TIGER ELECTRONIC CO.,LTD Product specification IRFZ44N N-Channel Power MOSFET DESCRIPTION Process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) O Parameter l Value Unit VDSS 55 V Drain Current - Continuous ID 49 A Drain Current - Pulsed IDM 160 A VGSS ±20 V Power Dissipation PD 94 W Max. Operating Junction Temperature Tj 150 o -55~150 o Drain-Source Voltage Gate-Source Voltage Storage Temperature Tstg C TO-220 C ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Drain-Source Breakdown Voltage Symbol Test Conditions BVDSS VGS = 0V, ID =250μA Min. Typ. Max. Unit 55 — — V Zero Gate Voltage Drain Current IDSS VDS =55V, VGS =0V — — 10 uA Gate-Body Leakage Current, Forward IGSSF VGS =20V, VDS =0V — — 100 nA Gate-Body Leakage Current, Reverse IGSSR VGS = -20V, VDS =0V — — -100 nA Gate Threshold Voltage VGS(th) VDS = VGS , ID =250μA 2.0 3.0 4.0 V Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 25 A — — 0.0175 W — — 1.3 V Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 25 A