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DRV2510-Q1
SLOS919A – JUNE 2016 – REVISED JUNE 2016
DRV2510-Q1 3-A Automotive Haptic Driver for Solenoids and Voice Coils with Integrated
Diagnostics
1 Features
3 Description
•
•
•
•
•
•
The DRV2510-Q1 device is a high current haptic
driver specifically designed for inductive loads, such
as solenoids and voice coils.
1
•
•
•
•
•
Wide Operating Voltage (5 V - 18 V)
Integrated Load-Dump Protection (40 V)
High Current Drive (3 A Peak)
Low RDS(on), Full H-Bridge Output
Integrated Diagnostics
Integrated Fault Protection
– 40-V Load Dump Protection per ISO-7637-2
– Short-Circuit Protection
– Over-temperature Protection
– Over-Voltage and Under-Voltage Protection
– Fault Reporting
Analog Input
I2C Communication
Dedicated Interrupt Pin
Automotive Qualified (Q100)
–40ºC to 125ºC Ambient Temperature Range
The output stage consists of a full H-bridge capable
of delivering 3 A of peak current.
The DRV2510-Q1 device provides protection
functions such as undervoltage lockout, over-current
protection and over-temperature protection.
The DRV2510-Q1 device is automotive qualified. The
integrated load-dump protection reduces external
voltage clamp cost and size, and the onboard load
diagnostics report the status of the actuator through
the digital interface.
Device Information(1)
PART NUMBER
DRV2510-Q1
•
•
Electromagnetic Actuator Driver
– Voice Coil
– Solenoid
Mechanical Button Replacement
Automotive Haptic Applications
– Infotainment
– Center-Console
– Steering Wheel
– Door-Panel
– Seats
BODY SIZE (NOM)
5.00 mm x 4.40 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
2 Applications
•
PACKAGE
HTSSOP (16)
Simplified Schematic
VDD
BSTP
OUT+
EN
STDBY
INTZ
SDA
M
SCL
Sole noid/
Voice-Coil
IN+
INOUT±
REG
GND
BSTN
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DRV2510-Q1
SLOS919A – JUNE 2016 – REVISED JUNE 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
4
4
4
4
5
5
6
6
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Timing Requirements ................................................
Switching Characteristics ..........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 7
7.1 Overview ................................................................... 7
7.2 Functional Block Diagram ......................................... 7
7.3
7.4
7.5
7.6
8
Feature Description................................................... 8
Device Functional Modes........................................ 11
Programming........................................................... 11
Register Map........................................................... 15
Application and Implementation ........................ 18
8.1 Application Information............................................ 18
8.2 Typical Applications ................................................ 18
9 Power Supply Recommendations...................... 22
10 Layout................................................................... 22
10.1 Layout Guidelines ................................................. 22
10.2 Layout Example .................................................... 22
11 Device and Documentation Support ................. 23
11.1
11.2
11.3
11.4
Device Support ....................................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
23
23
23
23
12 Mechanical, Packaging, and Orderable
Information ........................................................... 24
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (June 2016) to Revision A
•
2
Page
Released as Production Data. ............................................................................................................................................... 1
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SLOS919A – JUNE 2016 – REVISED JUNE 2016
5 Pin Configuration and Functions
TWP
HTSSOP 16-Pin With Thermal Pad
Top View
GND
1
16
GND
EN
2
15
VDD
REG
3
14
INTZ
SDA
4
13
BSTP
SCL
5
12
OUT+
IN+
6
11
OUT-
IN-
7
10
BSTN
STDBY
8
9
GND
Pin Functions
PIN
NAME
GND
NO.
TYPE
DESCRIPTION
1, 9, 16
P
Ground.
EN
2
I
Device enable pin.
REG
3
P
Internally generated gate voltage supply. Not to be used as a supply or connected to any component other than a 1
µF X7R ceramic decoupling capacitor and the MODE resistor divider.
SDA
4
I
I2C data.
SCL
5
I
I2C clock.
IN+
6
I
Positive differential input.
IN-
7
I
Negative differential input.
STDBY
8
I
Standby pin.
BSTN
10
P
Boot strap for negative output, connect to 220 nF X5R, or better ceramic cap to OUT-.
OUT-
11
O
Negative output.
OUT+
12
O
Positive output.
BSTP
13
P
Boot strap for positive output, connect to 220 nF X5R, or better ceramic cap to OUT+.
INTZ
14
O
General fault reporting. Open drain.
INTZ = High, normal operation
INTZ = Low, fault condition
VDD
15
P
Power supply.
G
Connect to GND for best system performance. If not connected to GND, leave floating.
Thermal Pad
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
VDD DC supply voltage range
Supply voltage
VDD pulsed supply voltage range. t < 400 ms exposure
MIN
MAX
–0.3
30
–1
40
VDD supply voltage ramp rate
Input voltage, VI
Current
V
15
SCL, SDA, EN
–0.3
5
IN+, IN-, STDBY
–0.3
6.5
DC current on VDD, GND, OUT+, OUT-
–4
4
Maximum current in all input pins
–1
1
Maximum sink current for open-drain pins
V/ms
V
A
mA
7
Operating free-air temperature, TA
–40
125
Storage temperature range, Tstg
–55
150
(1)
UNIT
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)
±3500
Charged device model (CDM), per JEDEC specification JESD22-C101,
all pins (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
5
18
UNIT
VDD
Supply voltage. VDD.
VIH
High-level input voltage. SDA, SCL, STDBY, EN.
VIL
Low-level input voltage. SDA, SCL, STDBY, EN
0.7
V
VOL
Low-level output voltage
0.4
V
VOH
High-level output voltage
IIH
High-level input current. SDA, SCL, STDBY, EN
RL
Minimum load Impedance
CB
Load capacitance for each bus line (SDA/SCL)
2.1
V
V
2.4
V
50
µA
400
pF
Ω
1.5
6.4 Thermal Information
DRV2510-Q1
THERMAL METRIC (1)
PWP (HTSSOP)
UNIT
{16} PINS
RθJA
Junction-to-ambient thermal resistance
39.4
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
24.9
°C/W
RθJB
Junction-to-board thermal resistance
20
°C/W
ψJT
Junction-to-top characterization parameter
0.6
°C/W
ψJB
Junction-to-board characterization parameter
19.8
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
2
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.5 Electrical Characteristics
TA = 25°C, AVCC = VDD = 12 V, RL = 5 Ω (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
| VOS |
Output offset voltage (measured
differentially)
VI = 0 V, Gain = 20 dB
IVDD
Quiescent supply current
No load or filter
16
IVDD(SD)
Quiescent supply current in shutdown
mode
No load or filter
5
IVDD(STD
Quiescent supply current in standby mode
No load or filter
7
mA
Drain-source on-state resistance,
measured pin to pin
TJ = 25°C
180
mΩ
–25
25
mV
mA
20
µA
BY)
rDS(on)
G
Gain
19
20
21
25
26
27
31
32
33
35
36
37
6.4
6.9
7.4
P(o) = 1 W
VREG
Regulator voltage
VO
Output voltage (measured differentially)
PSRR
Power supply ripple rejection
VICMIN
VICMAX
CMRR
Common-mode rejection ratio
fOSC
Oscillator frequency
(with PWM duty cycle < 96%)
400
Output resistance in shutdown
10
dB
dB
V
20
V
75
dB
Input common-mode min
0.3
V
Input common-mode max
4.4
VDD = 12 V + 1 Vrms at 1 kHz
f = 1 kHz, 100 mVrms referenced to GND. Gain =
20 dB
63
dB
kHz
500
Resistance to detect a short from OUT
pin(s) to VDD or GND
MΩ
200
Ω
Open-circuit detection threshold
75
95
120
Ω
Short-circuit detection threshold
0.9
1.2
1.5
Ω
Power-on threshold
4.1
V
Thermal trip point
150
°C
Thermal hysteresis
15
°C
Over-current trip point
3.5
A
Over-voltage trip point
21
V
Over-voltage hysteresis
0.6
V
Under-voltage trip point
4
V
0.25
V
Under-voltage hysteresis
6.6 Timing Requirements
TA = 25 °C, VDD = 3.6 V (unless otherwise noted)
MIN
NOM
MAX
UNIT
400
kHz
ƒ(SCL)
Frequency at the SCL pin with no wait states
tw(H)
Pulse duration, SCL high
0.6
µs
tw(L)
Pulse duration, SCL low
1.3
µs
tsu(1)
Setup time, SDA to SCL
100
ns
th(1)
Hold time, SCL to SDA
300
ns
t(BUF)
Bus free time between stop and start condition
1.3
µs
tsu(2)
Setup time, SCL to start condition
0.6
µs
th(2)
Hold time, start condition to SCL
0.6
µs
tsu(3)
Setup time, SCL to stop condition
0.6
µs
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tw(H)
tw(L)
SCL
tsu(1)
th(1)
SDA
Figure 1. SCL and SDA Timing
SCL
tsu(2)
tsu(3)
th(2)
t(BUF)
SDA
Start Condition
Stop Condition
Figure 2. Timing for Start and Stop Conditions
6.7 Switching Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
ton-sd
Turn-on time from shutdown to
waveform
EN = Low to High, STBY = Low
tOFF-sd
Turn-off time
ton-stdby
Turn-on time from standby to
waveform
MIN
TYP
MAX
UNIT
229
ms
EN = High to Low
47
µs
EN = High, STBY = High to Low
32
µs
24.0
10
20.0
9
Standby Current (mA)
Shutdown Current (µA)
6.8 Typical Characteristics
16.0
12.0
8.0
4.0
7
6
5
0.0
4
4
6
8
10
12
14
VDD − Supply Voltage (V)
16
Figure 3. Shutdown Current vs VDD Voltage
6
8
18
4
6
8
10
12
14
VDD − Supply Voltage (V)
16
18
Figure 4. Standby Current vs VDD Voltage
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7 Detailed Description
7.1 Overview
The DRV2510-Q1 device is a high current haptic driver specifically designed for inductive loads, such as
solenoids and voice coils.
The output stage consists of a full H-bridge capable of delivering 3 A of peak current.
The design uses an ultra-efficient switching output technology developed by Texas Instruments, but with features
added for the automotive industry. The DRV2510-Q1 device provides protection functions such as undervoltage
lockout, over-current protection and over-temperature protection. This technology allows for reduced power
consumption, reduced heat, and reduced peak currents in the electrical system.
The DRV2510-Q1 device is automotive qualified. The integrated load-dump protection reduces external voltage
clamp cost and size, and the onboard load diagnostics report the status of the actuator through the digital
interface.
7.2 Functional Block Diagram
REG
VDD
BSTP
Reg
VDD
Digital Cor e
EN
OUT+
Gate
Drive
POR
Control
STDBY
SDA
Reg
Map
I 2C
SCL
INTZ
M
Thermal
Pro tection
VDD
VDD
Over-Curren t
Pro tection
Critical_Event
Inte rrupt
Control
OT
Sole noid/
Voice-Coil
VDD
Loa d
Diagno stics
Gate
Drive
OUT±
OVV
UVLO
Critical
Condition
Control
OSC
BSTN
OC
Freq_Sel
PWM
Log ic
IN+
IN-
Gai n
Control
GND
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7.3 Feature Description
7.3.1 Analog Input and Configurable Pre-amplifier
The DRV2510-Q1 device features a differential input stage that cancels common-mode noise that appears on
the inputs. The DRV2510-Q1 device also features four gain settings that are configurable via I2C. Please see the
Programming Sections for register locations.
Table 1. Gain Configuration Table
GAIN
INPUT IMPEDANCE
20 dB
60 kΩ
26 dB
30 kΩ
32 dB
15 kΩ
36 dB
9 kΩ
7.3.2 Pulse-Width Modulator (PWM)
The DRV2510-Q1 device features BD modulation scheme with high bandwidth, low noise, low distortion, and
excellent stability.
The BD modulation scheme allows for smaller ripple currents through the load. Each output switches from 0 V to
the supply voltage. With no input, the OUT+ and OUT- pins are in phase with each other so that there is little or
no current in the load. For positive differential inputs, the duty cycle of OUT+ is greater than 50% and the duty
cycle of OUT- is lower than 50% for a positive differential output voltage. The opposite is true for negative
differential inputs. The voltage accross the load sits at 0 V throughout most of the switching period, reducing the
switching current, which reduces the I2R losses in the load.
8
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No Output
OUT+
OUT-
OUT+ - OUT- 0 V
Solenoid Current 0 A
Positive Output
OUT+
OUT-
OUT+ - OUT- 0 V
Solenoid Current 0 A
Negative Output
OUT+
OUT-
OUT+ - OUT- 0 V
Solenoid Current 0 A
Figure 5. BD Mode Modulation
7.3.3 Designed for low EMI
The DRV2510-Q1 device design has minimal parasitic inductances due to the short leads on the package. This
dramatically reduces EMI that results from current passing from the die to the system PCB. The design
incorporates circuitry that optimizes output transitions that causes EMI. Follow the recommended design
requirements in the Design Requirements section.
7.3.4 Device Protection Systems
The DRV2510-Q1 device features a complete set of protection circuits carefully designed to protect the device
against permanent failures due to shorts, over-temperature, over-voltage, and under-voltage scenarios. The INTZ
pin signals if an error is detected.
Additionally, the DRV2510-Q1 device is not damaged by adjacent pin to pin shorts.
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Table 2. Fault Reporting Table
FAULT
TRIGGERING CONDITION
INTZ
ACTION
Over-current
Output short or short to VDD or GND
pulled low
output in high impedance.
I2 updated.
Over-temperature
Tj > 150 ºC
pulled low
output in high impedance.
Recovery is automatic
once the temperature
returns to a safe level.
Under-voltage
VDD < 4 V
pulled low
output in high impedance.
I2 reset.
Over-voltage
VDD > 21 V
pulled low
output in high impedance.
I2 updated.
7.3.4.1 Diagnostics
The device incorporates load diagnostic circuitry designed for detecting and determining the status of output
connections. The device supports the following diagnostics:
• Short to GND
• Short to VDD
• Short across load
• Open load
The device reports the presence of any of the short or open conditions to the system via I2C register read.
1. Load Diagnostics—The load diagnostic function runs on de-assertion of EN or when the device is in a fault
state (dc detect, overcurrent, overvoltage, undervoltage, and overtemperature). During this test, the outputs
are in a Hi-Z state. The device determines whether the output is a short to GND, short to VDD, open load, or
shorted load. The load diagnostic biases the output, which therefore requires limiting the capacitance value
for proper functioning. The load diagnostic test takes approximately 229 ms to run. Note that the check
phase repeats up to five times if a fault is present or a large capacitor to GND is present on the output. On
detection of an open load, the output still operates. On detection of any other fault condition, the output goes
into a Hi-Z state, and the device checks the load continuously until removal of the fault condition. After
detection of a normal output condition, the output starts. The load diagnostics run after every other
overvoltage (OV) event. The load diagnostic for open load only has I2C reporting. All other faults have I2C
and INTZ pin assertion.
The device performs load diagnostic tests as shown in Figure 6.
Figure 7 illustrates how the diagnostics determine the load based on output conditions.
Discharge
(75 ms)
Ramp Up
(52 ms)
Check
(50 ms)
Ramp Down
(52 ms)
Figure 6. Load Diagnostics Sequence of Events
10
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Output Conditions
Load Diagnostics
Open Load
Open Load Detected
OL Max
Normal or Open Load
Open Load (OL)
May Be Detected
Detection Threshold
OL Min
Normal
Load
Play Mode
SL Max
Shorted Load (SL)
Detection Threshold
Normal or Shorted Load
May Be Detected
SL Min
Shorted
Load
Shorted Load
Detected
Figure 7. Load Diagnostic Reporting Thresholds
2. Faults During Load Diagnostics—If the device detects a fault (overtemperature, overvoltage, undervoltage)
during the load diagnostics test, the device exits the load diagnostics, which may result in a small transient
on the output.
7.4 Device Functional Modes
The DRV2510-Q1 device has multiple power states to optimize power consumption.
7.4.1 Operation in Shutdown Mode
The NRST pin of the DRV2510-Q1 device puts the device in a shutdown mode. When NRST is asserted (logic
low), all internal blocks of the device are off to achieve ultra low power. I2C is not operational in this mode and
the output is in Hi-Z state.
7.4.2 Operation in Standby Mode
The STDBY pin of the DRV2510-Q1 device puts the device in a standby mode. When STDBY is asserted (logic
high), some internal blocks of the device are off to achieve low power while preserving the ability to wake up
quickly to achieve low latency waveform playback.
7.4.3 Operation in Active Mode
The DRV2510-Q1 device is in active mode when it has a valid supply, and it is not in either shutdown or standby
modes. In this mode the DRV2510-Q1 device is fully on and reproducing at the output the input times the gain.
7.5 Programming
7.5.1 General I2C Operation
The I2C bus employs two signals, SDA (data) and SCL (clock), to communicate between integrated circuits in a
system. The bus transfers data serially, one bit at a time. The 8-bit address and data bytes are transferred with
the most-significant bit (MSB) first. In addition, each byte transferred on the bus is acknowledged by the receiving
device with an acknowledge bit. Each transfer operation begins with the master device driving a start condition
on the bus and ends with the master device driving a stop condition on the bus. The bus uses transitions on the
data pin (SDA) while the clock is at logic high to indicate start and stop conditions. A high-to-low transition on the
SDA signal indicates a start, and a low-to-high transition indicates a stop. Normal data-bit transitions must occur
within the low time of the clock period. Figure 8 shows a typical sequence. The master device generates the 7-bit
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Programming (continued)
slave address and the read-write (R/W) bit to start communication with a slave device. The master device then
waits for an acknowledge condition. The slave device holds the SDA signal low during the acknowledge clock
period to indicate acknowledgment. When the acknowledgment occurs, the master transmits the next byte of the
sequence. Each device is addressed by a unique 7-bit slave address plus a R/W bit (1 byte). All compatible
devices share the same signals through a bidirectional bus using a wired-AND connection.
The number of bytes that can be transmitted between start and stop conditions is not limited. When the last word
transfers, the master generates a stop condition to release the bus. Figure 8 shows a generic data-transfer
sequence.
Use external pull-up resistors for the SDA and SCL signals to set the logic-high level for the bus. Pull-up resistors
between 660 Ω and 4.7 kΩ are recommended. Do not allow the SDA and SCL voltages to exceed the DRV2510Q1 supply voltage, VDD.
NOTE
The DRV2510-Q1 slave address is 0x6C (7-bit), or 1101100 in binary.
7-bit slave address
R/W A
b7 b6 b5 b4 b3 b2 b1 b0
8-bit register address (N)
b7 b6 b5 b4 b3 b2 b1 b0
A
8-bit register data for address
(N)
b7 b6 b5 b4 b3 b2 b1 b0
A
8-bit register data for address
(N)
A
b7 b6 b5 b4 b3 b2 b1 b0
Start
Stop
Figure 8. Typical I2C Sequence
The DRV2510-Q1 device operates as an I2C-slave 1.8-V logic thresholds, but can operate up to the VDD voltage.
The device address is 0x5A (7-bit), or 1011010 in binary which is equivalent to 0xB4 (8-bit) for writing and 0xB5
(8-bit) for reading.
7.5.2 Single-Byte and Multiple-Byte Transfers
The serial control interface supports both single-byte and multiple-byte R/W operations for all registers.
During multiple-byte read operations, the DRV2510-Q1 device responds with data one byte at a time and begins
at the signed register. The device responds as long as the master device continues to respond with
acknowledges.
The DRV2510-Q1 supports sequential I2C addressing. For write transactions, a sequential I2C write transaction
has taken place if a register is issued followed by data for that register as well as the remaining registers that
follow. For I2C sequential-write transactions, the register issued then serves as the starting point and the amount
of data transmitted subsequently before a stop or start is transmitted determines how many registers are written.
7.5.3 Single-Byte Write
As shown in Figure 9, a single-byte data-write transfer begins with the master device transmitting a start
condition followed by the I2C device address and the read-write bit. The read-write bit determines the direction of
the data transfer. For a write-data transfer, the read-write bit must be set to 0. After receiving the correct I2C
device address and the read-write bit, the DRV2510-Q1 responds with an acknowledge bit. Next, the master
transmits the register byte corresponding to the DRV2510-Q1 internal-memory address that is accessed. After
receiving the register byte, the device responds again with an acknowledge bit. Finally, the master device
transmits a stop condition to complete the single-byte data-write transfer.
12
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Programming (continued)
Acknowledge
A6
A5
A4
A3
A2
A1
A0
W
ACK
A7
Acknowledge
A6
A5
2
A3
A2
A0
A1
ACK
D7
D6
D5
D4
D3
D2
D1
D0
ACK
Stop
condition
Data byte
Subaddress
I C device address
and R/W bit
Start
condition
A4
Acknowledge
Figure 9. Single-Byte Write Transfer
7.5.4 Multiple-Byte Write and Incremental Multiple-Byte Write
A multiple-byte data write transfer is identical to a single-byte data write transfer except that multiple data bytes
are transmitted by the master device to the DRV2510-Q1 device as shown in Figure 10. After receiving each
data byte, the DRV2510-Q1 device responds with an acknowledge bit.
Acknowledge
A1
A0
A1
A0
W
ACK
Acknowledge
A7
A6
2
Start
condition
A1
A0
ACK
D7
D1
Acknowledge
D0
D0
ACK
First data byte
Subaddress
I C device address
and R/W bit
D6
Acknowledge
D7
ACK
Other data bytes
Acknowledge
D7
D0
ACK
Stop
condition
Last data byte
Figure 10. Multiple-Byte Write Transfer
7.5.5 Single-Byte Read
Figure 11 shows that a single-byte data-read transfer begins with the master device transmitting a start condition
followed by the I2C device address and the read-write bit. For the data-read transfer, both a write followed by a
read actually occur. Initially, a write occurs to transfer the address byte of the internal memory address to be
read. As a result, the read-write bit is set to 0.
After receiving the DRV2510-Q1 address and the read-write bit, the DRV2510-Q1 device responds with an
acknowledge bit. The master then sends the internal memory address byte, after which the device issues an
acknowledge bit. The master device transmits another start condition followed by the DRV2510-Q1 address and
the read-write bit again. On this occasion, the read-write bit is set to 1, indicating a read transfer. Next, the
DRV2510-Q1 device transmits the data byte from the memory address that is read. After receiving the data byte,
the master device transmits a not-acknowledge followed by a stop condition to complete the single-byte data
read transfer. See the note in the General I2C Operation section.
Acknowledge
A6
Start
Condition
A5
A1
A0
W
ACK
2
I C device address and
R/W bit
A7
Acknowledge
A6
A1
Subaddress
A0
ACK
Acknowledge
A6
Repeat start
condition
A5
2
A0
R
I C device address and
R/W bit
ACK
D7
Acknowledge
D0
ACK
Data Byte
Stop
Condition
Figure 11. Single-Byte Read Transfer
7.5.6 Multiple-Byte Read
A multiple-byte data-read transfer is identical to a single-byte data-read transfer except that multiple data bytes
are transmitted by the DRV2510-Q1 device to the master device as shown in Figure 12. With the exception of
the last data byte, the master device responds with an acknowledge bit after receiving each data byte.
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Programming (continued)
Acknowledge
A6
A0
W ACK
Start I2C device address
condition
and R/W bit
A7
Acknowledge
A6
A1
Subaddress
A0 ACK
A6
A5
A0
Acknowledge
Acknowledge
Acknowledge
Acknowledge
R
D0
D0
D0 ACK
Repeat start I2C device address
condition
and R/W bit
ACK
D7
ACK
First data byte
D7
Other data byte
ACK
D7
Last data byte
Stop
condition
Figure 12. Multiple-Byte Read Transfer
14
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7.6 Register Map
Table 3. Register Map Overview
REG
NO.
DEFAULT
0x00
0x00
0x01
BIT 7
BIT 6
BIT 5
BIT 4
BIT 3
0x00
OVER_TEMP
Reserved
OVER_VOLT
UNDER_VOLT
OVER_CURR
0x02
0x00
DEV_ACTIVE
STDBY
DIAG_ACTIVE
FAULT
LOAD_SHORT
0x03
0x00
BIT 2
Reserved
BIT 1
LOAD_DIAG
GAIN[1:0]
BIT 0
Reserved
Reserved
LOAD_SHORT_
GND
LOAD_OPEN
LOAD_SHORT_
VDD
Reserved
FREQ_SEL
7.6.1 Address: 0x00
Figure 13. 0x00
7
6
5
Reserved
4
3
2
LOAD_DIAG[0]
RO-0
1
0
Reserved
Table 4. Address: 0x00
BIT
FIELD
7-3
Reserved
2
1-0
TYPE
LOAD_DIAG
RO
DEFAULT DESCRIPTION
0
Shows the status of the load diagnostics.
0
An open or short has not been detected.
1
An open or short was detected.
Reserved
7.6.2 Address: 0x01
Figure 14. 0x01
7
OVER_TEMP[0
]
RO-0
6
Reserved
5
4
3
OVER_VOLT[0] UNDER_VOLT[ OVER_CURR[0
0]
]
RO-0
RO-0
RO-0
2
1
Reserved
0
Table 5. Address: 0x01
BIT
7
FIELD
OVER_TEMP
6
Reserved
5
OVER_VOLT
4
3
2-0
UNDER_VOLT
OVER_CURR
TYPE
RO
RO
RO
RO
DEFAULT DESCRIPTION
0
0
0
0
Shows the current statuts of the thermal protection
0
Temperature is below the over-temperature threshold.
1
Temperature is above the over-temperature threshold.
Shows the status of the over-voltage protection.
0
VDD voltage is below the over-voltage threshold.
1
VDD voltage is above the over-voltage threshold.
Shows the status of the under-voltage protection.
0
VDD voltage is above the under-voltage threshold.
1
VDD voltage is below the under-voltage threshold.
Shows the status of the over-current protection.
0
An over-current event has not occured.
1
Device shutdown due to over-current.
Reserved
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7.6.3 Address: 0x02
Figure 15. 0x02
7
DEV_ACTIVE[0
]
RO-0
6
STDBY[0]
RO-0
5
DIAG_ACTIVE[
0]
RO-0
4
FAULT[0]
RO-0
3
2
LOAD_SHORT[ LOAD_OPEN[0
0]
]
RO-0
RO-0
1
LOAD_SHORT
_GND[0]
RO-0
0
LOAD_SHORT
_VDD[0]
RO-0
Table 6. Address: 0x02
BIT
7
6
5
4
3
2
1
0
16
FIELD
DEV_ACTIVE
STDBY
DIAG_ACTIVE
FAULT
LOAD_SHORT
LOAD_OPEN
LOAD_SHORT_GND
LOAD_SHORT_VDD
TYPE
RO
RO
RO
RO
RO
RO
RO
RO
DEFAULT DESCRIPTION
0
0
0
0
0
0
0
0
Shows the device status (active or shutdown).
0
Device is shutdown.
1
Device is active.
Shows the device standby status.
0
Device is not on standby.
1
Device is on standby.
Shows the status of the diagnositcs engine.
0
Not performing load diagnostics.
1
Performing load diagnostics.
Shows if a fault has occured on the system. Either over-voltage, under-voltage, over-current,
over-temperature.
0
No fault has occured.
1
A fault has occured.
Shows whether the output is shorted.
0
OUT+ is not shorted to OUT-.
1
OUT+ is shorted to OUT-.
Shows whether the output has a proper load connected.
0
A proper load is connected between OUT+ and OUT-.
1
There is an open connection between OUT+ and OUT-.
Shows whether the output is shorted to GND.
0
Output is not shorted to GND.
1
Either OUT+ or OUT- is shorted to GND.
Shows whether the output is shorted to VDD.
0
Output is not shorted to VDD.
1
Either OUT+ or OUT- is shorted to VDD.
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7.6.4 Address: 0x03
Figure 16. 0x03
7
6
5
4
3
Reserved
GAIN[1:0]
R/W-0
R/W-0
2
1
0
FREQ_SEL[0]
R/W-0
Table 7. Address: 0x03
BIT
FIELD
7-6
GAIN[1:0]
5-1
0
TYPE
R/W
DEFAULT DESCRIPTION
0
Sets the gain of the driver.
0
20 dB.
1
26 dB.
2
32 dB.
3
36 dB.
Reserved
FREQ_SEL
R/W
0
Sets the output frequency.
0
400 kHz.
1
500 kHz.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The DRV2510-Q1 device is a high-efficiency driver for inductive loads, such as solenoids and voice-coils. The
typical use of the device is on haptic applications where short, strong waveforms are desired to create a haptic
event that will be coming from the application processor.
8.2 Typical Applications
8.2.1 Single-Ended Source
To use the DRV2510-Q1 with a single-ended source, apply either a voltage divider to bias INB to 3 V, tie to GND
or use a 0.1-μF cap from INB to GND to have the device self bias. Apply the single-ended signal to the INA pin.
VDD
BSTP
C2
C1
Optiona l
App lica tion
Pro cessor
L1
OUT+
R(PU) R(PU) R(PU)
EN
GPIO
C7
STDBY
GPIO
R1
INTZ
C4
GPIO
SDA
SDA
M
SCL
SCL
C5
IN+
PWM+
Sole noid/
Voice-Coil
LPF
R2
L2
INOUT±
C9
C8
REG
C6
GND
BSTN
C3
Optiona l
Figure 17. Typical Application Schematic
8.2.1.1 Design Requirements
For most applications the following component values found in Table 8 below can be used.
18
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Typical Applications (continued)
Table 8. Component Requirements Table
COMPONENT
DESCRIPTION
SPECIFICATION
TYPICAL VALUE
C1
Supply capacitor
Capacitance
22 µF, 10 µF, and 0.1 µF
C2/C3
Boost capacitor
Capacitance
0.22 µF
C4/C5
Output snubber capacitor
Capacitance
470 pF
C6
Regulator capacitor
Capacitance
1 µF
C9
Input decoupling capacitor
Capacitance
0.1 µF
R1/R2
Output snubber resistor
Resistance
3.3 Ω
R(PU)
Pull-up resistor
Resistance
100 kΩ
8.2.1.2 Detailed Design Procedure
8.2.1.2.1 Optional Components
Note that in the diagrams, there are a few optional external components. These optional external components
may be needed in the application to meet EMI/EMC standards and specifications by filters necessary frequency
spectrums.
8.2.1.2.2 Capacitor Selection
A bulk bypass capacitor should be mounted between VBAT and GND. The capacitance needs to be >22 uF with
a X5R or better rating on the power pins to GND. Also include two ceramic capacitors in the ranges of 220 pF to
1 uF and 100 nF to 1 uF. The bootstrap capacitors, BSTA and BSTB, should be 220-nF ceramic capacitors of
quality X5R or better rated for at least the maximum rating of the pin.
8.2.1.2.3 Solenoid Selection
The DRV2510-Q1 solenoid driver can accommodate a variety of solenoids. Solenoids should have an equivalent
resistance of 1.6 Ω or greater. Solenoids with lower resistances are prone to driving high currents. A maximum
peak current of 3-A should not be exceeded.
8.2.1.2.4 Output Filter Considerations
The output filter is optional and is mainly for limiting peak currents. A second-order Butterworth low-pass filter
with the cut-off frequency set to a few kilohertz should be sufficient. See Equation 2, Equation 3, and Equation 4
for example filter design.
1
H(s) = 2
s + 2s + 1
(1)
Lx =
2 ´ RL
2wo
(2)
2
RL
´ w0
2´
2
w0 = 2p ´ ƒ
2 ´ CF =
(3)
(4)
8.2.1.3 Application Curves
The follow curves were taken using the DRV-AAC16-EVM accelerometer with the following scales:
• Output Differential Voltage scale is shown on the plots at 5-V/div
• Acceleration scale is 5.85-G/div
• Current scale is 2-A/div
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Voltage (5V/div)
Acceleration
Current
[OUT+] − [OUT−]
Voltage (5V/div)
Acceleration
Input
[OUT+] − [OUT−]
0
2m
4m
6m
8m
10m 12m
Time (s)
14m
16m
18m
20m
0
Figure 18. Voltage and Acceleration vs Time (Input Square
Wave)
2m
4m
6m
8m
10m 12m
Time (s)
14m
16m
18m
20m
Figure 19. Voltage and Acceleration vs Time (Square
Wave)
Voltage (5V/div)
Acceleration
Current
[OUT+] − [OUT−]
Voltage (5V/div)
Acceleration
Current
[OUT+] − [OUT−]
0
2m
4m
6m
8m
10m 12m
Time (s)
14m
16m
18m
20m
Figure 20. Voltage and Acceleration vs Time (Ramp Wave)
0
2m
4m
6m
8m
10m 12m
Time (s)
14m
16m
18m
20m
Figure 21. Voltage and Acceleration vs Time (1/2 Sine
Wave)
8.2.1.4 Differential Input Diagram
To use the DRV2510-Q1 with a differential input source, apply both inputs differentially from a control source
(GPIO, DAC, etc...).
20
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VDD
BSTP
C2
C1
Optiona l
App lica tion
Pro cessor
L1
OUT+
R(PU) R(PU) R(PU)
EN
GPIO
C7
STDBY
GPIO
R1
INTZ
C4
GPIO
SDA
SDA
M
SCL
SCL
C5
IN+
PWM+
LPF
R2
L2
INPWM-
Sole noid/
Voice-Coil
LPF
OUT±
C8
REG
C6
GND
BSTN
C3
Optiona l
Figure 22. Typical Application Schematic
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9 Power Supply Recommendations
The DRV2510-Q1 device operates from 5 V - 18 V and this supply should be able to handle high surge currents
in order to meet the high currrent draws for haptics effects. Additionally the DRV2510-Q1 should have 22-µF, 10µF and 0.1-µF ceramic capacitors near the VDD pin for additional decoupling from trace routing.
10 Layout
10.1 Layout Guidelines
The EVM layout optimizes for thermal dissipation and EMC performance. The DRV2510-Q1 device has a
thermal pad down, and good thermal conduction and dissipation require adequate copper area. Layout also
affects EMC performance. It is best practice to use the same/similiar layout as shown below in the
DRV2510Q1EVM.
10.2 Layout Example
Figure 23. DRV2510-Q1 EVM
22
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
11.2 Trademarks
11.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
24
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PACKAGE OPTION ADDENDUM
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7-Jul-2016
PACKAGING INFORMATION
Orderable Device
Status
(1)
DRV2510QPWPRQ1
ACTIVE
Package Type Package Pins Package
Drawing
Qty
HTSSOP
PWP
16
2000
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
Op Temp (°C)
Device Marking
(4/5)
-40 to 125
DRV2510
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
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Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
25-Jun-2016
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
DRV2510QPWPRQ1
Package Package Pins
Type Drawing
SPQ
HTSSOP
2000
PWP
16
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
330.0
12.4
Pack Materials-Page 1
6.9
B0
(mm)
K0
(mm)
P1
(mm)
5.6
1.6
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
25-Jun-2016
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
DRV2510QPWPRQ1
HTSSOP
PWP
16
2000
367.0
367.0
35.0
Pack Materials-Page 2
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