bq4845/bq4845Y Parallel RTC With CPU Supervisor General Description Features ➤ Real-Time Clock counts seconds through years in BCD format ➤ On-chip battery-backup switchover circuit with nonvolatile control for external SRAM ➤ Less than 500nA of clock operation current in backup mode ➤ Microprocessor reset valid to VCC = VSS ➤ Independent watchdog timer with a programmable time-out period ➤ Power-fail interrupt warning ➤ Programmable clock alarm interrupt active in battery-backup mode ➤ Programmable periodic interrupt 28 27 26 25 24 23 22 21 20 19 18 17 16 15 The bq4845 also has a built-in watchdog timer to monitor processor operation. If the microprocessor does not toggle the watchdog input (WDI) within the programmed time-out period, the bq4845 asserts WDO and RST. WDI unconnected disables the watchdog timer. The bq4845 can generate other interrupts based on a clock alarm condition or a periodic setting. The alarm interrupt can be set to occur from once per second to once per month. The alarm can be made active in the battery-backup mode to serve as a system wake-up call. For interrupts at a rate beyond once per second, the periodic interrupt can be programmed with periods of 30.5µs to 500ms. Pin Names Pin Connections 1 2 3 4 5 6 7 8 9 10 11 12 13 14 The bq4845 provides direct connections for a 32.768KHz quartz crystal and a 3V backup battery. Through the use of the conditional chip enable output (CE OUT ) and battery voltage output (V OUT ) pins, the bq4845 can write-protect and make nonvolatile external SRAMs. The backup cell powers the real-time clock and maintains SRAM information in the absence of system voltage. The bq4845 contains a temperaturecompensated reference and comparator circuit that monitors the status of its voltage supply. When the bq4845 de- ➤ Battery-low warning VOUT X1 X2 WDO INT RST A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS The bq4845 Real-Time Clock is a low-power microprocessor peripheral that integrates a time-of-day clock, a 100-year calendar, and a CPU supervisor in a 28-pin SOIC or DIP. The bq4845 is ideal for fax machines, copiers, industrial control systems, point-of-sale terminals, data loggers, and computers. tects an out-of-tolerance condition, it generates an interrupt warning and subsequently a microprocessor reset. The reset stays active for 200ms after VCC rises within tolerance, to allow for power supply and processor stabilization. VCC WE CEIN CEOUT BC WDI OE CS VSS DQ7 DQ8 DQ5 DQ4 DQ3 A0–A3 Clock/control address inputs BC Backup battery input DQ0–DQ7 Data inputs/outputs VOUT Back-up battery output WE Write enable INT Interrupt output OE Output enable RST Microprocessor reset CS Chip select input WDI Watchdog input CEIN External RAM chip enable WDO Watchdog output CEOUT Conditional RAM chip enable VCC +5V supply VSS Ground 28-DIP or SOIC PN484501.eps X1–X2 Crystal inputs Aug. 1995 1 bq4845/bq4845Y power-on reset timing, watchdog timer activation, and interrupt generation. Functional Description Figure 1 is a block diagram of the bq4845. The following sections describe the bq4845 functional operation including clock interface, data-retention modes, Figure 1. Block Diagram Truth Table VCC CS OE WE CEOUT VOUT Mode DQ Power < VCC (max.) VIH X X CEIN VOUT1 Deselect High Z Standby VIL X VIL CEIN VOUT1 Write DIN Active > VCC (min.) VIL VIL VIH CEIN VOUT1 Read DOUT Active VIL VIH VIH CEIN VOUT1 Read High Z Active < VPFD (min.) > VSO X X X VOH VOUT1 Deselect High Z CMOS standby ≤ VSO X X X VOHB VOUT2 Deselect High Z Battery-backup mode Aug. 1995 2 bq4845/bq4845Y DQ0–DQ7 Data input and output Pin Descriptions X1–X2 X1–X2 are a direct connection 32.768kHZ, 6pF crystal. RST DQ0–DQ7 provide x8 data for real-time clock information. These pins connect to the memory data bus. Crystal inputs for a Reset output RST goes low whenever VCC falls below the power fail threshold. RST will remain low for 200ms typical after VCC crosses the threshold on power-up. RST also goes low whenever a watchdog timeout occurs. RST is an opendrain output. INT VSS Ground CS Chip select OE Output enable OE provides the read control for the RTC memory locations. CEOUT Interrupt output CEOUT goes low only when CEIN is low and VCC is above the power fail threshold. If CEIN is low, and power fail occurs, CEOUT stays low for 100µs or until CEIN goes high, whichever occurs first. INT goes low when a power fail, periodic, or alarm condition occurs. INT is an open-drain output. WDI Watchdog input CEIN WDI is a three-level input. If WDI remains either high or low for longer than the watchdog time-out period (1.5 seconds default), WDO goes low. WDO remains low until the next transition at WDI. Leaving WDI unconnected disables the watchdog function. WDI connects to an internal voltage divider between VOUT and VSS, which sets it to mid-supply when left unconnected. WDO Chip enable input CEIN is the input to the chip-enable gating circuit. BC Backup battery input BC should be connected to a 3V backup cell. A voltage within the VBC range on the BC pin should be present upon power up to provide proper oscillator start-up. VOUT Watchdog output Output supply voltage VOUT provides the higher of VCC or VBC, switched internally, to supply external RAM. WDO goes low if WDI remains either high or low longer than the watchdog time-out period. WDO returns high on the next transition at WDI. WDO remains high if WDI is unconnected. A0–A3 Chip enable output WE Write enable WE provides the write control for the RTC memory locations. Clock address inputs VCC A0–A3 allow access to the 16 bytes of realtime clock and control registers. Input supply voltage +5V input Aug. 1995 3 bq4845/bq4845Y Address Map Read Mode The bq4845 provides 16 bytes of clock and control status registers. Table 1 is a map of the bq4845 registers, and Table 2 describes the register bits. The bq4845 is in read mode whenever OE (Output enable) is low and CS (chip select) is low. The unique address, specified by the 4 address inputs, defines which one of the 16 clock/calendar bytes is to be accessed. The bq4845 makes valid data available at the data I/O pins within tAA (address access time). This occurs after the last address input signal is stable, and providing the CS and OE (output enable) access times are met. If the CS and OE access times are not met, valid data is available after the latter of chip select access time (tACS) or output enable access time (tOE). Clock Memory Interface The bq4845 has the same interface for clock/calendar and control information as standard SRAM. To read and write to these locations, the user must put the bq4845 in the proper mode and meet the timing requirements. CS and OE control the state of the eight three-state data I/O signals. If the outputs are activated before tAA, Table 1. bq4845 Clock and Control Register Map Address (h) 0 D7 0 1 ALM1 2 0 3 ALM1 4 PM/AM ALM1 PM/AM 0 ALM1 0 0 5 6 7 8 9 A B * C * D E F * * * Notes: D6 D5 D4 10-second digit ALM0 10-second digit 10-minute digit ALM0 10-minute digit 0 10-hour digit ALM0 D3 10-hour digit 0 ALM0 10-day digit 10-day digit 0 0 0 10 mo. 10-year digit WD2 * WD1 WD0 0 12-Hour Range (h) 00–59 Register Seconds 1-second digit 00–59 Seconds alarm 1-minute digit 00–59 Minutes 1-minute digit 00–59 Minutes alarm D2 D1 1-second digit D0 1-hour digit 01–12 AM/ 81– 92 PM Hours 1-hour digit 01–12 AM/ 81–92 PM Hours alarm 1-day digit 1-day digit Day-of-week digit 1-month digit 1-year digit RS3 RS2 * AIE PIE PWRIE ABE * * * AF UTI * PF STOP * PWRF BVF 24/12 DSE * * * RS1 RS0 01–31 01–31 01–07 01–12 00–99 Day Day alarm Day-of-week Month Year Programmable rates Interrupt enables Flags Control Unused * = Unused bits; unwritable and read as 0. 0 = should be set to 0 for valid time/calendar range. Clock calendar data in BCD. Automatic leap year adjustment. PM/AM = 1 for PM; PM/AM = 0 for AM. DSE = 1 enables daylight savings adjustment. 24/12 = 1 enables 24-hour data representation; 24/12 = 0 enables 12-hour data representation. Day-of-Week coded as Sunday = 1 through Saturday = 7. BVF = 1 for valid battery. STOP = 1 turns the RTC on; STOP = 0 stops the RTC in back-up mode. Aug. 1995 4 bq4845/bq4845Y Reading the Clock Table 2. Clock and Control Register Bits ABE Alarm interrupt enable in battery-backup mode AF Alarm interrupt flag AIE Alarm interrupt enable ALM0–ALM1 Alarm mask bits BVF Battery-valid flag DSE Daylight savings time enable PF Periodic interrupt flag PIE Periodic interrupt enable Once every second, the user-accessible clock/calendar locations are updated simultaneously from the internal real time counters. To prevent reading data in transition, updates to the bq4845 clock registers should be halted. Updating is halted by setting the update transfer inhibit (UTI) bit D3 of the control register E. As long as the UTI bit is 1, updates to user-accessible clock locations are inhibited. Once the frozen clock information is retrieved by reading the appropriate clock memory locations, the UTI bit should be reset to 0 in order to allow updates to occur from the internal counters. Because the internal counters are not halted by setting the UTI bit, reading the clock locations has no effect on clock accuracy. Once the UTI bit is reset to 0, the internal registers update within one second the user-accessible registers with the correct time. A halt command issued during a clock update allows the update to occur before freezing the data. PM/AM PM or AM indication Setting the Clock PWRF Power-fail interrupt flag PWRIE Power-fail interrupt enable RS0–RS3 Periodic interrupt rate STOP Oscillator stop and start The UTI bit must also be used to set the bq4845 clock. Once set, the locations can be written with the desired information in BCD format. Resetting the UTI bit to 0 causes the written values to be transferred to the internal clock counters and allows updates to the useraccessible registers to resume within one second. UTI Update transfer inhibit WD0 - WD2 Watchdog time-out rate Bits 24/12 Description 24- or 12-hour representation Stopping and Starting the Clock Oscillator The bq4845 clock can be programmed to turn off when the part goes into battery back-up mode by setting STOP to 0 prior to power down. If the board using the bq4845 is to spend a significant period of time in storage, the STOP bit can be used to preserve some battery capacity. STOP set to 1 keeps the clock running when VCC drops below VSO. With VCC greater than VSO, the bq4845 clock runs regardless of the state of STOP. the data lines are driven to an indeterminate state until tAA. If the address inputs are changed while CS and OE remain low, output data remains valid for tOH (output data hold time), but goes indeterminate until the next address access. Write Mode Power-Down/Power-Up Cycle The bq4845 is in write mode whenever WE and CS are active. The start of a write is referenced from the latter-occurring falling edge of WE or CS. A write is terminated by the earlier rising edge of WE or CS. The addresses must be held valid throughout the cycle. CS or WE must return high for a minimum of tWR2 from CS or tWR1 from WE prior to the initiation of another read or write cycle. The bq4845 continuously monitors V CC for out-oftolerance. During a power failure, when VCC falls below VPFD, the bq4845 write-protects the clock and storage registers. When VCC is below VBC (3V typical), the power source is switched to BC. RTC operation and storage data are sustained by a valid backup energy source. When VCC is above VBC, the power source is VCC. Write-protection continues for tCSR time after VCC rises above VPFD. Data-in must be valid tDW prior to the end of write and remain valid for tDH1 or tDH2 afterward. OE should be kept high during write cycles to avoid bus contention; although, if the output bus has been activated by a low on CS and OE, a low on WE disables the outputs tWZ after WE falls. An external CMOS static RAM is battery-backed using the VOUT and chip enable output pins from the bq4845. As the voltage input VCC slews down during a power failure, the chip enable output, CEOUT, is forced inactive independent of the chip enable input CEIN. Aug. 1995 5 bq4845/bq4845Y This activity unconditionally write-protects the external SRAM as VCC falls below VPFD. If a memory access is in progress to the external SRAM during power-fail detection, that memory cycle continues to completion before the memory is write-protected. If the memory cycle is not terminated within time tWPT, the chip enable output is unconditionally driven high, write-protecting the controlled SRAM. A primary backup energy source input is provided on the bq4845. The BC input accepts a 3V primary battery, typically some type of lithium chemistry. Since the bq4845 provides for reverse battery charging protection, no diode or current limiting resistor is needed in series with the cell. To prevent battery drain when there is no valid data to retain, VOUT and CEOUT are internally isolated from BC by the initial connection of a battery. Following the first application of VCC above VPFD, this isolation is broken, and the backup cell provides power to VOUT and CEOUT for the external SRAM. As the supply continues to fall past VPFD, an internal switching device forces VOUT to the external backup energy source. CEOUT is held high by the VOUT energy source. The crystal should be located as close to X1 and X2 as possible and meet the specifications in the Crystal Specification Table. With the specified crystal, the bq4845 RTC will be accurate to within one minute per month at room temperature. In the absence of a crystal, a 32.768 kHz waveform can be fed into X1 with X2 grounded. During power-up, VOUT is switched back to the 5V supply as VCC rises above the backup cell input voltage sourcing VOUT. CEOUT is held inactive for time tCER after the power supply has reached VPFD, independent of the CEIN input, to allow for processor stabilization. During power-valid operation, the CEIN input is passed through to the CEOUT output with a propagation delay of less than 12ns. Power-On Reset The bq4845 provides a power-on reset, which pulls the RST pin low on power-down and remains low on powerup for tRST after VCC passes VPFD. With valid battery voltage on BC, RST remains valid for VCC= VSS. Figure 2 shows the hardware hookup for the external RAM, battery, and crystal. Figure 2. bq4845 Application Circuit Aug. 1995 6 bq4845/bq4845Y at WDI) biases WDI to approximately 1.6V. Internal comparators detect this level and disable the watchdog timer. When VCC is below the power-fail threshold, the bq4845 disables the watchdog function and disconnects WDI from its internal resistor network, thus making it high impedance. Watchdog Timer The watchdog monitors microprocessor activity through the Watchdog input (WDI). To use the watchdog function, connect WDI to a bus line or a microprocessor I/O line. If WDI remains high or low for longer than the watchdog time-out period (1.5 seconds default), the bq4845 asserts WDO and RST. Watchdog Output The Watchdog output (WDO) remains high if there is a transition or pulse at WDI during the watchdog timeout period. The bq4845 disables the watchdog function and WDO is a logic high when VCC is below the power fail threshold, battery-backup mode is enabled, or WDI is an open circuit. In watchdog mode, if no transition occurs at WDI during the watchdog time-out period, the bq4845 asserts RST for the reset time-out period t1. WDO goes low and remains low until the next transition at WDI. If WDI is held high or low indefinitely, RST will generate pulses (t1 seconds wide) every t3 seconds. Figure 3 shows the watchdog timing. Watchdog Input The bq4845 resets the watchdog timer if a change of state (high to low, low to high, or a minimum 100ns pulse) occurs at the Watchdog input (WDI) during the watchdog period. The watchdog time-out is set by WD0WD2 in register B. The bq4845 maintains the watchdog time-out programming through power cycles. The default state (no valid battery power) of WD0-WD2 is 000 or 1.5s on power-up. Table 3 shows the programmable watchdog time-out rates. The watchdog time-out period immediately after a reset is equal to the programmed watchdog time-out. To disable the watchdog function, leave WDI floating. An internal resistor network (100kΩ equivalent impedance Figure 3. Watchdog Time-out Period and Reset Active Time Aug. 1995 7 bq4845/bq4845Y ters with the corresponding alarm registers. If a match between all the corresponding bytes is found, the alarm flag AF in the flags register is set. If the alarm interrupt is enabled with AIE, an interrupt request is generated on INT. The alarm condition is cleared by a read to the flags register. ALM1 – ALM0 in the alarm registers, mask each alarm compare byte. An alarm byte is masked by setting ALM1 (D7) and ALM0 (D6) to 1. Alarm byte masking can be used to select the frequency of the alarm interrupt, according to Table 5. Interrupts The bq4845 allows three individually selected interrupt events to generate an interrupt request on the INT pin. These three interrupt events are: ■ The periodic interrupt, programmable to occur once every 30.5µs to 500ms ■ The alarm interrupt, programmable to occur once per second to once per month ■ The power-fail interrupt, which can be enabled to be asserted when the bq4845 detects a power failure The alarm interrupt can be made active while the bq4845 is in the battery-backup mode by setting ABE in the interrupts register. Normally, the INT pin goes high-impedance during battery backup. With ABE set, however, INT is driven low if an alarm condition occurs and the AIE bit is set. Because the AIE bit is reset during power-on reset, an alarm generated during power-on reset updates only the flags register. The user can read the flags register during boot-up to determine if an alarm was generated during power-on reset. The periodic, alarm, and power-fail interrupts are enabled by an individual interrupt-enable bit in register C, the interrupts register. When an event occurs, its event flag bit in the flags register, register D, is set. If the corresponding event enable bit is also set, then an interrupt request is generated. Reading the flags register clears all flag bits and makes INT high impedance. To reset the flag register, the bq4845 addresses must be held stable at register D for at least 50ns to avoid inadvertent resets. Power-Fail Interrupt When V CC falls to the power-fail-detect point, the power-fail flag PWRF is set. If the power-fail interrupt enable bit (PWRIE) is also set, then INT is asserted low. The power-fail interrupt occurs tWPT before the bq4845 generates a reset and deselects. The PWRIE bit is cleared on power-up. Periodic Interrupt Bits RS3–RS0 in the interrupts register program the rate for the periodic interrupt. The user can interpret the interrupt in two ways: either by polling the flags register for PF assertion or by setting PIE so that INT goes active when the bq4845 sets the periodic flag. Reading the flags register resets the PF bit and returns INT to the high-impedance state. Table 4 shows the periodic rates. Battery-Low Warning The bq4845 checks the battery on power-up. When the battery voltage is approximately 2.1V, the battery-valid flag BVF in the flags register is set to a 0 indicating that clock and RAM data may be invalid. Alarm Interrupt Registers 1, 3, 5, and 7 program the real-time clock alarm. During each update cycle, the bq4845 compares the date, hours, minutes, and seconds in the clock regis- Table 3. Watchdog Time-out Rates WD2 WD1 WD0 Normal Watchdog Time-out Period (t2, t3) Reset Time-out Period (t1) 0 0 0 1.5s 0.25s 0 0 1 23.4375ms 3.9063ms 0 1 0 46.875ms 7.8125ms 0 1 1 93.75ms 15.625ms 1 0 0 187.5ms 31.25ms 1 0 1 375ms 62.5ms 1 1 0 750ms 125ms 1 1 1 3s 0.5s Aug. 1995 8 bq4845/bq4845Y Table 4. Periodic Interrupt Rates Register B Bits Periodic Interrupt RS3 RS2 RS1 RS0 Period Units 0 0 0 0 None 0 0 0 1 30.5175 µs 0 0 1 0 61.035 µs 0 0 1 1 122.070 µs 0 1 0 0 244.141 µs 0 1 0 1 488.281 µs 0 1 1 0 976.5625 µs 0 1 1 1 1.95315 ms 1 0 0 0 3.90625 ms 1 0 0 1 7.8125 ms 1 0 1 0 15.625 ms 1 0 1 1 31.25 ms 1 1 0 0 62.5 ms 1 1 0 1 125 ms 1 1 1 0 250 ms 1 1 1 1 500 ms Table 5. Alarm Frequency (Alarm Bits D6 and D7 of Alarm Registers) 1h 3h 5h 7h ALM1•ALM0 ALM1•ALM0 ALM1•ALM0 ALM1•ALM0 1 1 1 1 Once per second 0 1 1 1 Once per minute when seconds match 0 0 1 1 Once per hour when minutes, and seconds match 0 0 0 1 Once per day when hours, minutes, and seconds match 0 0 0 0 When date, hours, minutes, and seconds match Aug. 1995 9 Alarm Frequency bq4845/bq4845Y Absolute Maximum Ratings Symbol Parameter Value Unit Conditions VCC DC voltage applied on VCC relative to VSS -0.3 to 7.0 V VT DC voltage applied on any pin excluding VCC relative to VSS -0.3 to 7.0 V VT ≤ VCC + 0.3 TOPR Operating temperature 0 to +70 °C Commercial -40 to +85 °C Industrial TSTG Storage temperature -55 to +125 °C TBIAS Temperature under bias -40 to +85 °C TSOLDER Soldering temperature +260 °C Note: For 10 seconds Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Exposure to conditions beyond the operational limits for extended periods of time may affect device reliability. Recommended DC Operating Conditions (TA = TOPR) Symbol VCC Note: Parameter Supply voltage Minimum Typical Maximum Unit 4.5 5.0 5.5 V bq4845Y 4.75 5.0 5.5 V bq4845 0 0 0 V VSS Supply voltage VIL Input low voltage -0.3 - 0.8 V VIH Input high voltage 2.2 - VCC + 0.3 V VBC Backup cell voltage 2.3 - 4.0 V Notes Typical values indicate operation at TA = 25°C. Aug. 1995 10 bq4845/bq4845Y DC Electrical Characteristics (TA = TOPR, VCCmin Symbol ILI Parameter Input leakage current ILO Output leakage current VOH VOHB VOL Output high voltage VOH, BC Supply Output low voltage ICC ISB1 ≤ VCC ≤ VCCmax) Minimum - Typical - Maximum ±1 Unit µA - - ±1 µA 2.4 VBC- 0.3 - - 0.4 V V V Operating supply current - 12 25 mA Standby supply current - 3 - mA ISB2 Standby supply current - 1.5 - mA VSO Supply switch-over voltage - VBC - V ICCB Battery operation current - 0.3 0.5 µA 4.62 4.37 -10 20 4.75 4.5 0.4V 0.4V 0.4V 50 V V V V µA µA VPFD VOUT1 VOUT2 VRST VINT VWDO IWDIL IWDIH Notes: Power-fail-detect voltage Power-fail-detect voltage VOUT voltage VOUT voltage RST output voltage INT output voltage 4.55 4.30 VCC - 0.3V VBC - 0.3V WDO output voltage 2.4 Watchdog input low current -50 Watchdog input high current - Conditions/Notes VIN = VSS to VCC CS = VIH or OE = VIH or WE = VIL IOH = -2.0 mA VBC > VCC, IOH = -10µA IOL = 4.0 mA Min. cycle, duty = 100%, CS = VIL, II/O = 0mA CS = VIH CS ≥ VCC - 0.2V, 0V ≤ VIN ≤ 0.2V, or VIN ≥ VCC - 0.2V VBC = 3V, TA = 25°C, no load on VOUT or CEOUT bq4845 bq4845Y IOUT = 100mA, VCC > VBC IOUT = 100µA, VCC < VBC IRST = 4mA IINT = 4mA ISINK = 4mA ISOURCE = 2mA 0 < VWDI < 0.8V 2.2 < VWDI < VCC Typical values indicate operation at TA = 25°C, VCC = 5V. RST and INT are open-drain outputs. Crystal Specifications (DT-26 or Equivalent) Minimum Typical Maximum Unit fO Symbol Oscillation frequency Parameter - 32.768 - kHz CL Load capacitance - 6 - pF TP Temperature turnover point 20 25 30 °C k Parabolic curvature constant - - -0.042 ppm/°C Q Quality factor 40,000 70,000 - R1 Series resistance - - 45 KΩ C0 Shunt capacitance - 1.1 1.8 pF C0/C1 Capacitance ratio - 430 600 DL Drive level - - 1 µW ∆f/fO Aging (first year at 25°C) - 1 - ppm Aug. 1995 11 bq4845/bq4845Y Capacitance (TA = 25°C, F = 1MHz, VCC = 5.0V) Symbol Parameter Minimum Typical Maximum Unit CI/O Input/output capacitance - - 7 pF Output voltage = 0V CIN Input capacitance - - 5 pF Input voltage = 0V Note: Conditions These parameters are sampled and not 100% tested. AC Test Conditions Parameter Test Conditions Input pulse levels 0V to 3.0V Input rise and fall times 5 ns Input and output timing reference levels 1.5 V (unless otherwise specified) Output load (including scope and jig) See Figures 4 and 5 Figure 4. Output Load A Figure 5. Output Load B Aug. 1995 12 bq4845/bq4845Y Read Cycle (TA = TOPR, VCCmin ≤ VCC ≤ VCCmax) Symbol Parameter Min. Max. Unit 70 - ns Conditions - 70 ns Output load A - 70 ns Output load A tRC Read cycle time tAA Address access time tACS Chip select access time tOE Output enable to output valid - 35 ns Output load A tCLZ Chip select to output in low Z 5 - ns Output load B tOLZ Output enable to output in low Z 0 - ns Output load B tCHZ Chip deselect to output in high Z 0 25 ns Output load B tOHZ Output disable to output in high Z 0 25 ns Output load B tOH Output hold from address change 10 - ns Output load A Write Cycle Symbol (TA =TOPR , VCCmin ≤ VCC ≤ VCCmax) Parameter Min. Max. Unit tWC Write cycle time 70 - ns tCW Chip select to end of write 65 - ns tAW Address valid to end of write 65 - ns Conditions (1) (1) tAS Address setup time 0 - ns Measured from address valid to beginning of write. (2) tWP Write pulse width 55 - ns Measured from beginning of write to end of write. (1) tWR1 Write recovery time (write cycle 1) 5 - ns Measured from WE going high to end of write cycle. (3) tWR2 Write recovery time (write cycle 2) 15 - ns Measured from CS going high to end of write cycle. (3) tDW Data valid to end of write 30 - ns Measured to first low-to-high transition of either CS or WE. tDH1 Data hold time (write cycle 1) 0 - ns Measured from WE going high to end of write cycle. (4) tDH2 Data hold time (write cycle 2) 10 - ns Measured from CS going high to end of write cycle. (4) tWZ Write enabled to output in high Z 0 25 ns I/O pins are in output state. (5) tOW Output active from end of write 0 - ns I/O pins are in output state. (5) Notes: 1. A write ends at the earlier transition of CS going high and WE going high. 2. A write occurs during the overlap of a low CS and a low WE. A write begins at the later transition of CS going low and WE going low. 3. Either tWR1 or tWR2 must be met. 4. Either tDH1 or tDH2 must be met. 5. If CS goes low simultaneously with WE going low or after WE going low, the outputs remain in high-impedance state. Aug. 1995 13 bq4845/bq4845Y Read Cycle No. 1 (Address Access) 1,2 Read Cycle No. 2 (CS Access) 1,3,4 Read Cycle No. 3 (OE Access) 1,5 Notes: 1. WE is held high for a read cycle. 2. Device is continuously selected: CS = OE = VIL. 3. Address is valid prior to or coincident with CS transition low. 4. OE = VIL. 5. Device is continuously selected: CS = VIL. Aug. 1995 14 bq4845/bq4845Y Write Cycle No. 1 (WE-Controlled) 1,2,3 Write Cycle No. 2 (CS-Controlled) 1,2,3,4,5 Notes: 1. CS or WE must be high during address transition. 2. Because I/O may be active (OE low) during this period, data input signals of opposite polarity to the outputs must not be applied. 3. If OE is high, the I/O pins remain in a state of high impedance. 4. Either tWR1 or tWR2 must be met. 5. Either tDH1 or tDH2 must be met. Aug. 1995 15 bq4845/bq4845Y Power-Down/Power-Up Timing (TA = TOPR) Minimum Typical Maximum Unit tF Symbol VCC slew from 4.75 to 4.25V Parameter 300 - - µs tFS VCC slew from 4.25 to VSO 10 - - µs tR VCC slew from VSO to VPFD(MAX) 100 - - µs Conditions tPF Interrupt delay from VPFD 6 - 24 µs tWPT Write-protect time for external RAM 90 100 125 µs Delay after VCC slews down past VPFD before SRAM is write-protected and RST activated. tCSR CS at VIH after power-up 100 200 300 ms Internal write-protection period after VCC passes VPFD on power-up. tRST VPFD to RST inactive tCSR - tCSR ms Reset active time-out period tCER tCED Chip enable recovery time Chip enable propagation delay to external SRAM tCSR - tCSR ms Time during which external SRAM is write-protected after VCC passes VPFD on power-up. - 9 12 ns Output load A Caution: Negative undershoots below the absolute maximum rating of -0.3V in battery-backup mode may affect data integrity. Power-Down/Power-Up Timing Notes: PWRIE set to “1” to enable power fail interrupt. RST and INT are open drain and require an external pull-up resistor. Aug. 1995 16 bq4845/bq4845Y 28-Pin DIP (P) 28-Pin DIP (P) Dimension A A1 B B1 C D E E1 e G L S Minimum 0.160 0.015 0.015 0.045 0.008 1.440 0.600 0.530 0.600 0.090 0.115 0.070 All dimensions are in inches. Aug. 1995 17 Maximum 0.190 0.040 0.022 0.065 0.013 1.480 0.625 0.570 0.670 0.110 0.150 0.090 bq4845/bq4845Y 28-Pin SOIC (S) 28-Pin SOIC (S) Dimension A A1 B C D E e H L Minimum 0.095 0.004 0.013 0.008 0.700 0.290 0.045 0.395 0.020 Maximum 0.105 0.012 0.020 0.013 0.715 0.305 0.055 0.415 0.040 All dimensions are in inches. Aug. 1995 18 bq4845/bq4845Y Ordering Information bq4845 Temperature Range: Blank = Commercial N = Industrial Package Option: P = 28-pin plastic DIP (0.600) S = 28-pin SOIC (0.300) Voltage Tolerance: Blank = 5% Y = 10% Device: bq4845 Real-Time Clock With CPU Supervisor Aug. 1995 19 PACKAGE OPTION ADDENDUM www.ti.com 17-Nov-2005 PACKAGING INFORMATION Orderable Device Status (1) BQ4845P-A4 ACTIVE PDIP N 28 13 TBD Call TI BQ4845S-A4 ACTIVE SOIC DW 28 20 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ4845S-A4N ACTIVE SOIC DW 28 20 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ4845S-A4NTR ACTIVE SOIC DW 28 1000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ4845S-A4TR ACTIVE SOIC DW 28 1000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ4845S-A4TRG4 ACTIVE SOIC DW 28 1000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ4845YP-A4 ACTIVE PDIP N 28 13 TBD Call TI BQ4845YS-A4 ACTIVE SOIC DW 28 20 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ4845YS-A4N ACTIVE SOIC DW 28 20 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ4845YS-A4NG4 ACTIVE SOIC DW 28 20 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ4845YS-A4NTR ACTIVE SOIC DW 28 1000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ4845YS-A4TR ACTIVE SOIC DW 28 1000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ4845YS-A4TRG4 ACTIVE SOIC DW 28 1000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR Package Type Package Drawing Pins Package Eco Plan (2) Qty Lead/Ball Finish MSL Peak Temp (3) Level-NA-NA-NA Level-NA-NA-NA (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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