AOP610 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOP610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses. It is ESD protected. Standard product AOP610 is Pb-free (meets ROHS & Sony 259 specifications). AOP610L is a Green Product ordering option. AOP610 and AOP610L are electrically identical. n-channel p-channel VDS (V) = 30V -30V -6.2A (V GS=10V) ID = 7.7A (VGS=10V) RDS(ON) RDS(ON) < 24mΩ (VGS=10V) < 37m Ω (VGS = -10V) < 42mΩ (VGS=4.5V) < 60m Ω (VGS = -4.5V) ESD rating: 1500V (HBM) D2 PDIP-8 S2/A G2 S1 G1 1 2 3 4 8 7 6 5 D2/K D2/K D1 D1 N-ch D1 K2 G2 G1 P-ch S2 A2 n-channel p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 V Gate-Source Voltage ±20 GS Continuous Drain Current A Pulsed Drain Current TA=25°C ID IDM TA=70°C B TA=25°C Power Dissipation Avalanche Current B Repetitive avalanche energy 0.1mH Junction and Storage Temperature Range 6.1 -4.9 V A 2.3 1.45 1.45 15 20 A 11 20 mJ -55 to 150 -55 to 150 °C Max Thermal Characteristics: n-channel+schottky and p-channel Symbol Parameter A t ≤ 10s Maximum Junction-to-Ambient RθJA A Steady-State Maximum Junction-to-Ambient RθJL Steady-State Maximum Junction-to-Lead C A t ≤ 10s Maximum Junction-to-Ambient RθJA A Steady-State Maximum Junction-to-Ambient C RθJL Steady-State Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. -6.2 -30 EAR TJ, TSTG ±20 7.7 Units V 30 IAR B Max p-channel -30 2.3 PD TA=70°C S1 W Typ n-ch n-ch n-ch 45 78 30 55 95 40 Units °C/W °C/W °C/W p-ch p-ch p-ch 38.5 78 28 55 95 40 °C/W °C/W °C/W AOP610 N-Channel+Schottky Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 20 VGS=4.5V, I D=4A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current VDS=5V, ID=7.7A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time 50 V 10 µA 10 µA 2 3 V 20 24 29 35 34 42 A 18 543 mΩ mΩ S 0.5 1 V 3 A 630 pF VGS=0V, VDS=15V, f=1MHz 142 VGS=0V, VDS=0V, f=1MHz 2.1 3 Ω 11 15 nC 5.3 7 nC pF 76 VGS=10V, VDS=15V, I D=7.7A VGS=10V, VDS=15V, RL=1.9Ω, RGEN=3Ω pF 1.9 nC 4 nC 4.7 7 ns 4.9 10 ns 16.2 22 ns 3.5 7 ns ns nC tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=7.7A, dI/dt=100A/µs 15.7 20 Body Diode Reverse Recovery Charge IF=7.7A, dI/dt=100A/µs 7.9 10 Qrr Units 125 TJ=125°C Static Drain-Source On-Resistance Coss 2 TJ=55°C VGS=10V, I D=7.7A IS Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. RθJL and RθJC are equivalent terms referring to thermal resistance from junction to drain lead. D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. Rev 0: October 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOP610 N-CH+SCHOTTKY TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 5V 10V 4.5V 25 VDS=5V 16 4V 12 ID(A) ID (A) 20 15 3.5V 8 125°C 10 4 5 VGS=3V 25°C 0 0 0 1 2 3 4 0 5 0.5 1.5 2 2.5 3 3.5 4 4.5 150 175 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 1.6 40 Normalized On-Resistance VGS=4.5V 35 RDS(ON) (mΩ) 1 30 25 20 15 VGS=10V 1.5 VGS=10V ID=7.7A 1.4 1.3 VGS=4.5V ID=4A 1.2 1.1 1 0.9 0.8 10 0 5 10 15 0 20 25 50 75 100 125 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 1.0E+01 ID=7.7A 60 125°C 1.0E+00 IS Amps RDS(ON) (mΩ) 50 125°C 40 30 25°C 1.0E-01 1.0E-02 20 25°C 1.0E-03 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body diode characteristics 1.0 AOP610 N-CH+SCHOTTKY TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 800 Capacitance (pF) VGS (Volts) 8 f=1MHz VGS=0V 900 VDS=15V ID=7.7A 6 4 Ciss 700 600 500 400 Coss 300 200 2 100 Crss 0 0 0 2 4 6 8 10 0 12 Qg (nC) Figure 7: Gate-Charge characteristics 100 ID (Amps) 20 25 30 TJ(Max)=150°C TA=25°C 15 100µs 10µs 10ms 0.1s 1 15 20 Power W 1ms 10 10 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C RDS(ON) limited 5 1s 10 5 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AOP610 P-Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V 30 RDS(ON) Static Drain-Source On-Resistance VGS=-10V, I D=-6.2A TJ=125°C VGS=-4.5V, I D=4A Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-6.2A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Qrr V TJ=55°C gFS Units -1 Zero Gate Voltage Drain Current Coss Max VDS=-24V, VGS=0V IDSS IS Typ -5 -1.8 10 µA -3 V A 30.5 37 43 52 47 60 mΩ -1 V 3 A 1250 pF 12.5 179 pF 134 VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, I D=-6.2A mΩ S -0.77 1040 VGS=0V, VDS=-15V, f=1MHz µA pF 5 10 Ω 16.8 22 nC 8.7 12 nC 3.4 nC 5 nC 9 12 ns 5.7 11 ns 22.7 30 ns 10.2 20 ns IF=-6.2A, dI/dt=100A/µs 21.7 27 IF=-6.2A, dI/dt=100A/µs 13.6 18 ns nC VGS=-10V, VDS=-15V, RL=2.5Ω, RGEN=3Ω A: The value of R θJA is measured with the device mounted on 1in22 FR-4 board with 2oz. Copper, in a still air environment with TAA =25°C. The value in θJA any given application depends on the user's specific design. The current rating is based the t≤ 10s thermal rating. rating. value in any a given application depends on the user'sboard specific board design. The current ratingon is based on the t≤ 10sresistance thermal resistance B: Repetitive rating, pulse width limited by junction temperature. is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. RθJL and RθJC are equivalent terms referring to C. The R θJA θJA θJL thermal resistance from junction to drain lead. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. D. The static characteristics Figures 1 to 6,12,14 are on obtained using 80µswith pulses, cyclein0.5% E. These tests are performedinwith the device mounted 1 in2 FR-4 board 2oz.duty Copper, a stillmax. air environment with TA=25°C. The SOA E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve curve provides a single pulse rating. provides a single pulse rating. F. Rev 0: October 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOP610 P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 30 -10V -6V 20 15 -ID(A) -4V -5V 20 -ID (A) VDS=-5V -4.5V 25 -3.5V 15 10 10 VGS=-3V 125°C 5 5 25°C -2.5V 0 0 0 1 2 3 4 5 0 1 90 3 4 5 6 1.60 Normalized On-Resistance 80 70 RDS(ON) (mΩ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics VGS=-4.5V 60 50 40 VGS=-10V 30 VGS=-10V ID=-6.2A 1.40 VGS=-4.5V ID=-4A 1.20 1.00 0.80 20 0 5 10 15 20 0 25 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 1.0E+01 ID=-6.2A 90 1.0E+00 80 1.0E-01 125°C 1.0E-02 -IS (A) RDS(ON) (mΩ) 70 60 125°C 50 1.0E-03 40 1.0E-04 30 25°C 25°C 1.0E-05 20 1.0E-06 10 3 4 5 6 7 8 9 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOP610 P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=-15V ID=-6.2A 1250 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss Crss 250 0 0 0 4 8 12 16 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 25 30 0.1s 30 Power (W) -ID (Amps) 20 TJ(Max)=150°C TA=25°C 10µs 100µs RDS(ON) limited 1ms 10ms 1s 20 10 10s DC 0 0.001 0.1 0.1 15 40 TJ(Max)=150°C, TA=25°C 1.0 10 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 5 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000