC
oC
KV
NOTE: May be exceeded if IGEM is limited to 10mA.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
3-66
File Number
4006
Specifications HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Electrical Specifications
TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETERS
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
SYMBOL
BVCES
BVCER
TEST CONDITIONS
IC = 10mA,
VGE = 0V
IC = 10mA
VGE = 0V
RGE = 1kΩ
MIN
TYP
MAX
UNITS
TC = +175oC
310
345
380
V
TC = +25oC
320
350
380
V
TC = -40oC
320
355
390
V
TC = +175oC
300
340
375
V
TC = +25oC
315
345
375
V
TC = -40oC
315
350
390
V
Gate-Emitter Plateau Voltage
VGEP
IC = 10A
VCE = 12V
TC = +25oC
-
3.7
-
V
Gate Charge
QG(ON)
IC = 10A
VGE = 5V
VCE = 12V
TC = +25oC
-
28.7
-
nC
Collector-Emitter Clamp Bkdn. Voltage
BVCE(CL)
IC = 10A
RG = 0Ω
TC = +175oC
325
360
395
V
IC = 10mA
TC = +25oC
20
32
-
V
VCE = 250V
TC = +25oC
-
-
5
µA
VCE = 250V
TC = +175oC
-
-
250
µA
IC = 10A
VGE = 4.5V
TC = +25oC
-
1.3
1.6
V
TC = +175oC
-
1.25
1.5
V
TC = +25oC
-
1.6
2.8
V
TC = +175oC
-
1.9
3.5
V
TC = +25oC
1.3
1.8
2.3
V
Emitter-Collector Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
BVECS
ICES
VCE(SAT)
IC = 20A
VGE = 5.0V
Gate-Emitter Threshold Voltage
VGE(TH)
IC = 1mA
VCE = VGE
Gate Series Resistance
R1
TC = +25oC
-
1.0
-
kΩ
Gate-Emitter Resistance
R2
TC = +25oC
10
17
25
kΩ
Gate-Emitter Leakage Current
Gate-Emitter Breakdown Voltage
Current Turn-Off Time-Inductive Load
Inductive Use Test
Thermal Resistance
IGES
VGE = ±10V
±400
±590
±1000
µA
BVGES
IGES = ±2mA
±12
±14
-
V
-
15
30
µs
TC = +175oC
18
-
-
A
TC = +25oC
26
-
-
A
-
-
1.0
oC/W
tD(OFF)I +
tF(OFF)I
ISCIS
IC = 10A, RG = 25Ω,
L = 550 H, R L = 26.4Ω, VGE = 5V,
VCL = 300V, TC = +175oC
L = 2.3mH,
VG = 5V,
RG = 0Ω
RθJC
3-67
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = +25oC
100
50
ICE, COLLECTOR-EMITTER CURRENT (A)
ICE, COLLECTOR-EMITTER CURRENT (A)
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VCE = 10V
40
30
TC = +175oC
TC = +25oC
20
TC =
-40oC
10
0
1
3
2
4
5
VGE=10V
5.0V
60
4.5V
40
4.0V
3.5V
20
3.0V
2.5V
0
6
ICE , COLLECTOR EMITTER CURRENT (A)
ICE , COLLECTOR EMITTER CURRENT (A)
20
VGE = 4.0V
10
0
10
-40oC
VGE = 4.5V
+25oC
40
+175oC
30
20
10
0
1
3
2
5
4
VCE(SAT) , SATURATION VOLTAGE (V)
FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
2.2
ICE = 10A
VCE(SAT) , SATURATION VOLTAGE (V)
VCE(SAT) , SATURATION VOLTAGE (V)
8
50
0
4
FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
1.4
6
FIGURE 2. SATURATION CHARACTERISTICS
VGE = 4.5V
2
3
VCE(SAT) , SATURATION VOLTAGE (V)
4
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VGE = 5.0V
1
2
0
TC = +175oC
0
6.0V
5.5V
FIGURE 1. TRANSFER CHARACTERISTICS
30
6.5V
80
VGE, GATE-TO-EMITTER VOLTAGE (V)
40
7V
VGE = 4.0V
1.3
VGE = 4.5V
1.2
VGE = 5.0V
1.1
ICE = 20A
2.1
VGE = 4.0V
2.0
1.9
VGE = 4.5V
1.8
1.7
4.5V
VGE = 5.0V
1.6
1.5
-25
+25
+75
+125
+175
-25
+25
+75
+125
+175
TJ , JUNCTION TEMPERATURE (oC)
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
3-68
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves (Continued)
VGE = 5.0V
20
PACKAGE LIMITED
15
10
5
0
+25
+50
+75
+125
+100
+150
1.2
VTH, NORMAILZED THRESHOLD VOLTAGE
ICE, COLLECTOR-EMITTER CURRENT (A)
25
ICE = 1mA
1.1
1.0
0.9
0.8
0.7
0.6
0.5
+175
+125
+175
FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A
FUNCTION OF JUNCTION TEMPERATURE
18
105
VCL= 300V, RGE = 25Ω, VGE = 5V, L= 550 H
104
VECS = 20V
t(OFF)I, TURN OFF TIME ( s)
LEAKAGE CURRENT ( A)
+75
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF CASE TEMPERATURE
103
102
101
VCES = 250V
100
10-1
16
ICE = 6A, RL= 50Ω
14
ICE =10A, RL= 30Ω
12
ICE =15A, RL= 20Ω
10
+25
+75
+50
+100
+125
+150
+175
+25
TJ , JUNCTION TEMPERATURE (oC)
45
+50
+100
+75
+125
+150
FIGURE 10. TURN-OFF TIME AS A FUNCTION OF
JUNCTION TEMPERATURE
1200
VGE = 5V
VGE = 5V
40
1000
EAS , ENERGY (mJ)
+25oC
35
+175
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF
JUNCTION TEMPERATURE
ICE , COLLECTOR-EMITTER CURRENT (A)
+25
-25
TC, CASE TEMPERATURE (oC)
30
25
20
+25oC
800
600
15
+175oC
+175oC
400
10
5
0
2
4
6
8
200
10
0
FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT AS A FUNCTION OF INDUCTANCE
2
4
6
8
INDUCTANCE (mH)
INDUCTANCE (mH)
FIGURE 12. SELF CLAMPED INDUCTIVELY SWITCHING
ENERGY AS A FUNCTION OF INDUCTANCE
3-69
10
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves (Continued)
IG REF = 1.022mA, RL = 1.2Ω, TC = +25oC
C, CAPACITANCE (pF)
1400
1200
CIES
800
600
COES
400
200
CRES
5
10
5
VCE = 12V
8
4
6
4
2
2
1
0
0
0
20
10
FIGURE 14. GATE CHARGE WAVEFORMS
100
350
ICER = 10mA
BVCER , COLLECTOR-EMITTER
BKDN VOLTAGE (V)
0.5
t1
0.2
PD
10-1
40
30
QG, GATE CHARGE (nC)
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE
ZθJC , NORMALIZED THERMAL RESPONSE
3
VCE = 8V
VCE = 4V
25
20
10
15
VCE , COLLECTOR-TO-EMITTER VOLTAGE (V)
0
6
VGE, GATE-EMITTER VOLTAGE (V)
FREQUENCY = 1MHz
1000
12
VCE, COLLECTOR-EMITTER VOLTAGE (V)
1600
0.1
t2
0.05
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.02
0.01
10-2
345
TC = +25oC AND +175oC
340
SINGLE PULSE
335
10-5
10-3
10-1
0
101
2000
4000
6000
8000
10000
RGE , GATE-TO-EMITTER RESISTANCE (V)
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF
GATE - EMITTER RESISTANCE
FIGURE 15. NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
Test Circuits
RL
2.3mH
VDD
L = 550µH
C
C
RGEN = 25Ω
1/RG = 1/RGEN + 1/RGE
RG
RGEN = 50Ω
DUT
5V
G
DUT
G
+
-
10V
VCC
300V
RGE = 50Ω
E
E
FIGURE 17. USE TEST CIRCUIT
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
3-70
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
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Spec Number
3-71
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