InterFET IFN6450 N-channel silicon junction field-effect transistor Datasheet

Databook.fxp 1/13/99 2:09 PM Page B-48
B-48
01/99
IFN6449, IFN6450
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
¥ High Voltage
Reverse Gate Source Voltage
Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
At 25°C free air temperature:
IFN6449
Static Electrical Characteristics
Min
Max
IFN6450
Min
Max
IFN6449
IFN6450
– 100 V
– 100 V
– 300 V
– 200 V
10 mA
10 mA
800 mW
800 mW
6.4 mW/°C 6.4 mW/°C
Process NJ42
Unit
Test Conditions
Gate Drain Breakdown Voltage
V(BR)GDO
– 300
– 200
V
IG = – 10 µA, I S = ØA
Gate Source Breakdown Voltage
V(BR)GSO
– 100
– 100
V
IG = – 10 µA, ID = ØA
Gate Reverse Current
IGSS
– 100
nA
VGS = – 80V, VDS = ØV
– 100
µA
VGS = – 80V, VDS = ØV
Gate Source Cutoff Voltage
VGS(OFF)
Drain Saturation Current (Pulsed)
TA = 150°C
–2
– 15
–2
– 15
V
VDS = 30V, ID = 4 nA
IDSS
2
10
2
10
mA
VDS = 30V, VGS = ØV
Common Source Forward
Transfer Transmittance
| Yfs |
0.5
3
0.5
3
mS
VDS = 30V, VGS = ØV
f = 1 kHz
Common Source Output Conductance
gos
100
100
µS
VDS = 30V, VGS = ØV
f = 1 kHz
Common Source Input Capacitance
Ciss
10
10
pF
VDS = 30V, VGS = ØV
f = 1 MHz
Common Source
Reverse Transfer Capacitance
Crss
5
5
pF
VDS = 30V, VGS = ØV
f = 1 MHz
Dynamic Electrical Characteristics
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
TOÐ39 Package
Pin Configuration
Dimensions in Inches (mm)
1 Source, 2 Drain, 3 Gate & Case
www.interfet.com
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