Diode Semiconductor Korea GBU4A --- GBU4M VOLTAGE RANGE: 50 --- 1000 V CURRENT: 4.0 A SILICON BRIDGE RECT IFIERS FEATURES GBU Ideal for printed circuit board 22.3± 0.3 Reliable low cos t cons truction utilizing m olded 3.7± 0.35 4 45° Mounting pos ition: Any - AC P. TY 2.2± 0.2 .9 R1 94V-O 1.9± 0.3 Plas tic m aterrial has U/L flam m ability clas s ification + 2.5± 0.2 18.3± 0.5 Glass passivated chip junctions 2.4± 0.2 3.8± 0.2 18.7± 0.2 7.9± 0.2 plas tic technique 1.2± 0.15 5.0± 0.3 0.5± 0.15 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. GBU 4A GBU 4B GBU 4D GBU 4G GBU 4J GBU 4K GBU 4M UNITS Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V R MS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average f orw ard Tc=100 output current @TA =40 (note 1) (note 2) 4.0 IF (AV) A 3.0 Peak f orw ard surge current 8.3ms single half -sine-w ave IF SM 150.0 A VF 1.0 V superimposed on rated load Maximum instantaneous f orw ard voltage at 2.0 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =125 Typical junction capacitance per leg (note 3) Typical thermal resistance per leg Operating junction temperature range Storage temperature range 5.0 IR CJ 100 45 (note 2) RθJA 22.0 (note 1) RθJC 4.2 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 N OTE: 1. Unit case m ounted on 1.6x1.6x0.06" thick (4.0x4.0x0.15cm ) AI. Plate. 2. U nits m ounted on P.C .B. with 0.5x0.5" (12x12m m) copper pads and 0.375" (9.5m m ) lead length. 3. Measured at 1.0 MH z and applied rev erse v oltage of 4.0 v olts. μA 500.0 pF /W www.diode.kr GBU4A --- GBU4M Diode Semiconductor Korea 4 .0 3 .0 2 .0 1 .0 0 0 50 1 00 1 50 TEMPERATURE, FIG.2 -- TYPICAL FORWARD CHARACTERISTIC INSTANTANEOUS FORWARD CURRENT, AMPERES AVERAGE FORWARD CURRENT, AMPERES FIG.1 -- DERATING CURVE FOR OUTPUT RRECTIFIED CURRENT 150 TJ=TJ max. SINGLE SINE-WAVE (JEDEC METHOD) 120 90 60 30 1.0 CYCLE 10 1 100 NUMBER OF CYCLES AT 60Hz TJ=25 f=1.0 MHz VSIG=50mVp-p 100 40 10 .1 50-400V 600-1000V 1 4 10 REVERSE VOLTAGE, VOLTS 100 TJ=25 Pulse Width =300uS 0.1 .01 .4 .6 .8 1 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 500 TJ=125 100 10 1.0 0.1 T J= 2 5 .01 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE, JUNCTION CAPACITANCE, pF FIG.5 -- TYPICAL JUNCTION CAPACITANCE PER LEG 1000 1.0 100 10 /W DURGE CURRENT 10 FIG.4 -- TYPICAL REVERSE CHARACTERISTIC INSTANTANEOUS REVERSE CURRENT, MICRO AMPERES PEAK FORWARD SURGE CURRENT, AMPERES FIG.3 -- MAXIMUM NON-REPETITIVE PEAK FORWARD 100 1 .1 .01 .1 1 10 100 t, HEATING TIME, sec. www.diode.kr