INCHANGE Semiconductor Product Specification MBR3045CT Schottky Barrier Rectifier FEATURES ·Dual Rectifier Conduction, Positive Center Tap ·Low Power Loss/High Efficiency ·High Current Capability, Low Forward Voltage Drop ·High Surge Capacity ·Guarding for Overvoltage protection ·For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·High Temperature Soldering Guaranteed: 250℃ Max. for 10 Seconds ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 45 V IF(AV) Average Rectified Forward Current (Per Leg) (Total) 15 30 A IFSM Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 250 A IRRM Peak Repetitive Reverse Surge Current (2μS - 1Khz) 2 A Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ TJ Tstg isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor Product Specification MBR3045CT Schottky Barrier Rectifier THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX UNIT 1.5 ℃/W MAX UNIT 0.66 V 50 uA ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width≤300μs,Duty Cycle≤1%) SYMBOL PARAMETER VF Maximum Instantaneous Forward Voltage IF= 15A ; TC= 25℃ IR Maximum Instantaneous Reverse Current Rated DC Voltage, TC= 25℃ isc website：www.iscsemi.com CONDITIONS 2 isc & iscsemi is registered trademark