IN74LV02 QUAD 2-INPUT NOR GATE The IN74LV02 is a low-voltage Si-gate CMOS device that is pin and function compatible with 74HC/HCT02A, 74ALS02 Features: • Wide Operating Voltage: 1.0÷5.5 V • Input voltage levels are compatible with standard C-MOS levels • Accepts TTL input levels between VCC =2.7 V and VCC =3.6 V • Output voltage levels are compatible with input levels C-MOS, N-MOS and TTL microcircuits. • Maximum input current: 1.0 mkA; 0.1 mkA at Т = 25 °С. • Consumption current 8 mA. ORDERING INFORMATION IN74LV02N Plastic IN74LV02D SOIC IZ74LV02 Chip TA = -40° ÷ 125° C for all packages IN74LV02 truth table Input A L L H H Output Y= A + B H L L L B L H L H Note – H - high voltage level; L - low voltage level; Pins description in IN74LV02D Pinout Y1 01 14 Vcc A1 02 13 Y4 B1 03 12 B4 Y2 04 11 A4 A2 05 10 Y3 B2 06 09 B3 GND 07 08 A3 Pin No. 01 Symbol Y1 Output 02 03 04 А1 В1 Input Input Output Y2 05 06 07 08 09 10 А2 В2 GND А3 В3 11 12 13 А4 В4 Y4 14 VCC Y3 1 Pin description Input Input Common output Input Input Output Input Input Output Supply output from voltage source IN74LV02 Absolute maximum ratings* Symbol Parameter VCC Supply voltage IIK *1 IOK *2 Value Unit from -0.5 to +5.0 V Input diode current ±20 mA Output diode current ±50 mA Output current source-drain ±25 mA ICC Supply output current ±50 mA IGND Common output current ±50 mA PD Dissipation power at free air change, Plastic DIP *4 4 SOIC * 750 500 3 IO * Tstg Storage temperature mW °C from -65 to +150 TL °C 260 * Under absolute maximum conditions operation of microcircuits is not guaranteed. Operation under maximum conditions is guaranteed. *1 If VI < -0.5V or VI > VCC + 0.5 V. *2 If VO < -0.5V or VO > VCC + 0.5 V. *3 If -0.5V < VO < VCC + 0.5 V. *4 Under operation in the temperature range from 65°С to 125°C value of dissipation power drops down - to 12 mW/°C for Plastic DIP - to 8 mW/°C for SOIC Maximum conditions Symbol VCC VIN VOUT TA tLH, tHL Parameter Supply voltage Input voltage Output voltage Operation temperature. For all packages Period of signal rise and 1.0 ≤ VCC < 1.2 В fall edges (Figure 1) 2.0 ≤ VCC < 2.7 В 2.7 ≤ VCC < 3.6 В 3.6 ≤ VCC ≤ 5.5 В 2 Min Max Unit 1.2 0 0 -40 0 5.5 VCC VCC 125 500 200 100 50 V V V °C ns IN74LV02 DC electrical characteristics Sym bol Parameter V , Test conditions CC V VIH High level voltage input VO = VCC-0.1 V VIL Low level voltage input VO =0.1 B VOH High level voltage VOL II ICC ICC1 output VI = VIH or VIL IO = -100 uA 1.2 2.0 2.7 3.0 3.6 4.5 5.5 1.2 2.0 2.7 3.0 3.6 4.5 5.5 1.2 2.0 2.7 3.0 3.6 4.5 5.5 3.0 25°C min 0.9 1.4 2.0 2.0 2.0 3.15 3.85 1.05 1.85 2.55 2.85 3.45 4.35 5.35 2.48 max 0.3 0.6 0.8 0.8 0.8 4.35 5.35 - Value -40oC to 85 oC min max 0.9 1.4 2.0 2.0 2.0 3.15 3.85 0.3 0.6 0.8 0.8 0.8 - 4.35 - 5.35 1.0 1.8 2.5 2.8 3.4 4.3 5.3 2.40 - -40 oC to Unit 125 oC min max V 0.9 1.4 2.0 2.0 2.0 3.15 3.85 V 0.3 0.6 0.8 0.8 0.8 - 4.35 - 5.35 V 1.0 1.8 2.5 2.8 3.4 4.3 5.3 2.20 V VI = VIH or VIL; IO = -6 mA VI = VIH or VIL; 4.5 3.70 - 3.60 - 3.50 IO = -12 mA 0.2 0.2 - 0.15 Low level output VI = VIH or VIL 1.2 0.2 0.2 - 0.15 voltage IO = 100 uA 2.0 0.2 0.2 - 0.15 2.7 0.2 0.2 - 0.15 3.0 0.2 0.2 - 0.15 3.6 0.2 0.2 - 0.15 4.5 0.2 0.2 - 0.15 5.5 VI = VIH or VIL; IO 3.0 - 0.33 0.4 0.5 = 6 mA VI = VIH or VIL; IO 4.5 - 0.40 - 0.55 - 0.65 = 12 mA Input current VI = VCC or 0 V 5.5 - ±0.1 - ±1.0 - ±1.0 Consumption current VI =VCC or 0 V 5.5 8.0 80 160 IO = 0 uA Additional input VI =VCC –0.6 V; 5.5 8.0 80 160 consumption current IO = 0 uA 3 V V V V uA uA uA IN74LV02 AC electrical characteristics (tLH = tHL = 2.5 ns, CL=50 pF, RL = 1 KOhm ,) Value –40 –40 Symb Test Parameter VCC, V 25 °C ol conditions to 85 °C to 125 °C Unit min max min max min max tPHL, Propagation delay Fig.1 1.2 80 85 95 ns tPLH time when 2.0 17 21 26 switching "on", "off" 2.7 12 15 19 3.0 10 12 15 4.5 8 10 13 CI Input capacity 3.0 7 pF CРD Dynamic capacity VI = 0 V 3.0 44 or VCC - Time diagram of input and output pulses A, B tLH tHL 0.9 0.9 VCC VI VI 0.1 tPH 0.1 tPL L H 0.9 GND 0.9 VI B, A 0.1 tTHL VI 0.1 tTLH VI = 0.5VCC Fig.1 4 VCC