Bourns BD241B Npn silicon power transistor Datasheet

BD241, BD241A, BD241B, BD241C
NPN SILICON POWER TRANSISTORS
●
Designed for Complementary Use with the
BD242 Series
●
40 W at 25°C Case Temperature
●
3 A Continuous Collector Current
B
1
●
5 A Peak Collector Current
C
2
●
Customer-Specified Selections Available
E
3
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-emitter voltage (RBE = 100 Ω)
BD241B
Collector-emitter voltage (IC = 30 mA)
VCER
115
45
V CEO
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
60
80
V
V
100
BD241C
Continuous collector current
90
BD241C
BD241B
Emitter-base voltage
70
BD241
BD241A
UNIT
55
BD241
BD241A
VALUE
VEBO
5
V
IC
3
A
ICM
5
A
IB
1
A
Ptot
40
W
Ptot
2
W
½LIC2
32
mJ
°C
Tj
-65 to +150
Tstg
-65 to +150
°C
TL
250
°C
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD241, BD241A, BD241B, BD241C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICES
ICEO
IEBO
hFE
V CE(sat)
VBE
hfe
|hfe |
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC = 30 mA
MIN
IB = 0
(see Note 5)
BD241
45
BD241A
60
BD241B
80
BD241C
100
TYP
MAX
V
VCE = 55 V
VBE = 0
BD241
0.2
Collector-emitter
VCE = 70 V
VBE = 0
BD241A
0.2
cut-off current
VCE = 90 V
VBE = 0
BD241B
0.2
VCE = 115 V
VBE = 0
BD241C
0.2
Collector cut-off
VCE = 30 V
IB = 0
BD241/241A
0.3
current
VCE = 60 V
IB = 0
BD241B/241C
0.3
VEB =
5V
IC = 0
Forward current
VCE =
4V
IC =
1A
transfer ratio
VCE =
4V
IC =
3A
0.6 A
IC =
3A
4V
IC =
3A
Emitter cut-off
current
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
IB =
VCE =
UNIT
mA
mA
1
mA
(see Notes 5 and 6)
1.2
V
(see Notes 5 and 6)
1.8
V
25
(see Notes 5 and 6)
10
VCE = 10 V
IC = 0.5 A
f = 1 kHz
20
VCE = 10 V
IC = 0.5 A
f = 1 MHz
3
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
3.125
°C/W
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = 1 A
IB(on) = 0.1 A
IB(off) = -0.1 A
toff
Turn-off time
VBE(off) = -3.7 V
RL = 20 Ω
tp = 20 µs, dc ≤ 2%
0.3
µs
1
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD241, BD241A, BD241B, BD241C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE = 4 V
tp = 300 µs, duty cycle < 2%
TC = 25°C
TC = 80°C
100
10
0·01
0·1
1·0
10
TCS631AB
10
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS631AH
1000
hFE - DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
1·0
0·1
IC =
IC =
IC =
IC =
100 mA
300 mA
1A
3A
0·01
0·1
IC - Collector Current - A
1·0
10
100
1000
IB - Base Current - mA
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
1·0
TCS631AC
VBE - Base-Emitter Voltage - V
VCE = 4 V
TC = 25°C
0·9
0·8
0·7
0·6
0·5
0·01
0·1
1·0
10
IC - Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD241, BD241A, BD241B, BD241C
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAS631AG
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
10
1·0
0·1
BD241
BD241A
BD241B
BD241C
0·01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS631AA
Ptot - Maximum Power Dissipation - W
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD241, BD241A, BD241B, BD241C
NPN SILICON POWER TRANSISTORS
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
1,70
1,07
0,97
0,61
1
2
14,1
12,7
3
2,74
2,34
5,28
4,88
VERSION 1
0,64
0,41
2,90
2,40
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MDXXBE
5
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