SIMOPAC® Module BSM 191 VDS = 1000 V ID = 28 A R DS(on) = 0.37 Ω ● ● ● ● ● ● Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type Ordering Code BSM 191 C67076-A1009-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 1000 V Drain-gate voltage, RGS = 20 kΩ VDGR 1000 Gate-source voltage VGS ± 20 Continuous drain current, TC = 25 ˚C ID 28 Pulsed drain current, TC = 25 ˚C ID puls 112 Operating and storage temperature range Tj, Tstg – 55 … + 150 ˚C Power dissipation, TC = 25 ˚C Ptot 700 W Thermal resistance Chip-case Rth JC ≤ 0.18 Insulation test voltage2), t = 1 min. Vis 2500 Vac Creepage distance, drain-source – 16 mm Clearance, drain-source – 11 DIN humidity category, DIN 40 040 – F IEC climatic category, DIN IEC 68-1 – 55/150/56 1) 2) A K/W – See chapter Package Outline and Circuit Diagrams. Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 71 03.96 BSM 191 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA V(BR)DSS Gate threshold voltage VGS = VDS, ID = 1 mA VGS(th) Zero gate voltage drain current VDS = 1000 V, VGS = 0 Tj = 25 ˚C Tj = 125 ˚C I DSS Gate-source leakage current VGS = 20 V, VDS = 0 IGSS Drain-source on-state resistance VGS = 10 V, ID = 18 A RDS(on) V 1000 – – 2.1 3.0 4.0 µA – – 50 300 250 1000 – 10 100 nA Ω – 0.33 0.37 Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max., ID = 18 A gfs 15 22 – S Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Ciss – 22 30 nF Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Coss – 1 1.5 Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Crss – 0.48 0.8 Turn-on time ton (ton = td (on) + tr) VCC = 500 V, VGS = 10 V ID = 18 A, RGS = 3.3 Ω td (on) – 60 – tr – 30 – Turn-off time toff (toff = td (off) + tf) VCC = 500 V, VGS = 10 V ID = 18 A, RGS = 3.3 Ω td (off) – 350 – tf – 60 – Semiconductor Group 72 ns BSM 191 Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Reverse diode Continuous reverse drain current TC = 25 ˚C IS Pulsed reverse drain current TC = 25 ˚C ISM Diode forward on-voltage IF = 56 A , VGS = 0 VSD Reverse recovery time IF = IS, diF/dt = 100 A/ µs, VR = 100 V trr Reverse recovery charge IF = IS, diF/dt = 100 A/ µs, VR = 100 V Qrr Semiconductor Group A – – 28 – – 112 – 1.15 1.4 – 2 – V µs µC – 73 30 – BSM 191 Characteristics at Tj = 25 ˚C, unless otherwise specified. Power dissipation Ptot = f (TC) parameter: Tj = 150 ˚C Typ. output characteristics ID = f (VDS) parameter: tp = 80 µs Safe operating area ID = f (VDS) parameter: single pulse, TC = 25 ˚C Tj ≤ 150 ˚C Typ. transfer characteristic ID = f (VGS) parameter: tp = 80 µs , VDS = 25 V Semiconductor Group 74 BSM 191 Typ. drain-source on-state resistance RDS(on) = f (ID) parameter: VGS Drain-source on-state resistance ROS(on) = f (Tj) parameter: ID = 18 A; VGS = 10 V, (spread) Gate threshold voltage VGS(th) = f (Tj) parameter: VDS = VGS , ID = 1 mA Drain current ID = f (TC) parameter: VGS ≥ 10 V, Tj = 150 ˚C Semiconductor Group 75 BSM 191 Typ. capacitances C = f (VDS) parameter: VGS = 0, f =1 MHz (spread) Drain-source breakdown voltage V(BR)DSS (Tj) = b × V(BR)DSS (25 ˚C) Forward characteristics of reverse diode IF = f (VSD) parameter: Tj, tp = 80 µs (spread) Semiconductor Group 76 BSM 191 Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T Typ. gate charge VGS = f (QGate) parameter: IDpuls = 42 A Semiconductor Group 77