DSS5160T 60V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • Case: SOT23 Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish — Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) C SOT23 C B B E Top View Device Symbol E Pin-Out Top Ordering Information (Note 3) Product DSS5160T-7 Notes: Marking ZP9 Reel size (inches) 7 Tape width (mm) 8mm Quantity per reel 3,000 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information ZP9 DSS5160T Document number: DS35532 Rev. 1 - 2 ZP9 = Product Type Marking Code 1 of 6 www.diodes.com January 2012 © Diodes Incorporated DSS5160T Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current Base Current (DC) Peak Base Current Symbol VCBO VCEO VEBO IC ICM IB IBM Value -80 -60 -5 -1 -2 -300 -1 Unit V V V A A mA A Value 725 172 79 -55 to +150 Unit mW °C/W °C/W °C Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient Air (Note 4) Operating and Storage Temperature Range Notes: Symbol PD RθJA RθJA TJ, TSTG 4. Operated under pulsed conditions: pulse width ≤100ms, duty cycle ≤ 0.25. 5. Device mounted on 15mm x 15mm x1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 0.8 Tamb=25°C VCE(sat) 10 Limit 15mm x 15mm 1oz FR4 1 100m DC 1s 10m 100ms 10ms 1m 100µ 0.1 1ms 100µs 1 10 100 -VCE Collector-Emitter Voltage (V) Max Power Dissipation (W) - IC Collector Current (A) Thermal Characteristics 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Safe Operating Area Derating Curve 160 T amb=25°C Maximum Power (W) Thermal Resistance (°C/W) 180 140 120 100 D=0.5 80 60 40 D=0.2 Single Pulse D=0.05 20 0 100µ D=0.1 1m 10m 100m 1 10 100 1k 10 1 100µ Pulse Width (s) Document number: DS35532 Rev. 1 - 2 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance DSS5160T Single Pulse T amb=25°C 100 Pulse Power Dissipation 2 of 6 www.diodes.com January 2012 © Diodes Incorporated DSS5160T Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) Emitter-Base Breakdown Voltage Symbol BVCBO BVCEO BVEBO Min -80 -60 -5 ⎯ ⎯ ⎯ 200 150 100 ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ -100 -50 -100 ⎯ ⎯ ⎯ -175 -180 ⎯ ⎯ -340 RCE(sat) VBE(sat) VBE(on) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 340 -1.1 -0.9 mΩ V V Transition Frequency fT 150 ⎯ ⎯ MHz Output Capacitance Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time Cob ton td tr toff ts tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 75 35 40 265 230 35 15 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF ns ns ns ns ns ns Collector-Base Cutoff Current ICBO Emitter-Base Cutoff Current IEBO DC Current Gain (Note 6) hFE Collector-Emitter Saturation Voltage (Note 6) Equivalent On-Resistance Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Notes: VCE(sat) Unit V V V nA μA nA ⎯ mV Test Conditions IC = -100μA IC = -10mA IE = -100μA VCB = -20V, IE = 0 VCB = -20V, IE = 0, TA = 150°C VEB = -5V, IC = 0 VCE = -5V, IC = -1mA VCE = -5V, IC = -500mA VCE = -5V, IC = -1A IC = -100mA, IB = -1mA IC = -500mA, IB = -50mA IC = -1A, IB = -100mA IE = -1A, IB = -100mA IC = -1A, IB = -50mA VCE = -5V, IC = -1A VCE = -10V, IC = -50mA, f = 100MHz VCB = -10V, f = 1MHz VCC = -10V, IC = -0.5A, IB1 = IB2 = -25mA 6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. DSS5160T Document number: DS35532 Rev. 1 - 2 3 of 6 www.diodes.com January 2012 © Diodes Incorporated DSS5160T 1 800 IC/IB = 10 VCE = -5V -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 700 600 TA = 150°C 500 TA = 85°C 400 T A = 25°C 300 200 TA = -55°C 0.1 TA = 150°C TA = 85°C TA = 25°C T A = -55°C 0.01 100 0 0.001 0.1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current 1.2 VCE = -5V 1.0 0.8 T A = -55°C 0.6 T A = 25°C 0.4 T A = 85°C 0.2 TA = 150°C 0 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 1.2 1.0 IC/IB = 10 0.8 TA = -55°C 0.6 T A = 25°C 0.4 T A = 85°C 0.2 0 0.1 T A = 150°C 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Saturation Voltage vs. Collector Current 180 f = 1MHz CAPACITANCE (pF) 150 120 90 Cibo 60 30 Cobo 0 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 9 Typical Capacitance Characteristics DSS5160T Document number: DS35532 Rev. 1 - 2 4 of 6 www.diodes.com January 2012 © Diodes Incorporated DSS5160T Package Outline Dimensions A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm B C H K M K1 D J F L G Suggested Pad Layout Y Z C X DSS5160T Document number: DS35532 Rev. 1 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com January 2012 © Diodes Incorporated DSS5160T IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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