HIGH-POWER GaAlAs IR EMITTERS OD-850L FEATURES • High optical output • 850nm peak emission • Hermetically sealed TO-46 package • Medium emission angle for best coverage/power density All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Caps are welded to the case. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS MIN Total Power Output, Po IF = 100mA 25 Spectral Bandwidth at 50%, Δλ TYP MAX UNITS 35 mW 850 nm IF = 20mA 40 nm 35 Deg Forward Voltage, VF IF = 100mA 1.6 Volts Rise Time IFP = 50mA Peak Emission Wavelength, λP Half Intensity Beam Angle, θ Reverse Breakdown Voltage, VR Fall Time IF = 20mA IF = 20mA IR = 10μA 5 30 IFP = 50mA 2 Volts 20 nsec 20 nsec ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation 200mW Continuous Forward Current 100mA Peak Forward Current (10μs, 200Hz)1 300mA Reverse Voltage 5V Lead Soldering Temperature (1/16" from case for 10sec) 1Derate 260°C per Thermal Derating Curve above 25°C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 1Heat 2 -40°C to 100°C 100°C 400°C/W Typical 135°C/W Typical transfer minimized by measuring in still air with minimum heat conducting through leads Air circulating at a rapid rate to keep case temperature at 25°C 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 HIGH-POWER GaAlAs IR EMITTERS 200 OD-850L THERMAL DERATING CURVE POWER DISSIPATION (mW) INFINITE HEAT SINK 160 140 NO HEAT SINK 120 100 80 60 40 20 100 25 50 75 AMBIENT TEMPERATURE (°C) 100 DEGRADATION CURVE RADIATION PATTERN 100 IF = 20mA IF = 50mA IF = 100mA 90 RELATIVE POWER OUTPUT (%) 0 RELATIVE POWER OUTPUT (%) TYPICAL CHARACTERISTICS MAXIMUM RATINGS 180 IF = 100mA (-3σ) 80 70 TCASE = 25°C NO PRE BURN-IN PERFORMED 60 102 103 STRESS TIME, (hrs) 104 60 40 20 0 –50 50 101 80 105 –40 –30 –20 –10 0 10 20 BEAM ANGLE, θ(deg) 30 40 50 POWER OUTPUT vs TEMPERATURE SPECTRAL OUTPUT 1.5 100 RELATIVE POWER OUTPUT RELATIVE POWER OUTPUT (%) 1.4 80 60 40 20 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0 750 POWER OUTPUT, Po (mW) 100 800 850 WAVELENGTH, λ(nm) 900 950 0.5 –50 –25 0 25 50 AMBIENT TEMPERATURE (°C) 75 100 POWER OUTPUT vs FORWARD CURRENT 10 DC 1 10 100 FORWARD CURRENT, IF (mA) 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013