TGS IRFZ44N N-channel power mosfet Datasheet

TIGER ELECTRONIC CO.,LTD
Product specification
IRFZ44N
N-Channel Power MOSFET
DESCRIPTION
Process has specifically been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary switch in advanced
highefficiency, high-frequency isolated DC-DC converters for Telecom and
Computer applications. It is also intended for any applications with low gate
drive requirements.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
O
Parameter
l
Value
Unit
VDSS
55
V
Drain Current - Continuous
ID
49
A
Drain Current - Pulsed
IDM
160
A
VGSS
±20
V
Power Dissipation
PD
94
W
Max. Operating Junction Temperature
Tj
150
o
-55~150
o
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature
Tstg
C
TO-220
C
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Drain-Source Breakdown Voltage
Symbol
Test Conditions
BVDSS VGS = 0V, ID =250μA
Min.
Typ.
Max.
Unit
55
—
—
V
Zero Gate Voltage Drain Current
IDSS
VDS =55V, VGS =0V
—
—
10
uA
Gate-Body Leakage Current, Forward
IGSSF
VGS =20V, VDS =0V
—
—
100
nA
Gate-Body Leakage Current, Reverse
IGSSR
VGS = -20V, VDS =0V
—
—
-100
nA
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID =250μA
2.0
3.0
4.0
V
Static Drain-Source On-Resistance
RDS(on) VGS = 10 V, ID = 25 A
—
—
0.0175
W
—
—
1.3
V
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 25 A
Similar pages