NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBA114EDXV6T1 series, two BRT devices are housed in the SOT−563 package which is ideal for low−power surface mount applications where board space is at a premium. http://onsemi.com (3) (2) R1 Q2 R2 (4) Simplifies Circuit Design Reduces Board Space Reduces Component Count These are Pb−Free Devices 1 Symbol Value Unit VCBO −50 Vdc Collector-Emitter Voltage VCEO −50 Vdc IC −100 mAdc Symbol Max Unit PD 357 2.9 mW mW/°C 350 °C/W THERMAL CHARACTERISTICS Total Device Dissipation @ TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) SOT−563 CASE 463A PLASTIC STYLE 1 xx M G G Collector-Base Voltage Characteristic (One Junction Heated) (6) MARKING DIAGRAM (TA = 25°C unless otherwise noted, common for Q1 and Q2) Collector Current R1 (5) MAXIMUM RATINGS Rating R2 Q1 Features • • • • (1) RqJA xx = Device Code (Refer to page 2) M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NSBA1xxxDXV6T1 Package Shipping † SOT−563* 4000/Tape & Reel NSBA1xxxDXV6T1G SOT−563* 4000/Tape & Reel Characteristic (Both Junctions Heated) Total Device Dissipation @ TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Junction and Storage Temperature Range Symbol Max Unit PD 500 4.0 mW mW/°C RqJA 250 °C/W TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev. 6 1 NSBA1xxxDXV6T5 SOT−563* 8000/Tape & Reel NSBA1xxxDXV6T5G SOT−563* 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **This package is inherently Pb−Free. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: NSBA114EDXV6/D NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES DEVICE MARKING AND RESISTOR VALUES Package Marking R1 (kW) R2 (kW) NSBA114EDXV6T1 / T5 Device* SOT−563 0A 10 10 NSBA124EDXV6T1 / T5 SOT−563 0B 22 22 NSBA144EDXV6T1 / T5 SOT−563 0C 47 47 NSBA114YDXV6T1 / T5 SOT−563 0D 10 47 0E 10 ∞ NSBA114TDXV6T1 / T5 (Note 2) SOT−563 NSBA143TDXV6T1 / T5 (Note 2) SOT−563 0F 4.7 ∞ NSBA113EDXV6T1 / T5 (Note 2) SOT−563 0G 1.0 1.0 NSBA123EDXV6T1 / T5 (Note 2) SOT−563 0H 2.2 2.2 NSBA143EDXV6T1 / T5 (Note 2) SOT−563 0J 4.7 4.7 NSBA143ZDXV6T1 / T5 (Note 2) SOT−563 0K 4.7 47 NSBA124XDXV6T1 / T5 (Note 2) SOT−563 0L 22 47 NSBA123JDXV6T1 / T5 (Note 2) SOT−563 0M 2.2 47 NSBA115EDXV6T1 / T5 (Note 2) SOT−563 0N 100 100 NSBA144WDXV6T1 (Note 2) SOT−563 0P 47 22 *The “G’’ suffix indicates Pb−Free package available. Refer to Ordering Information Table on page 1. 2. New resistor combinations. Updated curves to follow in subsequent data sheets. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = −50 V, IE = 0) ICBO − − −100 nAdc Collector-Emitter Cutoff Current (VCE = −50 V, IB = 0) ICEO − − −500 nAdc Emitter-Base Cutoff Current (VEB = −6.0 V, IC = 0) IEBO − − − − − − − − − − − − − − − − − − − − − − − − − − − − −0.5 −0.2 −0.1 −0.2 −0.9 −1.9 −4.3 −2.3 −1.5 −0.18 −0.13 −0.2 −0.05 −0.13 mAdc Collector-Base Breakdown Voltage (IC = −10 mA, IE = 0) V(BR)CBO −50 − − Vdc Collector-Emitter Breakdown Voltage (Note 3) (IC = −2.0 mA, IB = 0) V(BR)CEO −50 − − Vdc VCE(sat) − − −0.25 Vdc OFF CHARACTERISTICS NSBA114EDXV6T1 NSBA124EDXV6T1 NSBA144EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA113EDXV6T1 NSBA123EDXV6T1 NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1 ON CHARACTERISTICS (Note 3) Collector-Emitter Saturation Voltage (IC = −10 mA, IE = −0.3 mA) (IC = −10 mA, IB = −5 mA) NSBA113EDXV6T1/NSBA123EDXV6T1 (IC = −10 mA, IB = −1 mA) NSBA114TDXV6T1/NSBA143TDXV6T1 NSBA143EDXV6T1/NSBA143ZDXV6T1/NSBA124XDXV6T1 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 2 NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (continued) Characteristic Symbol Min Typ Max Unit hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 250 250 5.0 15 27 140 130 140 130 140 − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 VOH −4.9 − − Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 kW 0.8 0.17 − 0.8 0.055 0.38 0.038 1.7 1.0 0.21 − 1.0 0.1 0.47 0.047 2.1 1.2 0.25 − 1.2 0.185 0.56 0.056 2.6 ON CHARACTERISTICS (Note 3) (continued) DC Current Gain (VCE = −10 V, IC = −5.0 mA) Output Voltage (on) (VCC = −5.0 V, VB = −2.5 V, RL = 1.0 kW) (VCC = −5.0 V, VB = −3.5 V, RL = 1.0 kW) (VCC = −5.0 V, VB = −5.5 V, RL = 1.0 kW) (VCC = −5.0 V, VB = −4.0 V, RL = 1.0 kW) NSBA114EDXV6T1 NSBA124EDXV6T1 NSBA144EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA113EDXV6T1 NSBA123EDXV6T1 NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1 VOL NSBA114EDXV6T1 NSBA124EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA113EDXV6T1 NSBA123EDXV6T1 NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA144EDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1 Output Voltage (off) (VCC = −5.0 V, VB = −0.5 V, RL = 1.0 kW) (VCC = −5.0 V, VB = −0.05 V, RL = 1.0 kW) NSBA113EDXV6T1 (VCC = −5.0 V, VB = − 0.25 V, RL = 1.0 kW) NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA123EDXV6T1 NSBA143ZDXV6T1 Input Resistor NSBA114EDXV6T1 NSBA124EDXV6T1 NSBA144EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA113EDXV6T1 NSBA123EDXV6T1 NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1 Resistor Ratio NSBA114EDXV6T1/NSBA124EDXV6T1/ NSBA144EDXV6T1/NSBA115EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1/NSBA143TDXV6T1 NSBA113EDXV6T1/NSBA123EDXV6T1/NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA144WDXV6T1 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 Vdc R1/R2 NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) ALL NSBA114EDXV6T1 SERIES DEVICES PD, POWER DISSIPATION (mW) 300 250 200 150 100 RqJA = 490°C/W 50 0 −50 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114EDXV6T1 1 IC/IB = 10 TA=−25°C 0.1 25°C 75°C 0.01 20 40 IC, COLLECTOR CURRENT (mA) 0 Figure 1. Derating Curve − ALL DEVICES 50 Figure 2. VCE(sat) versus IC TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114EDXV6T1 4 VCE = 10 V C ob , CAPACITANCE (pF) hFE , DC CURRENT GAIN (NORMALIZED) 1000 TA=75°C 25°C 100 10 −25°C 1 10 IC, COLLECTOR CURRENT (mA) 3 2 1 0 100 f = 1 MHz lE = 0 V TA = 25°C 0 Figure 3. DC Current Gain 100 25°C 75°C TA=−25°C 10 1 0.1 0.01 0.001 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 50 Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) 100 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 8 9 Figure 5. Output Current versus Input Voltage TA=−25°C 10 25°C 75°C 1 0.1 10 VO = 0.2 V 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 4 50 NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS TYPICAL ELECTRICAL CHARACTERISTICS — NSBA124EDXV6T1 IC/IB = 10 1 25°C TA=−25°C 75°C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75°C 1 10 Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 3 2 1 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=−25°C 10 1 0.1 0.01 0.001 50 Figure 9. Output Capacitance 100 25°C 75°C f = 1 MHz lE = 0 V TA = 25°C V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 4 0 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 25°C 75°C 1 0 10 8 9 10 Figure 10. Output Current versus Input Voltage TA=−25°C 0.1 100 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC 0 25°C −25°C 100 10 50 40 1000 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 5 NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES 1 1000 IC/IB = 10 TA=−25°C 25°C 75°C 0.1 0.01 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144EDXV6T1 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C −25°C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 IC, COLLECTOR CURRENT (mA) 0.6 0.4 0.2 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) −25°C 1 0.1 0.01 0.001 50 VO = 5 V 1 0 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 8 9 10 Figure 15. Output Current versus Input Voltage 100 10 25°C TA=75°C 10 Figure 14. Output Capacitance V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 100 f = 1 MHz lE = 0 V TA = 25°C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 16. Input Voltage versus Output Current http://onsemi.com 6 50 NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES 180 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114YDXV6T1 TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25°C 140 −25°C 120 100 80 60 40 20 0 80 TA=75°C VCE = 10 V 160 1 2 4 6 Figure 17. VCE(sat) versus IC 100 TA=75°C 3.5 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 10 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 25°C TA=−25°C 75°C 1 0 10 8 10 Figure 20. Output Current versus Input Voltage 10 0.1 25°C −25°C 1 50 Figure 19. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 80 90 100 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 7 NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114TDXV6T1 HFE, DC CURRENT GAIN (NORMALIZED) 1000 TA = 25°C VCE = 10 V VCE = 5.0 V 100 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 22. DC Current Gain TYPICAL ELECTRICAL CHARACTERISTICS — NSBA143TDXV6T1 HFE, DC CURRENT GAIN (NORMALIZED) 1000 TA = 25°C VCE = 10 V VCE = 5.0 V 100 1.0 10 IC, COLLECTOR CURRENT (mA) Figure 23. DC Current Gain http://onsemi.com 8 100 NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 0.1 75°C 25°C −25°C IC/IB = 10 0.01 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS — NSBA115EDXV6T1 1000 75°C TA = −25°C 100 25°C 10 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) Figure 24. Maximum Collector Voltage versus Collector Current Figure 25. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 1.0 f = 1 MHz IE = 0 V TA = 25°C 0.8 0.6 0.4 0.2 25°C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = −25°C 1 VO = 5 V 0 1 2 3 4 TA = −25°C 10 VO = 0.2 V 75°C 0 2 6 7 8 9 10 Figure 27. Output Current versus Input Voltage 100 1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 26. Output Capacitance 25°C 75°C 10 0.1 0 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.2 0 100 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 Figure 28. Input Voltage versus Output Current http://onsemi.com 9 20 NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144WDXV6T1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = −25°C 75°C 0.1 25°C IC/IB = 10 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 1000 75°C TA = −25°C 100 25°C VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 29. Maximum Collector Voltage versus Collector Current Figure 30. DC Current Gain 100 1.2 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 1.0 0.8 0.6 0.4 0.2 75°C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = −25°C 10 25°C 1 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 VO = 0.2 V 1 TA = −25°C 75°C 25°C 0 6 7 8 9 10 11 Figure 32. Output Current versus Input Voltage 100 10 5 Vin, INPUT VOLTAGE (VOLTS) Figure 31. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.4 0 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 33. Input Voltage versus Output Current http://onsemi.com 10 NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F D −X− 6 5 1 2 A L 4 E −Y− 3 b e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b C D E e L HE HE C 5 PL 6 0.08 (0.003) M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 STYLE 1: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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