RF ATC800A0R8BT 60w gan wideband power amplifier Datasheet

RF3932
60W GaN WIDEBAND POWER AMPLIFIER
Package: Hermetic 2-Pin Flanged Ceramic
Features





Broadband Operation DC to
3.5GHz
Advanced GaN HEMT
Technology
Advanced Heat-Sink
Technology
Small Signal Gain = 14dB at
2GHz
48V Operation Typical
Performance
RF IN
VG
Pin 1 ( CUT )
RF OUT
VD
Pin 2
GND
BASE
• Output Power 75W at P3dB
Functional Block Diagram
•Drain Efficiency 68% at P3dB
• -40°C to 85°C Operation
Applications






Commercial Wireless
Infrastructure
Cellular and WiMAX
Infrastructure
Civilian and Military Radar
General Purpose Broadband
Amplifiers
Public Mobile Radios
Industrial, Scientific, and
Medical
Product Description
The RF3932 is a 48V, 60W high power discrete amplifier designed for commercial
wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an
advanced high power density Gallium Nitride (GaN) semiconductor process, these
high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3932 is an unmatched GaN transistor, packaged in a hermetic flanged ceramic package. This package provides
excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished by incorporating simple,
optimized matching networks external to the package that provide wideband gain
and power performance in a single amplifier.
Ordering Information
RF3932S2
RF3932SB
RF3932SQ
RF3932SR
RF3932TR7
RF3932PCK-411
2-Piece sample bag
5-Piece bag
25-Piece bag
100 Pieces on 7” short reel
750 Pieces on 7” reel
Fully assembled evaluation board optimized for 2.14GHz; 48V
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
DS120406
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
1 of 14
RF3932
Absolute Maximum Ratings
Parameter
Rating
Unit
Drain Voltage (VD)
150
V
Gate Voltage (VG)
-8 to +2
V
Gate Current (IG)
39
mA
Operational Voltage
65
V
Ruggedness (VSWR)
10:1
Storage Temperature Range
-55 to +125
°C
Operating Temperature Range (TC)
-40 to +85
°C
200
°C
Operating Junction Temperature (TJ)
Human Body Model
Class 1A
MTTF (TJ < 200°C, 95% Confidence Limits)*
3 x 106
Hours
Thermal Resistances, RTH (junction to case)
measured at TC = 85°C, DC bias only
2.6
°C/W
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
*MTTF - median time to failure for wear-out failure mode (30% IDSS
degradation) which is determined by the technology process reliability. Refer
to product qualification report for FIT (random) failure rate.
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device voltage and
current must not exceed the maximum operating values specified in the table
below.
Bias Conditions should also satisfy the following expression:
PDISS < (TJ - TC) / RTH J-C and TC = TCASE
Specification
Min.
Typ.
Max.
Parameter
Unit
Condition
Recommended Operating
Conditions
Drain Voltage (VDSQ)
28
Gate Voltage (VGSQ)
-4.5
Drain Bias Current
-3.7
48
V
-2.5
V
3500
MHz
220
Frequency of Operation
DC
mA
Capacitance
CRSS
5
pF
VG = -8V, VD = OV
CISS
23
pF
VG = -8V, VD = OV
COSS
16.5
pF
VG = -8V, VD = OV
2
mA
VG = -8V, VD = OV
2.5
mA
VG = -8V, VD = 48V
DC Functional Test
IG (off) - Gate Leakage
ID (off) - Drain Leakage
VGS (th) - Threshold Voltage
-4.2
V
VD = 48V, ID = 10mA
VDS(on) - Drain Voltage at high current
0.25
V
VG = OV, ID = 1.5A
-3.4
V
13
dB
CW, POUT = 47.8dBm, f = 2140MHz
60
%
CW, POUT = 47.8dBm, f = 2140MHz
-12
dB
CW, POUT = 47.8dBm, f = 2140MHz
RF Functional Test
[1], [2]
VGSQ
Gain
11
Drain Efficiency
55
Input Return Loss
2 of 14
VD = 48V, ID = 220mA
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120406
RF3932
Parameter
Specification
Min.
Typ.
Max.
Unit
21
dB
RF Typical Performance
Small Signal Gain
Small Signal Gain
Condition
[1], [2]
CW, f = 900MHz
14
dB
CW, f = 2140MHz
Output Power at PdB
48.80
dBm
CW, f = 900MHz
Output Power at P3dB
48.70
dBm
CW, f = 2140MHz
Drain Efficiency at P3dB
68
%
CW, f = 900MHz
Drain Efficiency at P3dB
66
%
CW, f = 2140MHz
[1] Test Conditions: CW Operation, VDSQ = 48V, IDQ = 220mA, T = 25ºC
[2] Performance in a standard tuned test fixture.
DS120406
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
3 of 14
RF3932
Typical Performance in Standard 2.14GHz Tuned Test Fixture
(CW, T = 25°C, unless otherwise noted)
Efficiency vs. Output Power (f = 2140MHz)
Gain vs. Output Power (f = 2140MHz)
(Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 220mA)
(Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 220mA)
16
70
15
60
Eff 85C
Drain Efficiency (%)
%)
Eff 25C
Gain (dB)
14
13
12
Eff -25C
50
40
30
Gain 85C
Gain 25C
11
20
Gain -25C
10
10
34
36
38
40
42
44
46
48
32
34
36
38
Output Power (dBm)
Input Return Loss vs. Output Power (f = 2140MHz)
44
46
48
(Vd = 48V, Idq = 220mA)
-6
17
-8
16
-13
-14
Fixed tuned test circuit
15
-15
14
-16
13
-17
-14
12
-18
-16
11
-19
10
-20
9
-21
-10
-12
Gain (dB)
IRL, Input
nput Return
rn Loss (dB)
42
Small Signal Performance vs. Frequency, Pout = 30dBm
(Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 220mA)
-18
-20
IRL 85C
-22
IRL 25C
-24
IRL -25C
-22
8
Gain
7
IRL
-23
6
-24
-26
5
-25
-28
4
-26
-30
3
32
34
36
38
40
42
44
46
2110
48
-27
2120
2130
17
-6
-8
13
-9
12
-10
11
11
-11
10
-12
9
-13
8
-14
7
-15
Drain
ain Efficiency (%)
14
Fixed tuned test circuit
64
Input
nput Return Loss (dB)
Fixed tuned test circuit
-7
62
Eff
60
58
-16
6
Gain
IRL
-17
18
-18
4
2120
2130
2140
Frequency (MHz)
4 of 14
2170
66
-5
15
2110
2160
(CW, Vd = 48V, Idq = 220mA)
(CW, Vd = 48V, Idq = 220mA)
5
2150
Drain Efficiency vs
vs. Frequency,
Frequency Pout = 47.8dBm
47 8dBm
Gain/IRL vs.
vs Frequency
Frequency, Pout = 47
47.8dBm
8dBm
16
2140
Frequency (MHz)
Frequency (MHz)
Gain (dB))
40
Output Power (dBm)
Input Return Loss (dB)
32
2150
2160
2170
56
2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120406
RF3932
Gain/Efficiency vs. Pout, f = 2140MHz
Gain/Efficiency vs. Pout, f = 2140MHz
16
80
15
70
15
70
14
60
14
60
13
50
13
50
12
40
12
40
11
30
11
30
10
Drain Eff
9
8
30
35
40
45
Gain
Gain (dB)
10
20
Gain
10
9
0
8
10
0
35
40
Pout, Output Power (dBm)
45
50
Pout, Output Power (dBm)
IMD3 vs. Pout
Gain vs. Pout
(2-Tone 1MHz Seperaon, Vd = 48V, Idq varied, fc = 2140MHz)
(2-Tone 1MHz Seperaon, Vd = 48V, Idq varied, fc = 2140MHz)
18
-15
-20
16
-25
Gain (dB)
IMD3, Intermodulaon
termodulaon Distoron (dBc)
20
Drain Eff
30
50
Drain Efficiency (%)
(Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 220mA)
80
Drain
ain Efficiency (%)
Gain (dB)
(CW, Vd = 48V, Idq = 220mA)
16
110mA
165mA
-30
110mA
14
165mA
220mA
220mA
275mA
275mA
330mA
-35
330mA
12
10
-40
1
1
10
10
100
100
Pout, Output Power (W-PEP)
Pout, Output Power (W-PEP)
IMD vs. Output Power
(Vd = 48V, Idq = 220mA, f1 = 2139.5MHz, f2 = 2140.5MHz)
Intermodulaon
ulaon Distoron (IMD - dBc)
-10
-15
-20
-IMD3
IMD3
-IMD5
IMD5
-IMD7
IMD7
-25
-30
-35
-40
-45
-50
-55
1
10
100
Pout, Output Power (W- PEP)
DS120406
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
5 of 14
RF3932
Typical Performance in Standard 900MHz Tuned Test Fixture
(CW, T = 25°C, unless otherwise noted)
Small Signal Performance vs. Frequency, Pout = 30dBm
Gain/IRL vs. Frequency, Pout = 47.8dBm
(Vd = 48V, Idq = 220mA)
(CW, Vd = 48V, Idq = 220mA)
Fixed tuned test circuit
22
-10
22
-3
21
-4
-11
Fixed tuned test circuit
-5
20
-6
19
-7
18
-8
17
-9
16
Gain (dB)
21
Inputt Return Loss (dB)
Gain (dB)
20
-10
Gain
15
IRL
14
880
890
900
910
-12
19
13
-13
18
-14
17
-15
16
-16
15
-17
14
-18
13
-19
-20
20
12
-11
11
-12
10
IRL
Gain
-21
-22
880
920
Input Return
turn Loss (dB)
23
890
900
910
920
Frequency (MHz)
Frequency (MHz)
Drain Efficiency vs. Frequency, Pout = 47.8dBm
Gain/Efficiency vs. Pout, f = 900MHz
(CW, Vd = 48V, Idq = 220mA)
(CW, Vd = 48V, Idq = 220mA)
73
26
80
24
70
22
60
20
50
18
40
Fixed tuned test circuit
71
Gain (dB)
Drain Efficiency (%))
67
65
63
61
16
Eff
59
30
Gain
Drain Eff
14
Drain Efficiency (%)
69
20
57
12
55
880
890
900
910
10
38
920
40
42
44
46
48
50
Pout, Output Power (dBm)
Frequency (MHz)
IMD3 vs. Pout
(2-Tone 1MHz Seperaon, Vd = 48V, Idq varied, fc = 900MHz)
Gain/Efficiency vs. Pout, f = 900MHz
24
70
22
60
20
50
18
40
16
30
Gain
Drain Eff
14
20
IMD3, Intermodulaon
ntermodulaon Distoron (dBc)
-10
80
Drain Efficiency
ciency (%)
Gain (dB)
(Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 220mA)
26
-15
-20
-25
-30
110mA
-35
165mA
-40
220mA
275mA
-45
330mA
10
12
38
40
42
44
46
48
50
-50
1
10
100
Pout, Output Power (dBm)
Pout, Output Power (W-PEP)
6 of 14
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120406
RF3932
Gain vs. Pout
IMD vs. Output Power
(2-Tone 1MHz Separaon, Vd = 48V, Idq varied, fc = 900MHz)
(Vd = 48V, Idq = 220mA, f1 = 899.5MHz, f2 = 900.5MHz)
-10
24
Intermodulaon
laon Distoron (IMD - dBc)
-IMD3
23
Gain (dB)
22
21
20
110mA
19
165mA
220mA
18
275mA
330mA
10
Pout, Output Power (W-PEP)
DS120406
-20
IMD3
-IMD5
IMD5
-IMD7
IMD7
-25
-30
-35
-40
-45
-50
-55
17
1
-15
100
1
10
100
Pout, Output Power (W- PEP)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
7 of 14
RF3932
Package Drawing
(Package Style: Flanged Ceramic)
2
3
1
All dimensions in mm.
Pin
1
2
3
8 of 14
Function
Gate
Drain
Source
Description
Gate - VG input
Drain - VD RF Output
Source - Ground Base
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120406
RF3932
Bias Instruction for RF3932 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.
Evaluation board requires additional external fan cooling.
Connect all supplies before powering evaluation board.
1.
2.
3.
4.
5.
Connect RF cables at RFIN and RFOUT.
Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal.
Apply -8V to VG.
Apply 48V to VD.
Increase VG until drain current reaches 220mA or desired bias point.
6. Turn on the RF input.
DS120406
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
9 of 14
RF3932
2.14GHz Evaluation Board Schematic
9*$7(
9'5$,1
&
&
&
&
&
&
&
&
&
5
&
-
5),1
VWULS
5)
&
&
&
VWULS
-
5)287
&
&
2.14GHz Evaluation Board Bill of Materials
10 of 14
Component
Value
Manufacturer
Part Number
C1
10pF
ATC
ATC800A100JT
C2, C10, C11, C15
33pF
ATC
ATC800A330JT
C3,C14
0.1F
Murata
GRM32NR72A104KA01L
C4,C13
4.7F
Murata
GRM55ER72A475KA01L
C5
100F
Panasonic
ECE-V1HA101UP
C6
2.2pF
ATC
ATC800A2R2BT
C7, C8
0.8pF
ATC
ATC800A0R8BT
C9
3.0pF
ATC
ATC800A3R0BT
C12
100F
Panasonic
EEV-TG2A101M
R1
10
Panasonic
ERJ-8GEYJ100V
C16, C17, C18, C19
Not used
-
-
PCB
RO4350, 0.030" thick
dielectric
Rogers
-
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120406
RF3932
2.14GHz Evaluation Board Layout
Device Impedances
Frequency (MHz)
Z Source ()
2110
2.56 - j4.27
Z Load (
4.76 + j0.7
2140
2.45 - j3.94
4.77 + j1.3
2170
2.36 - j3.6
4.80 + j1.9
Note: Device impedances reported are the measured evaluation board impedances chosen for a trade-off of efficiency, peak power, and linearity
performance across the entire frequency bandwidth.
DS120406
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
11 of 14
RF3932
900MHz Evaluation Board Schematic
900MHz Evaluation Board Bill of Materials
Component
12 of 14
Value
Manufacturer
Part Number
C1, C2, C10, C11
68pF
ATC
ATC100B680JT
C3,C14
0.1F
Murata
GRM32NR72A104KA01L
C4,C13
4.7F
Murata
GRM55ER72A475KA01L
C6
18pF
ATC
ATC800A180JT
C7
15pF
ATC
ATC800A150JT
C8
6.8pF
ATC
ATC100B6R8CT
C9
2.0pF
ATC
ATC100B2R0CT
C12
330F
Panasonic
EEU-FC2A331
C5
100F
Panasonic
ECE-V1HA101UP
R1
10
Panasonic
ERJ-8GEYJ100V
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120406
RF3932
900MHz Evaluation Board Layout
Device Impedances
Frequency (MHz)
Z Source ()
Z Load (
880
1.16 + j1.1
12.68 + j6.5
900
1.30 + j1.5
13.30 + j7.2
920
1.60 + j1.6
14.00 + j7.9
Note: Device impedances reported are the measured evaluation board impedances chosen for a trade-off of efficiency, peak power, and linearity
performance across the entire frequency bandwidth.
DS120406
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
13 of 14
RF3932
Device Handling/Environmental Conditions
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or
evaluation boards.
GaN HEMT Capacitances
The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies.
These capacitances exist across all three terminals of the device. The physical manufactured characteristics of
the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These
capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances
measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step.
Any internal matching is included in the terminal capacitance measurements. The capacitance values presented
in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse
(CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows:
CISS = CGD + CGS
COSS = CGD + CDS
CRSS = CGD
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of
the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken
to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care
not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain
current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the
operational characteristics for this device, considering manufacturing variations and expected performance.
The user may choose alternate conditions for biasing this device based on performance trade off.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of
the die. At the same time, the package temperature is measured using a thermocouple touching the backside of
the die embedded in the device heatsink but sized to prevent the measurement system from impacting the
results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated.
In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or
below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the
thermal resistance from ambient to the back of the package including heatsinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device.
14 of 14
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120406
Similar pages