HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching ADE-208-730(Z) Rev 0 Dec. 1998 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package. Ordering Information Type No. Laser Mark Package Code HSB0104YP E4 CMPAK-4 Outline 4 3 1 2 (Top View) 1 2 3 4 Anode Anode Cathode Cathode HSB0104YP Absolute Maximum Ratings (Ta = 25°C) *1 Item Symbol Value Unit Repetitive peak reverse voltage VRRM 40 V Average rectified current Io 100 mA 3 A *2 Non-Repetitive peak forward surge current IFSM Junction temperature Tj 125 °C Storage temperature Tstg -55 to +125 °C Note: Note: 1. Per one device 2. 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.58 V I F = 100 mA Reverse current IR — — 50 µA VR = 40V Capacitance C — 20 — pF VR = 0V, 1=1MHz 2 HSB0104YP Main Characteristic 1.0 10 2 Pulse test Pulse test -1 Reverse current I R (µA) Forward current IF (A) 10 10 -2 10-3 10 -4 10 1.0 10 -1 -5 10 10-6 -2 0 0.2 0.4 0.6 0.8 1.0 Forward voltage V F (V) 10 0 10 20 30 40 50 Reverse voltage V R (V) Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage 2 10 Capacitance C (pF) f=1MHz 10 1.0 1.0 10 40 Reverse voltage V R (V) Fig.2 Capacitance Vs. Reverse voltage 3 HSB0104YP Package Dimensions Unit : mm 2.0 ± 0.2 3 1.25 ± 0.1 4 E4 1 2 0.3± 0.05 0.2 0.65 0.65 1.3 ± 0.2 4 0.9 ± 0.1 0.3± 0.05 0.425 Laser Mark 0.3± 0.05 + 0.1 0.16– 0.06 2.1 ± 0.2 0.65 0.65 0.3± 0.05 0.425 1.3 ± 0.2 0 - 0.1 1 2 3 4 Hitachi Code JEDEC Code EIAJ Code Weight (g) Anode Anode Cathode Cathode CMPAK-4 — — 0.006 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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