Databook.fxp 1/13/99 2:09 PM Page B-48 B-48 01/99 IFN6449, IFN6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: IFN6449 Static Electrical Characteristics Min Max IFN6450 Min Max IFN6449 IFN6450 – 100 V – 100 V – 300 V – 200 V 10 mA 10 mA 800 mW 800 mW 6.4 mW/°C 6.4 mW/°C Process NJ42 Unit Test Conditions Gate Drain Breakdown Voltage V(BR)GDO – 300 – 200 V IG = – 10 µA, I S = ØA Gate Source Breakdown Voltage V(BR)GSO – 100 – 100 V IG = – 10 µA, ID = ØA Gate Reverse Current IGSS – 100 nA VGS = – 80V, VDS = ØV – 100 µA VGS = – 80V, VDS = ØV Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) TA = 150°C –2 – 15 –2 – 15 V VDS = 30V, ID = 4 nA IDSS 2 10 2 10 mA VDS = 30V, VGS = ØV Common Source Forward Transfer Transmittance | Yfs | 0.5 3 0.5 3 mS VDS = 30V, VGS = ØV f = 1 kHz Common Source Output Conductance gos 100 100 µS VDS = 30V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 10 10 pF VDS = 30V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 5 5 pF VDS = 30V, VGS = ØV f = 1 MHz Dynamic Electrical Characteristics 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 TOÐ39 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate & Case www.interfet.com